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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SUR1060DIODE GEN PURP 600V TO220AC SMC Diode Solutions |
6,614 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | Standard | 600 V | 2.2 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 600 V | - | - | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |
|
SDURD1530DIODE GEN PURP 300V 15A DPAK SMC Diode Solutions |
8,961 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 300 V | 1.26 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 10 µA @ 300 V | - | 15A | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
|
S4D04120ADIODE SIL CARB 1.2KV 4A TO220AC SMC Diode Solutions |
547 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 302pF @ 0V, 1MHz | 4A | - | - | Through Hole | TO-220AC (TO-220-2) | -55°C ~ 175°C |
|
SDUR6030WDIODE GEN PURP 300V 60A TO247AC SMC Diode Solutions |
4,362 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 300 V | 1.4 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 10 µA @ 300 V | - | 60A | - | - | Through Hole | TO-247AC | -55°C ~ 150°C |
|
|
S4D05120EDIODE SIL CARBIDE 1.2KV 5A DPAK SMC Diode Solutions |
2,432 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 302pF @ 0V, 1MHz | 5A | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
6A05GDIODE GEN PURP 50V 6A R-6 SMC Diode Solutions |
7,950 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Obsolete | Standard | 50 V | 950 mV @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | 150pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -65°C ~ 175°C |
|
|
6A1GDIODE GEN PURP 100V 6A R-6 SMC Diode Solutions |
6,107 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Obsolete | Standard | 100 V | 950 mV @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | 150pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -65°C ~ 175°C |
|
|
6A2GDIODE GEN PURP 200V 6A R-6 SMC Diode Solutions |
4,684 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Obsolete | Standard | 200 V | 950 mV @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | 150pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -65°C ~ 175°C |
|
|
6A8GDIODE GEN PURP 800V 6A R-6 SMC Diode Solutions |
3,100 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Obsolete | Standard | 800 V | 950 mV @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 150pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -65°C ~ 175°C |
|
|
S4D08120EDIODE SIL CARBIDE 1.2KV 8A DPAK SMC Diode Solutions |
2,606 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 1200 V | 560pF @ 0V, 1MHz | 8A | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
