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制造商	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
Adafruit Industries LLC Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Broadcom Limited Bruckewell Central Semiconductor Corp CODIXX AG Comchip Technology Diodes Incorporated Diotec Semiconductor DNmicron EIC SEMICONDUCTOR INC. EVVO Fairchild Semiconductor fastSiC Flip Electronics Formosa Microsemi Co., Ltd. GeneSiC Semiconductor Global Power Technology-GPT Good-Ark Semiconductor Harris Corporation Honeywell Sensing and Productivity Solutions HV Components Associates HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS JATTA KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Lumimax Optoelectronic Technology Luminus Devices Inc. MACOM Technology Solutions MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NovuSem NTE Electronics, Inc NXP Semiconductors onsemi Panasonic - BSG Panasonic Electronic Components - Semiconductor Products Panjit International Inc. Phoenix Contact PN Junction Semiconductor Power Integrations Powerex Inc. Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo Semikron SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. SMC Diode Solutions Souriau-Sunbank by Eaton SparkFun Electronics STMicroelectronics SURGE Taiwan Semiconductor Corporation TE Connectivity Aerospace, Defense and Marine Torex Semiconductor Ltd Toshiba Semiconductor and Storage Varo Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division Vishay Siliconix WeEn Semiconductors Wolfspeed, Inc. YAGEO

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
18TQ045S DIODE SCHOTTKY 35V 18A D2PAK SMC Diode Solutions	686	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	35 V	600 mV @ 18 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.5 mA @ 45 V	1400pF @ 5V, 1MHz	18A	-	-	Surface Mount	D2PAK	-55°C ~ 150°C
VS-8ETX06FP-N3 DIODE GP 600V 8A TO220-2FP Vishay General Semiconductor - Diodes Division	1,430	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	17 ns	50 µA @ 600 V	-	8A	-	-	Through Hole	TO-220-2 Full Pack	-65°C ~ 175°C
V10P20-M3/86A DIODE SCHOTTKY 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division	4,667	-	询价单	数据表	eSMP®, TMBS®	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	200 V	1.34 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 200 V	-	2.4A	-	-	Surface Mount	TO-277A (SMPC)	-40°C ~ 150°C
GP30M-E3/73 DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division	1,970	-	询价单	数据表	SUPERECTIFIER®	DO-201AD, Axial	Cut Tape (CT)	Active	Standard	1000 V	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	5 µA @ 1000 V	-	3A	-	-	Through Hole	DO-201AD	-65°C ~ 175°C
CLH01(TE16L,Q) DIODE GEN PURP 200V 3A L-FLAT Toshiba Semiconductor and Storage	7,568	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Standard	200 V	980 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	3A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH03(TE16L,Q) DIODE GEN PURP 400V 3A L-FLAT Toshiba Semiconductor and Storage	7,801	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Standard	400 V	-	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	-	-	3A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-
CLH05(T6L,NKOD,Q) DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage	6,300	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Standard	200 V	980 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	5A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH05(TE16R,Q) DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage	6,098	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Standard	200 V	980 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	5A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH05,LMBJQ(O DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage	9,589	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Standard	200 V	980 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	5A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH06(TE16L,Q) DIODE GEN PURP 300V 5A L-FLAT Toshiba Semiconductor and Storage	3,653	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Standard	300 V	-	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	-	-	5A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-
CLH07(TE16L,NMB,Q) DIODE GEN PURP 400V 5A L-FLAT Toshiba Semiconductor and Storage	3,498	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Standard	400 V	1.8 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	-	5A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH07(TE16R,Q) DIODE GEN PURP 400V 5A L-FLAT Toshiba Semiconductor and Storage	4,531	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Standard	400 V	1.8 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	-	5A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLS01(T6LSONY,Q) DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage	2,161	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Schottky	30 V	470 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	530pF @ 10V, 1MHz	10A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS01(TE16L,PAS,Q) DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage	3,213	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Schottky	30 V	470 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	530pF @ 10V, 1MHz	10A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS01(TE16R,Q) DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage	7,583	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Schottky	30 V	470 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	530pF @ 10V, 1MHz	10A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS01,LFJFQ(O DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage	2,274	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Schottky	30 V	470 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	530pF @ 10V, 1MHz	10A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS02(T6L,CANO-O,Q DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage	2,625	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Schottky	40 V	550 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	420pF @ 10V, 1MHz	10A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS02(T6L,CLAR,Q) DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage	4,300	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Schottky	40 V	550 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	420pF @ 10V, 1MHz	10A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS02(TE16L,HIT,Q) DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage	3,628	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Schottky	40 V	550 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	420pF @ 10V, 1MHz	10A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS02(TE16L,SQC,Q) DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage	3,240	-	询价单	数据表	-	L-FLAT™	Bulk	Obsolete	Schottky	40 V	550 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	420pF @ 10V, 1MHz	10A	-	-	Surface Mount	L-FLAT™ (4x5.5)	-40°C ~ 125°C

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