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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
VF20100S-E3/4W

VF20100S-E3/4W

DIODE SCHOTTKY 100V 20A ITO220AB

Vishay General Semiconductor - Diodes Division

104 -
VF20100S-E3/4W

数据表

TMBS® TO-220-3 Full Pack, Isolated Tab Tube Active Schottky 100 V 900 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V - 20A - - Through Hole ITO-220AB -40°C ~ 150°C
VS-E5TX3006-M3

VS-E5TX3006-M3

DIODE GEN PURP 600V 30A TO220AC

Vishay General Semiconductor - Diodes Division

16,161 -
VS-E5TX3006-M3

数据表

FRED Pt® TO-220-2 Tube Active Standard 600 V 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 41 ns 20 µA @ 600 V - 30A - - Through Hole TO-220AC -55°C ~ 175°C
VBT3045BP-E3/8W

VBT3045BP-E3/8W

DIODE SCHOTTKY 45V 30A TO263AB

Vishay General Semiconductor - Diodes Division

7,523 -
VBT3045BP-E3/8W

数据表

TMBS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 45 V 700 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 45 V - 30A - - Surface Mount TO-263AB (D2PAK) 200°C (Max)
VS-15ETH06-M3

VS-15ETH06-M3

DIODE GEN PURP 600V 15A TO220AC

Vishay General Semiconductor - Diodes Division

7,513 -
VS-15ETH06-M3

数据表

FRED Pt® TO-220-2 Tube Active Standard 600 V 2.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 29 ns 50 µA @ 600 V - 15A - - Through Hole TO-220AC -65°C ~ 175°C
MBR1660-E3/45

MBR1660-E3/45

DIODE SCHOTTKY 60V 16A TO220-3

Vishay General Semiconductor - Diodes Division

1,595 -
MBR1660-E3/45

数据表

- TO-220-3 Tube Active Schottky 60 V 750 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V - 16A - - Through Hole TO-220-3 -65°C ~ 150°C
DNA30EM2200PC

DNA30EM2200PC

DIODE GEN PURP 2.2KV 30A TO263AA

IXYS

4,350 -
DNA30EM2200PC

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 2200 V 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz 30A - - Surface Mount TO-263AA -55°C ~ 175°C
VT3080S-E3/4W

VT3080S-E3/4W

DIODE SCHOTTKY 80V 30A TO220-3

Vishay General Semiconductor - Diodes Division

7,284 -
VT3080S-E3/4W

数据表

TMBS® TO-220-3 Tube Active Schottky 80 V 950 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 80 V - 30A - - Through Hole TO-220-3 -55°C ~ 150°C
CMR3U-06M TR13 PBFREE

CMR3U-06M TR13 PBFREE

DIODE GEN PURP 600V 3A SMC

Central Semiconductor Corp

4,400 -
CMR3U-06M TR13 PBFREE

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Standard 600 V 1.4 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 5 µA @ 600 V - 3A - - Surface Mount SMC -65°C ~ 175°C
TRS6E65C,S1AQ

TRS6E65C,S1AQ

DIODE SIL CARB 650V 6A TO220-2L

Toshiba Semiconductor and Storage

5,245 -
TRS6E65C,S1AQ

数据表

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 35pF @ 650V, 1MHz 6A - - Through Hole TO-220-2L 175°C (Max)
APT15DQ60BG

APT15DQ60BG

DIODE GP 600V 15A TO247

Microchip Technology

300 -
APT15DQ60BG

数据表

- TO-247-3 Tube Active Standard 600 V 2.4 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 19 ns 25 µA @ 600 V - 15A - - Through Hole TO-247 [B] -55°C ~ 175°C
TRS12E65C,S1Q

TRS12E65C,S1Q

DIODE SIL CARB 650V 12A TO220-2L

Toshiba Semiconductor and Storage

3,177 -
TRS12E65C,S1Q

数据表

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 170 V 65pF @ 650V, 1MHz 12A - - Through Hole TO-220-2L 175°C (Max)
20TQ045

20TQ045

DIODE SCHOTTKY 45V TO220AC

SMC Diode Solutions

8,944 -
20TQ045

数据表

- TO-220-3 Tube Active Schottky 45 V 570 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 2.7 mA @ 45 V 1400pF @ 5V, 1MHz - - - Through Hole TO-220AC -55°C ~ 150°C
VS-16EDU06-M3/I

VS-16EDU06-M3/I

DIODE GEN PURP 600V 16A TO263AC

Vishay General Semiconductor - Diodes Division

8,565 -
VS-16EDU06-M3/I

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Standard 600 V 1.25 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 100 µA @ 600 V 16pF @ 600V 16A - - Surface Mount TO-263AC (SMPD) -55°C ~ 175°C
FES16BT-E3/45

FES16BT-E3/45

DIODE GEN PURP 100V 16A TO220AC

Vishay General Semiconductor - Diodes Division

867 -
FES16BT-E3/45

数据表

- TO-220-2 Tube Active Standard 100 V 975 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 100 V - 16A - - Through Hole TO-220AC -65°C ~ 150°C
VBT5202-M3/8W

VBT5202-M3/8W

DIODE SCHOTTKY 200V 5A TO263AB

Vishay General Semiconductor - Diodes Division

8,072 -
VBT5202-M3/8W

数据表

TMBS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 200 V 880 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 200 V - 5A - - Surface Mount TO-263AB (D2PAK) -40°C ~ 175°C
LQA08TC600

LQA08TC600

DIODE GEN PURP 600V 8A TO220AC

Power Integrations

3,865 -
LQA08TC600

数据表

Qspeed™ TO-220-2 Tube Last Time Buy Standard 600 V 3.05 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 15 ns 25 µA @ 600 V 33pF @ 10V, 1MHz 8A - - Through Hole TO-220AC 150°C (Max)
MBRF10H100-E3/45

MBRF10H100-E3/45

DIODE SCHOTTKY 100V 10A ITO220AC

Vishay General Semiconductor - Diodes Division

335 -
MBRF10H100-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Schottky 100 V 770 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 4.5 µA @ 100 V - 10A - - Through Hole ITO-220AC -65°C ~ 175°C
NRVB2045EMFST1G

NRVB2045EMFST1G

DIODE SCHOTTKY 45V 20A 5DFN

onsemi

1,167 -
NRVB2045EMFST1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 45 V 640 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 400 µA @ 45 V - 20A - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 150°C
RFN20NS4SFHTL

RFN20NS4SFHTL

DIODE GEN PURP 430V 20A LPDS

Rohm Semiconductor

967 -
RFN20NS4SFHTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 430 V 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 430 V 268pF @ 0V, 1MHz 20A Automotive AEC-Q101 Surface Mount LPDS 150°C (Max)
VS-18TQ045-M3

VS-18TQ045-M3

DIODE SCHOTTKY 45V 18A TO220AC

Vishay General Semiconductor - Diodes Division

7,512 -
VS-18TQ045-M3

数据表

- TO-220-2 Tube Active Schottky 45 V 720 mV @ 36 A Fast Recovery =< 500ns, > 200mA (Io) - 2.5 mA @ 45 V 1400pF @ 5V, 1MHz 18A - - Through Hole TO-220AC -55°C ~ 175°C
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