| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SICU0460B-TPDIODE SIL CARBIDE 650V 4A DPAK Micro Commercial Co |
2,413 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 4 A | No Recovery Time > 500mA (Io) | - | 15 µA @ 650 V | 200pF @ 0V, 1MHz | 4A | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
MUR6060B-BPDIODE GEN PURP 600V 60A TO247AD Micro Commercial Co |
512 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 600 V | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 15 µA @ 600 V | - | 60A | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
MUR60120BS-BPDIODE GEN PURP 1.2KV 60A TO247AD Micro Commercial Co |
1,225 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 3.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 5 µA @ 1200 V | 170pF @ 4V, 1MHz | 60A | - | - | Through Hole | TO-247AD | -55°C ~ 150°C |
|
SIC1060P-BPDIODE SIL CARB 650V 10A TO220AC Micro Commercial Co |
4,898 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 44 µA @ 650 V | 36pF @ 400V, 1MHz | 10A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
SICPT10120Y-BPSCHOTTKY DIODES Micro Commercial Co |
2,134 | - |
|
数据表 |
- | TO-247-2 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.54 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 13 µA @ 1200 V | 700pF @ 0V, 1MHz | 10A | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
SIC05120B-BPDIODE SIL CARB 1.2KV 5A TO220AC Micro Commercial Co |
4,895 | - |
|
数据表 |
- | TO-220-2 | Tube | Last Time Buy | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | - | 3 µA @ 1200 V | 353pF @ 0V, 1MHz | 5A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
SICB20120Y-TPDIODE GEN PURP 1.2KV 20A D2PAK Micro Commercial Co |
1,540 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | 1552pF @ 0V, 1MHz | 20A | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
|
SICB2060Y-TPSCHOTTKY DIODES Micro Commercial Co |
7,941 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 1157pF @ 0V, 1MHz | 20A | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
|
SIC2060Y-BPSCHOTTKY DIODES Micro Commercial Co |
3,538 | - |
|
数据表 |
- | TO-220-2 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 1157pF @ 0V, 1MHz | 20A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
SIC20120Y-BPSIC SBD,TO-220AC Micro Commercial Co |
4,348 | - |
|
数据表 |
- | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | 1552pF @ 0V, 1MHz | 61A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |