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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SD103AW-G3-18

SD103AW-G3-18

DIODE SCHOTTKY 40V 350MA SOD123

Vishay General Semiconductor - Diodes Division

4,556 -
SD103AW-G3-18

数据表

- SOD-123 Tape & Reel (TR) Active Schottky 40 V 600 mV @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 10 ns 5 µA @ 30 V 50pF @ 0V, 1MHz 350mA - - Surface Mount SOD-123 -55°C ~ 125°C
FESE16GT-E3/45

FESE16GT-E3/45

DIODE GEN PURP 400V 16A TO220AC

Vishay General Semiconductor - Diodes Division

3,809 -
FESE16GT-E3/45

数据表

- TO-220-2 Tube Obsolete Standard 400 V 1.3 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 175pF @ 4V, 1MHz 16A - - Through Hole TO-220AC -65°C ~ 150°C
FESE8FT-E3/45

FESE8FT-E3/45

DIODE GEN PURP 300V 8A TO220AC

Vishay General Semiconductor - Diodes Division

8,564 -
FESE8FT-E3/45

数据表

- TO-220-2 Tube Obsolete Standard 300 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 85pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
S2D-E3/52T

S2D-E3/52T

DIODE GEN PURP 200V 1.5A DO214AA

Vishay General Semiconductor - Diodes Division

3,601 -
S2D-E3/52T

数据表

- DO-214AA, SMB Tape & Reel (TR) Active Standard 200 V 1.15 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V 16pF @ 4V, 1MHz 1.5A - - Surface Mount DO-214AA (SMB) -55°C ~ 150°C
M3045S-M3/4W

M3045S-M3/4W

DIODE SCHOTTKY 45V 30A TO220-3

Vishay General Semiconductor - Diodes Division

5,395 -
M3045S-M3/4W

数据表

- TO-220-3 Tube Obsolete Schottky 45 V 700 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 45 V 980pF @ 4V, 1MHz 30A - - Through Hole TO-220-3 -65°C ~ 150°C
MB3035S-E3/4W

MB3035S-E3/4W

DIODE SCHOTTKY 35V 30A TO263AB

Vishay General Semiconductor - Diodes Division

7,281 -
MB3035S-E3/4W

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Schottky 35 V 700 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 35 V 980pF @ 4V, 1MHz 30A - - Surface Mount TO-263AB (D2PAK) -65°C ~ 150°C
MBRB10H35-E3/45

MBRB10H35-E3/45

DIODE SCHOTTKY 35V 10A TO263AB

Vishay General Semiconductor - Diodes Division

2,223 -
MBRB10H35-E3/45

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Schottky 35 V 850 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 35 V - 10A - - Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
1N4002GP-M3/54

1N4002GP-M3/54

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3,271 -
1N4002GP-M3/54

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Standard 100 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
1N4003GPHM3/54

1N4003GPHM3/54

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,688 -
1N4003GPHM3/54

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
MBR1045MFST3G

MBR1045MFST3G

DIODE SCHOTTKY 45V 10A 5DFN

onsemi

2,626 -
MBR1045MFST3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 45 V 750 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 45 V - 10A - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 150°C
MBR1240MFST3G

MBR1240MFST3G

DIODE SCHOTTKY 40V 12A 5DFN

onsemi

4,069 -
MBR1240MFST3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete Schottky 40 V 680 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - 12A - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 150°C
MBR30H100MFST1G

MBR30H100MFST1G

DIODE SCHOTTKY 100V 30A 5DFN

onsemi

2,466 -
MBR30H100MFST1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete Schottky 100 V 900 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - 30A - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 150°C
MBR460MFST3G

MBR460MFST3G

DIODE SCHOTTKY 60V 4A 5DFN

onsemi

6,122 -
MBR460MFST3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete Schottky 60 V 740 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 60 V - 4A - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 175°C
S1PD-M3/84A

S1PD-M3/84A

DIODE GEN PURP 200V 1A DO220AA

Vishay General Semiconductor - Diodes Division

2,904 -
S1PD-M3/84A

数据表

eSMP® DO-220AA Tape & Reel (TR) Active Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.8 µs 1 µA @ 200 V 6pF @ 4V, 1MHz 1A - - Surface Mount DO-220AA (SMP) -55°C ~ 150°C
MBR5100MFST3G

MBR5100MFST3G

DIODE SCHOTTKY 100V 5A 5DFN

onsemi

5,213 -
MBR5100MFST3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete Schottky 100 V 980 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 100 V - 5A - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 175°C
1N4003-E3/53

1N4003-E3/53

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

26,698 -
1N4003-E3/53

数据表

- DO-204AL, DO-41, Axial Cut Tape (CT) Active Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
MBR830MFST3G

MBR830MFST3G

DIODE SCHOTTKY 30V 8A 5DFN

onsemi

5,701 -
MBR830MFST3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 30 V 700 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 30 V - 8A - - Surface Mount 5-DFN (5x6) (8-SOFL) -40°C ~ 150°C
MBR860MFST1G

MBR860MFST1G

DIODE SCHOTTKY 60V 8A 5DFN

onsemi

2,865 -
MBR860MFST1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete Schottky 60 V 800 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 60 V - 8A - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 175°C
SD103AWS-G3-08

SD103AWS-G3-08

DIODE SCHOTTKY 40V 350MA SOD323

Vishay General Semiconductor - Diodes Division

19,169 -
SD103AWS-G3-08

数据表

- SC-76, SOD-323 Tape & Reel (TR) Active Schottky 40 V 600 mV @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 10 ns 5 µA @ 30 V 50pF @ 0V, 1MHz 350mA - - Surface Mount SOD-323 -55°C ~ 150°C
NHPJ15S600G

NHPJ15S600G

DIODE GP 600V 15A TO220-2FP

onsemi

3,225 -
NHPJ15S600G

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 3.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 60 µA @ 600 V - 15A - - Through Hole TO-220-2 Full Pack -55°C ~ 150°C
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