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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SS210L RUG

SS210L RUG

DIODE SCHOTTKY 100V 2A SUB SMA

Taiwan Semiconductor Corporation

6,967 -
SS210L RUG

数据表

- DO-219AB Tape & Reel (TR) Active Schottky 100 V 850 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - 2A - - Surface Mount Sub SMA -55°C ~ 150°C
C3D03065E

C3D03065E

DIODE SIL CARB 650V 11A TO252-2

Wolfspeed, Inc.

2,356 -
C3D03065E

数据表

Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.8 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 155pF @ 0V, 1MHz 11A - - Surface Mount TO-252-2 -55°C ~ 175°C
BYR5D-1200PJ

BYR5D-1200PJ

DIODE GEN PURP 1.2KV 5A DPAK

WeEn Semiconductors

6,289 -
BYR5D-1200PJ

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1200 V 2.2 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 62 ns 50 µA @ 1200 V - 5A - - Surface Mount DPAK 175°C (Max)
SF62G

SF62G

DIODE GEN PURP 100V 6A DO201AD

Taiwan Semiconductor Corporation

8,546 -
SF62G

数据表

- DO-201AD, Axial Tape & Reel (TR) Active Standard 100 V 975 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 100 V 100pF @ 4V, 1MHz 6A - - Through Hole DO-201AD -55°C ~ 150°C
S4D05120A

S4D05120A

DIODE SIL CARB 1.2KV 5A TO220AC

SMC Diode Solutions

853 -
S4D05120A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 302pF @ 0V, 1MHz 5A - - Through Hole TO-220AC (TO-220-2) -55°C ~ 175°C
RB068L-60DDTE25

RB068L-60DDTE25

DIODE SCHOTTKY 60V 2A PMDS

Rohm Semiconductor

5,863 -
RB068L-60DDTE25

数据表

- DO-214AC, SMA Tape & Reel (TR) Active Schottky 60 V 700 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 2 µA @ 60 V - 2A - - Surface Mount PMDS 150°C (Max)
MURS340HE3/9AT

MURS340HE3/9AT

DIODE GEN PURP 400V 3A DO214AB

Vishay General Semiconductor - Diodes Division

9,676 -
MURS340HE3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 400 V 1.28 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 400 V - 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -65°C ~ 175°C
STTH12T06DI

STTH12T06DI

DIODE GP 600V 12A TO220AC INS

STMicroelectronics

548 -
STTH12T06DI

数据表

- TO-220-2 Insulated, TO-220AC Tube Active Standard 600 V 2.95 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 20 µA @ 600 V - 12A - - Through Hole TO-220AC ins -40°C ~ 175°C
MURS360HE3/9AT

MURS360HE3/9AT

DIODE GEN PURP 600V 3A DO214AB

Vishay General Semiconductor - Diodes Division

4,793 -
MURS360HE3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 600 V 1.28 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 600 V - 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -65°C ~ 175°C
VS-E5TX2112S2LHM3

VS-E5TX2112S2LHM3

20A, 1200V, "X" SERIES GEN 5 FRE

Vishay General Semiconductor - Diodes Division

835 -
VS-E5TX2112S2LHM3

数据表

FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 3.6 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 50 µA @ 1200 V - 20A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
MURS360HE3_A/I

MURS360HE3_A/I

DIODE GEN PURP 600V 3A DO214AB

Vishay General Semiconductor - Diodes Division

8,938 -
MURS360HE3_A/I

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 600 V 1.28 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 600 V - 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -65°C ~ 175°C
IDP08E65D2XKSA1

IDP08E65D2XKSA1

DIODE GEN PURP 650V 8A TO220-2

Infineon Technologies

2 -
IDP08E65D2XKSA1

数据表

- TO-220-2 Bulk Active Standard 650 V 2.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 40 µA @ 650 V - 8A - - Through Hole TO-220-2 -40°C ~ 175°C
HS5AH

HS5AH

50NS, 5A, 50V, HIGH EFFICIENT RE

Taiwan Semiconductor Corporation

4,312 -
HS5AH

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 50 V 1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V 80pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
HS5BH

HS5BH

50NS, 5A, 100V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

8,747 -
HS5BH

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 100 V 1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 80pF @ 4V, 1MHz 5A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
STTH30RQ06DY

STTH30RQ06DY

DIODE GEN PURP 600V 30A TO220AC

STMicroelectronics

998 -
STTH30RQ06DY

数据表

- TO-220-2 Tube Active Standard 600 V 2.95 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 40 µA @ 600 V - 30A Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
SK1840D

SK1840D

DIODE SCHOTTKY 40V 18A D2PAK

SMC Diode Solutions

4,797 -
SK1840D

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 40 V 500 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - 18A - - Surface Mount D2PAK -55°C ~ 150°C
DMA10P1200UZ-TRL

DMA10P1200UZ-TRL

DIODE GEN PURP 1.2KV 10A TO252AA

IXYS

1,673 -
DMA10P1200UZ-TRL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1200 V 1.55 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1200 V 1pF @ 400V, 1MHz 10A - - Surface Mount TO-252AA -55°C ~ 175°C
VS-E4PH6006LHN3

VS-E4PH6006LHN3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

456 -
VS-E4PH6006LHN3

数据表

FRED Pt® TO-247-2 Tube Active Standard 600 V 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 68 ns 50 µA @ 600 V - 60A Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
VS-3C08ET07T-M3

VS-3C08ET07T-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

1,934 -
VS-3C08ET07T-M3

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 45 µA @ 650 V 340pF @ 1V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 175°C
VS-E5TX3012S2L-M3

VS-E5TX3012S2L-M3

DIODE GEN PURP 1.2KV 30A TO263AB

Vishay General Semiconductor - Diodes Division

1,540 -
VS-E5TX3012S2L-M3

数据表

FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 3.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 1200 V - 30A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
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