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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N4005-N-0-4-AP

1N4005-N-0-4-AP

DIODE GEN PURP 600V 1A DO41

Micro Commercial Co

7,005 -
1N4005-N-0-4-AP

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -55°C ~ 150°C
1N4005-N-2-1-BP

1N4005-N-2-1-BP

DIODE GEN PURP 600V 1A DO41

Micro Commercial Co

9,671 -
1N4005-N-2-1-BP

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -55°C ~ 150°C
1N4005-N-2-2-BP

1N4005-N-2-2-BP

DIODE GEN PURP 600V 1A DO41

Micro Commercial Co

9,340 -
1N4005-N-2-2-BP

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -55°C ~ 150°C
1N4005-N-2-3-AP

1N4005-N-2-3-AP

DIODE GEN PURP 600V 1A DO41

Micro Commercial Co

7,690 -
1N4005-N-2-3-AP

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -55°C ~ 150°C
1N4005-N-2-4-AP

1N4005-N-2-4-AP

DIODE GEN PURP 600V 1A DO41

Micro Commercial Co

8,428 -
1N4005-N-2-4-AP

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -55°C ~ 150°C
TUAU8K

TUAU8K

80NS, 8A, 800V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

9,084 -
TUAU8K

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 800 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 5 µA @ 800 V 43pF @ 4V, 1MHz 8A - - Surface Mount TO-277A (SMPC4.6U) -55°C ~ 150°C
TUAU6M

TUAU6M

75NS, 6A, 1000V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

9,376 -
TUAU6M

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 1000 V 1.7 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 1000 V 43pF @ 4V, 1MHz 6A - - Surface Mount TO-277A (SMPC4.6U) -55°C ~ 150°C
TUAU10K

TUAU10K

80NS, 10A, 800V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

9,630 -
TUAU10K

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 800 V 1.9 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 5 µA @ 800 V 43pF @ 4V, 1MHz 10A - - Surface Mount TO-277A (SMPC4.6U) -55°C ~ 150°C
TUAU6K

TUAU6K

75NS, 6A, 800V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

2,022 -
TUAU6K

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 800 V 1.7 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 800 V 43pF @ 4V, 1MHz 6A - - Surface Mount TO-277A (SMPC4.6U) -55°C ~ 150°C
TUAU8M

TUAU8M

80NS, 8A, 1000V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

3,221 -
TUAU8M

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 1000 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 5 µA @ 1000 V 43pF @ 4V, 1MHz 8A - - Surface Mount TO-277A (SMPC4.6U) -55°C ~ 150°C
RB058RSM15STFTL1

RB058RSM15STFTL1

150V 3A, TO-277GE, ULTRA LOW IR

Rohm Semiconductor

3,995 -
RB058RSM15STFTL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 150 V 830 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2.1 µA @ 150 V - 3A Automotive AEC-Q101 Surface Mount TO-277A 175°C
TUAU10M

TUAU10M

80NS, 10A, 1000V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

8,038 -
TUAU10M

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 1000 V 1.9 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 5 µA @ 1000 V 43pF @ 4V, 1MHz 10A - - Surface Mount TO-277A (SMPC4.6U) -55°C ~ 150°C
1N4006-N-0-1-BP

1N4006-N-0-1-BP

DIODE GEN PURP 800V 1A DO41

Micro Commercial Co

9,070 -
1N4006-N-0-1-BP

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 800 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -55°C ~ 150°C
1N4006-N-0-2-BP

1N4006-N-0-2-BP

DIODE GEN PURP 800V 1A DO41

Micro Commercial Co

2,067 -
1N4006-N-0-2-BP

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 800 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -55°C ~ 150°C
S5W

S5W

DIODE GEN PURP 1600V 8A SMC

Diotec Semiconductor

4,526 -
S5W

数据表

- DO-214AB, SMC Bulk Active Standard 1600 V 1.1 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1600 V - 8A - - Surface Mount DO-214AB (SMC) -50°C ~ 150°C
SS3H9HE3_B/I

SS3H9HE3_B/I

DIODE SCHOTTKY 90V 3A DO214AB

Vishay General Semiconductor - Diodes Division

4,520 -
SS3H9HE3_B/I

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Schottky 90 V 800 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 20 µA @ 90 V - 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -65°C ~ 175°C
1N4006-N-0-3-AP

1N4006-N-0-3-AP

DIODE GEN PURP 800V 1A DO41

Micro Commercial Co

5,124 -
1N4006-N-0-3-AP

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 800 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -55°C ~ 150°C
ES3D-AQ

ES3D-AQ

DIODE GEN PURP 200V 3A SMC

Diotec Semiconductor

7,021 -
ES3D-AQ

数据表

- DO-214AB, SMC Bulk Active Standard 200 V 900 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 200 V - 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -50°C ~ 150°C
1N4006-N-0-4-AP

1N4006-N-0-4-AP

DIODE GEN PURP 800V 1A DO41

Micro Commercial Co

9,420 -
1N4006-N-0-4-AP

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 800 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -55°C ~ 150°C
1N4006-N-2-1-BP

1N4006-N-2-1-BP

DIODE GEN PURP 800V 1A DO41

Micro Commercial Co

5,728 -
1N4006-N-2-1-BP

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 800 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -55°C ~ 150°C
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