onsemi|单个二极管 - 页 263

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
SS12T3G DIODE SCHOTTKY 20V 1A SMA onsemi	4,725	-	询价单	数据表	-	DO-214AC, SMA	Tape & Reel (TR)	Obsolete	Schottky	20 V	470 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	45 µA @ 20 V	-	1A	-	-	Surface Mount	SMA	-55°C ~ 150°C
ISL9R1560P2-F085 DIODE GEN PURP 600V 15A TO220-2 onsemi	633	-	询价单	数据表	Stealth™	TO-220-2	Tube	Active	Avalanche	600 V	2.2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	100 µA @ 600 V	-	15A	Automotive	AEC-Q101	Through Hole	TO-220-2	-55°C ~ 175°C
FFSD0665B DIODE SIL CARB 650V 9.1A DPAK onsemi	854	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	9.1A	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
FFSD0665B-F085 DIODE SIL CARB 650V 9.1A DPAK onsemi	1,948	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	9.1A	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
M1MA141KT1 DIODE GEN PURP 40V 100MA SC70-3 onsemi	2,391	-	询价单	数据表	-	SC-70, SOT-323	Tape & Reel (TR)	Obsolete	Standard	40 V	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 ns	100 nA @ 35 V	2pF @ 0V, 1MHz	100mA	-	-	Surface Mount	SC-70-3 (SOT323)	150°C (Max)
BAT54-D87Z DIODE SCHOTTKY 30V 200MA SOT23-3 onsemi	9,964	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	Schottky	30 V	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	200mA	-	-	Surface Mount	SOT-23-3	-55°C ~ 150°C
RURG3060-F085 DIODE GEN PURP 600V 30A TO247-2 onsemi	194	-	询价单	数据表	-	TO-247-2	Tube	Active	Avalanche	600 V	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	250 µA @ 600 V	-	30A	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
FFSP2065B-F085 DIODE SIL CARB 650V 20A TO220-2 onsemi	660	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	20A	Automotive	AEC-Q101	Through Hole	TO-220-2	-55°C ~ 175°C
FFSD2065B DIODE SIL CARB 650V 23.4A DPAK onsemi	1,771	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	23.4A	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
FFSP10120A DIODE SIL CARB 1.2KV 10A TO220L onsemi	689	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.75 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	612pF @ 1V, 100kHz	10A	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C

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