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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UJ3D06510TSDIODE SIL CARB 650V 10A TO220-2 Qorvo |
11,657 | - |
|
数据表 |
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 327pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
UJ3D1205TSDIODE SIL CARB 1.2KV 5A TO220-2 Qorvo |
27,393 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 1200 V | 250pF @ 1V, 1MHz | 5A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
UJ3D06520TSDIODE SIL CARB 650V 20A TO220-2 Qorvo |
6,004 | - |
|
数据表 |
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 654pF @ 1V, 1MHz | 20A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UJ3D1220KSDDIODE SIL CARB 1.2KV 10A TO247-3 Qorvo |
1,188 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 1200 V | 1020pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
UJ3D06504TSDIODE SIL CARB 650V 4A TO220-2 Qorvo |
22,764 | - |
|
数据表 |
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 118pF @ 1V, 1MHz | 4A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
UJ3D06508TSDIODE SIL CARB 650V 8A TO220-2 Qorvo |
28,148 | - |
|
数据表 |
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 250pF @ 1V, 1MHz | 8A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
UJ3D06512TSDIODE SIL CARB 650V 12A TO220-2 Qorvo |
10,601 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 392pF @ 1V, 1MHz | 12A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
UJ3D06516TSDIODE SIL CARB 650V 16A TO220-2 Qorvo |
938 | - |
|
数据表 |
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 500pF @ 1V, 1MHz | 16A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UJ3D1210K2DIODE SIL CARB 1.2KV 10A TO247-2 Qorvo |
7,101 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 510pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
UJ3D06530TSDIODE SIL CARB 650V 30A TO220-2 Qorvo |
7,715 | - |
|
数据表 |
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 370 µA @ 650 V | 990pF @ 1V, 1MHz | 30A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
