Nexperia USA Inc.|单个二极管 - 页 16

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
PNU650300AEJ-QJ PNU650300AEJ-Q/SOT8018/TO263-2 Nexperia USA Inc.	778	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), Variant	Tape & Reel (TR)	Active	Standard	650 V	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	5 µA @ 650 V	13pF @ 400V, 1MHz	30A	Automotive	AEC-Q101	Surface Mount	D2PAK R2P	175°C
PMEG045T150EPDAZ DIODE SCHOTTKY 45V 15A CFP15 Nexperia USA Inc.	3,593	-	询价单	数据表	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	45 V	550 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	100 µA @ 45 V	800pF @ 10V, 1MHz	15A	Automotive	AEC-Q101	Surface Mount	CFP15	175°C (Max)
BUK7Y12-100LX BUK7Y12-100L/SOT669/LFPAK Nexperia USA Inc.	4,386	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
PSC1065HJ DIODE SIL CARB 650V 10A TO252 Nexperia USA Inc.	2,065	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	36pF @ 400V, 1MHz	10A	-	-	Surface Mount	TO-252-2	175°C
PSC0665KQ SIC DIODES AND FETS Nexperia USA Inc.	1,000	-	询价单	数据表	-	TO-220-2	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	225pF @ 1V, 1MHz	6A	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
PSC1065KQ PSC1065K/SOT8021/TO220-2L Nexperia USA Inc.	974	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	340pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220-2	175°C
PSC1665JJ SIC DIODES AND FETS Nexperia USA Inc.	800	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), Variant	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	475pF @ 1V, 1MHz	16A	-	-	Surface Mount	D2PAK R2P	-55°C ~ 175°C
PSC1665LQ SIC DIODES AND FETS Nexperia USA Inc.	450	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	475pF @ 1V, 1MHz	16A	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
BAS116GW DIODE GEN PURP 75V 215MA SOD123 Nexperia USA Inc.	15,000	-	询价单	数据表	-	SOD-123	Bulk	Active	Standard	75 V	1.25 V @ 150 mA	Standard Recovery >500ns, > 200mA (Io)	3 µs	5 nA @ 75 V	2pF @ 0V, 1MHz	215mA	Automotive	AEC-Q101	Surface Mount	SOD-123	150°C (Max)
PMEG2010AEB,115 PMEG2010AEB - 20 V, 1 A LOW VF M Nexperia USA Inc.	1,719,347	-	询价单	数据表	-	SC-79, SOD-523	Bulk	Active	Schottky	20 V	620 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 20 V	25pF @ 1V, 1MHz	1A	-	-	Surface Mount	SOD-523	150°C (Max)

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