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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
MBR10150-BP

MBR10150-BP

Interface

Micro Commercial Co

9,880 -
MBR10150-BP

数据表

- TO-220-2 Bulk Active Standard 150 V - Standard Recovery >500ns, > 200mA (Io) - 500 µA @ 150 V - 10A - - Through Hole TO-220AC 150°C
MBR10100-BP

MBR10100-BP

Interface

Micro Commercial Co

3,633 -
MBR10100-BP

数据表

- TO-220-2 Bulk Active Schottky 100 V - Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 100 V 400pF @ 4V, 1MHz 10A - - Through Hole TO-220AC -55°C ~ 150°C
FMN-1056S

FMN-1056S

DIODE GEN PURP 600V 5A TO220F-2L

Sanken Electric USA Inc.

2,527 -
FMN-1056S

数据表

- TO-220-2 Full Pack Tube Obsolete Standard 600 V 1.3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 600 V - 5A - - Through Hole TO-220F-2L -40°C ~ 150°C
RU 4

RU 4

DIODE GEN PURP 400V 1.5A AXIAL

Sanken Electric USA Inc.

7,736 -
RU 4

数据表

- Axial Bulk Obsolete Standard 400 V 1.5 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 10 µA @ 400 V - 1.5A - - Through Hole - -40°C ~ 150°C
RU 4B

RU 4B

DIODE GEN PURP 800V 1.5A AXIAL

Sanken Electric USA Inc.

5,101 -
RU 4B

数据表

- Axial Bulk Obsolete Standard 800 V 1.5 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 10 µA @ 800 V - 1.5A - - Through Hole - -40°C ~ 150°C
MBR7100

MBR7100

7.5A, 100V, PLANAR SCHOTTKY

Taiwan Semiconductor Corporation

8,295 -
MBR7100

数据表

- TO-220-2 Tube Active Schottky 100 V 920 mV @ 7.5 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - 7.5A - - Through Hole TO-220AC -55°C ~ 150°C
MBR790

MBR790

7.5A, 90V, PLANAR SCHOTTKY

Taiwan Semiconductor Corporation

8,174 -
MBR790

数据表

- TO-220-2 Tube Active Schottky 90 V 920 mV @ 7.5 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 90 V - 7.5A - - Through Hole TO-220AC -55°C ~ 150°C
VFT1080S-M3/4W

VFT1080S-M3/4W

DIODE SCHOTTKY 80V 10A ITO220AB

Vishay General Semiconductor - Diodes Division

5,984 -
VFT1080S-M3/4W

数据表

TMBS® TO-220-3 Full Pack, Isolated Tab Tube Active Schottky 80 V 810 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 600 µA @ 80 V - 10A - - Through Hole ITO-220AB -55°C ~ 150°C
VS-10WT10FNTR

VS-10WT10FNTR

DIODE SCHOTTKY 100V 10A DPAK

Vishay General Semiconductor - Diodes Division

3,397 -
VS-10WT10FNTR

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete Schottky 100 V 810 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 100 V 400pF @ 5V, 1MHz 10A - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
MURS1060L-BP

MURS1060L-BP

Interface

Micro Commercial Co

5,036 -
MURS1060L-BP

数据表

- TO-220-2 Bulk Active Standard 600 V 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 600 V 115pF @ 4V, 1MHz 10A - - Through Hole TO-220AC -55°C ~ 150°C
BYM36D-TAP

BYM36D-TAP

DIODE AVALANCHE 800V 2.9A SOD64

Vishay General Semiconductor - Diodes Division

4,987 -
BYM36D-TAP

数据表

- SOD-64, Axial Tape & Box (TB) Active Avalanche 800 V 1.78 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 800 V - 2.9A - - Through Hole SOD-64 -55°C ~ 175°C
BYT56J-TAP

BYT56J-TAP

DIODE AVALANCHE 600V 3A SOD64

Vishay General Semiconductor - Diodes Division

7,828 -
BYT56J-TAP

数据表

- SOD-64, Axial Tape & Box (TB) Active Avalanche 600 V 1.4 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 5 µA @ 600 V - 3A - - Through Hole SOD-64 -55°C ~ 175°C
BYT77-TAP

BYT77-TAP

DIODE AVALANCHE 800V 3A SOD64

Vishay General Semiconductor - Diodes Division

6,180 -
BYT77-TAP

数据表

- SOD-64, Axial Tape & Box (TB) Active Avalanche 800 V 1.2 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 800 V - 3A - - Through Hole SOD-64 -55°C ~ 175°C
BYW73-TAP

BYW73-TAP

DIODE AVALANCHE 300V 3A SOD64

Vishay General Semiconductor - Diodes Division

5,419 -
BYW73-TAP

数据表

- SOD-64, Axial Tape & Box (TB) Active Avalanche 300 V 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 300 V - 3A - - Through Hole SOD-64 -55°C ~ 175°C
BYT56J-TR

BYT56J-TR

DIODE AVALANCHE 600V 3A SOD64

Vishay General Semiconductor - Diodes Division

6,552 -
BYT56J-TR

数据表

- SOD-64, Axial Tape & Reel (TR) Active Avalanche 600 V 1.4 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 5 µA @ 600 V - 3A - - Through Hole SOD-64 -55°C ~ 175°C
BYT77-TR

BYT77-TR

DIODE AVALANCHE 800V 3A SOD64

Vishay General Semiconductor - Diodes Division

6,504 -
BYT77-TR

数据表

- SOD-64, Axial Tape & Reel (TR) Active Avalanche 800 V 1.2 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 800 V - 3A - - Through Hole SOD-64 -55°C ~ 175°C
BYW73-TR

BYW73-TR

DIODE AVALANCHE 300V 3A SOD64

Vishay General Semiconductor - Diodes Division

2,867 -
BYW73-TR

数据表

- SOD-64, Axial Tape & Reel (TR) Active Avalanche 300 V 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 300 V - 3A - - Through Hole SOD-64 -55°C ~ 175°C
BYW83-TR

BYW83-TR

DIODE AVALANCHE 400V 3A SOD64

Vishay General Semiconductor - Diodes Division

8,822 -
BYW83-TR

数据表

- SOD-64, Axial Tape & Reel (TR) Active Avalanche 400 V 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 7.5 µs 1 µA @ 400 V 60pF @ 4V, 1MHz 3A - - Through Hole SOD-64 -55°C ~ 175°C
SR1045-AP

SR1045-AP

Interface

Micro Commercial Co

9,511 -
SR1045-AP

数据表

- R-6, Axial Bulk Obsolete Schottky 45 V 550 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 45 V 450pF @ 4V, 1MHz 10A - - Through Hole R-6 -55°C ~ 150°C
P2000B

P2000B

DIODE GEN PURP 100V 20A P600

Diotec Semiconductor

3,089 -
P2000B

数据表

- P600, Axial Bulk Active Standard 100 V 1.1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 100 V - 20A - - Through Hole P-600 -50°C ~ 150°C
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