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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
STTH30S12W

STTH30S12W

DIODE GEN PURP 1.2KV 30A DO247

STMicroelectronics

7,093 -
STTH30S12W

数据表

- DO-247-2 (Straight Leads) Tube Active Standard 1200 V 2.9 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 15 µA @ 1200 V - 30A - - Through Hole DO-247 175°C (Max)
STTH3010WY

STTH3010WY

DIODE GEN PURP 1KV 30A DO247-2

STMicroelectronics

9,611 -
STTH3010WY

数据表

- DO-247-2 (Straight Leads) Tube Active Standard 1000 V 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 15 µA @ 1000 V - 30A Automotive AEC-Q101 Through Hole - -40°C ~ 175°C
STPSC10H065D

STPSC10H065D

650 V 10 A power Schottky silico

STMicroelectronics

4,606 -
STPSC10H065D

数据表

- TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 480pF @ 0V, 1MHz 10A - - Through Hole TO-220AC -40°C ~ 175°C
STPSC12065G-TR

STPSC12065G-TR

DIODE SIL CARBIDE 650V 12A D2PAK

STMicroelectronics

9,367 -
STPSC12065G-TR

数据表

ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.45 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 650 V 750pF @ 0V, 1MHz 12A - - Surface Mount D2PAK -40°C ~ 175°C
STTH60P03SW

STTH60P03SW

DIODE GEN PURP 300V 60A TO247-3

STMicroelectronics

7 -
STTH60P03SW

数据表

- TO-247-3 Tube Active Standard 300 V 1.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 300 V - 60A - - Through Hole TO-247-3 175°C (Max)
STTH3006DPI

STTH3006DPI

DIODE GEN PURP 600V 30A DOP3I

STMicroelectronics

3,576 -
STTH3006DPI

数据表

- DOP3I-2 Insulated (Straight Leads) Tube Active Standard 600 V 3.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 40 µA @ 600 V - 30A - - Through Hole DOP3I 150°C (Max)
STPSC20065W

STPSC20065W

DIODE SIL CARBIDE 650V 20A DO247

STMicroelectronics

9,781 -
STPSC20065W

数据表

ECOPACK®2 DO-247-2 (Straight Leads) Tube Active SiC (Silicon Carbide) Schottky 650 V 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 650 V 1250pF @ 0V, 1MHz 20A - - Through Hole DO-247 -40°C ~ 175°C
STPS2150A

STPS2150A

DIODE SCHOTTKY 150V 2A SMA

STMicroelectronics

78,488 -
STPS2150A

数据表

- DO-214AC, SMA Tape & Reel (TR) Active Schottky 150 V 820 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 µA @ 150 V - 2A - - Surface Mount DO-214AC (SMA) 175°C (Max)
STTH102A

STTH102A

DIODE GEN PURP 200V 1A SMA

STMicroelectronics

45,290 -
STTH102A

数据表

- DO-214AC, SMA Tape & Reel (TR) Active Standard 200 V 970 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 1 µA @ 200 V - 1A - - Surface Mount DO-214AC (SMA) 175°C (Max)
STPS340U

STPS340U

DIODE SCHOTTKY 40V 3A SMB

STMicroelectronics

34,658 -
STPS340U

数据表

- DO-214AA, SMB Tape & Reel (TR) Active Schottky 40 V 630 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 20 µA @ 40 V - 3A - - Surface Mount SMB 150°C (Max)
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