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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
AU3PGHM3_A/H

AU3PGHM3_A/H

DIODE AVALANCHE 400V 1.7A TO277A

Vishay General Semiconductor - Diodes Division

7,797 -
AU3PGHM3_A/H

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 400 V 1.9 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 400 V 72pF @ 4V, 1MHz 1.7A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AU3PGHM3_A/I

AU3PGHM3_A/I

DIODE AVALANCHE 400V 1.7A TO277A

Vishay General Semiconductor - Diodes Division

6,162 -
AU3PGHM3_A/I

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 400 V 1.9 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 400 V 72pF @ 4V, 1MHz 1.7A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AU3PJHM3_A/H

AU3PJHM3_A/H

DIODE AVALANCHE 600V 1.7A TO277A

Vishay General Semiconductor - Diodes Division

5,422 -
AU3PJHM3_A/H

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 600 V 1.9 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 600 V 72pF @ 4V, 1MHz 1.7A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AU3PJHM3_A/I

AU3PJHM3_A/I

DIODE AVALANCHE 600V 1.7A TO277A

Vishay General Semiconductor - Diodes Division

6,625 -
AU3PJHM3_A/I

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 600 V 1.9 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 600 V 72pF @ 4V, 1MHz 1.7A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AU3PKHM3_A/H

AU3PKHM3_A/H

DIODE AVALANCHE 800V 1.4A TO277A

Vishay General Semiconductor - Diodes Division

6,859 -
AU3PKHM3_A/H

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 800 V 2.5 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 800 V 42pF @ 4V, 1MHz 1.4A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AU3PKHM3_A/I

AU3PKHM3_A/I

DIODE AVALANCHE 800V 1.4A TO277A

Vishay General Semiconductor - Diodes Division

4,422 -
AU3PKHM3_A/I

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 800 V 2.5 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 800 V 42pF @ 4V, 1MHz 1.4A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AU3PMHM3_A/H

AU3PMHM3_A/H

DIODE AVALANCHE 1KV 1.4A TO277A

Vishay General Semiconductor - Diodes Division

7,533 -
AU3PMHM3_A/H

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 1000 V 2.5 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 1000 V 42pF @ 4V, 1MHz 1.4A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AU3PMHM3_A/I

AU3PMHM3_A/I

DIODE AVALANCHE 1KV 1.4A TO277A

Vishay General Semiconductor - Diodes Division

6,398 -
AU3PMHM3_A/I

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 1000 V 2.5 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 1000 V 42pF @ 4V, 1MHz 1.4A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
WNSC2D04650Q

WNSC2D04650Q

DIODE SIL CARB 650V 4A TO220AC

WeEn Semiconductors

7,392 -
WNSC2D04650Q

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 125pF @ 1V, 1MHz 4A - - Through Hole TO-220AC 175°C
SE12DLJHM3/I

SE12DLJHM3/I

DIODE GEN PURP 600V 3.7A TO263AC

Vishay General Semiconductor - Diodes Division

7,769 -
SE12DLJHM3/I

数据表

- TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Standard 600 V 1 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 5 µA @ 600 V 96pF @ 4V, 1MHz 3.7A Automotive AEC-Q101 Surface Mount TO-263AC (SMPD) -55°C ~ 175°C
VBT2080S-M3/8W

VBT2080S-M3/8W

DIODE SCHOTTKY 80V 20A TO263AB

Vishay General Semiconductor - Diodes Division

6,666 -
VBT2080S-M3/8W

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 80 V 920 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 700 µA @ 80 V - 20A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
VBT2080S-M3/4W

VBT2080S-M3/4W

DIODE SCHOTTKY 80V 20A TO263AB

Vishay General Semiconductor - Diodes Division

8,024 -
VBT2080S-M3/4W

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Schottky 80 V 920 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 700 µA @ 80 V - 20A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SDT5H100LP5-13

SDT5H100LP5-13

DIODE SCHOTTKY 100V 5A POWERDI 5

Diodes Incorporated

4,702 -
SDT5H100LP5-13

数据表

- PowerDI™ 5 Tape & Reel (TR) Active Schottky 100 V 660 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 3.5 µA @ 100 V - 5A - - Surface Mount PowerDI™ 5 -55°C ~ 150°C
ES3DV

ES3DV

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation

3,000 -
ES3DV

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 200 V - Fast Recovery =< 500ns, > 200mA (Io) 20 ns 10 µA @ 200 V 45pF @ 4V, 1MHz 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
ESH3D

ESH3D

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation

3,000 -
ESH3D

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 200 V - Fast Recovery =< 500ns, > 200mA (Io) 20 ns 5 µA @ 200 V 45pF @ 4V, 1MHz 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 175°C
MUR310S

MUR310S

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

3,000 -
MUR310S

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 100 V - Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 100 V - 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 175°C
MUR315S

MUR315S

DIODE GEN PURP 150V 3A DO214AB

Taiwan Semiconductor Corporation

3,000 -
MUR315S

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 150 V - Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 150 V - 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 175°C
VS-8TQ080STRL-M3

VS-8TQ080STRL-M3

DIODE SCHOTTKY 80V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2,123 -
VS-8TQ080STRL-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 80 V 720 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 550 µA @ 80 V 500pF @ 5V, 1MHz 8A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-10TQ045STRR-M3

VS-10TQ045STRR-M3

DIODE SCHOTTKY 45V 10A TO263AB

Vishay General Semiconductor - Diodes Division

8,543 -
VS-10TQ045STRR-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 45 V 570 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 45 V 900pF @ 5V, 1MHz 10A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
FES8HT-E3/45

FES8HT-E3/45

DIODE GEN PURP 500V 8A TO220AC

Vishay General Semiconductor - Diodes Division

2,347 -
FES8HT-E3/45

数据表

- TO-220-2 Tube Active Standard 500 V 1.5 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 500 V - 8A - - Through Hole TO-220AC -55°C ~ 150°C
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