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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
IR2106

IR2106

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR2106

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR2108

IR2108

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR2108

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR2110

IR2110

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

0 -
IR2110

数据表

- 14-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 14-DIP 6V, 9.5V 2A, 2A Independent Non-Inverting 500 V Through Hole 25ns, 17ns - -40°C ~ 150°C (TJ) -
IR2112

IR2112

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies

0 -
IR2112

数据表

- 14-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-DIP 6V, 9.5V 250mA, 500mA Independent Non-Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
IR2113

IR2113

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

0 -
IR2113

数据表

- 14-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 14-DIP 6V, 9.5V 2A, 2A Independent Non-Inverting 600 V Through Hole 25ns, 17ns - -40°C ~ 150°C (TJ) -
IR2117

IR2117

IC GATE DRVR HIGH-SIDE 8DIP

Infineon Technologies

0 -
IR2117

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side 1 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 6V, 9.5V 250mA, 500mA Single Non-Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
IR2125

IR2125

IC GATE DRVR HIGH-SIDE 8DIP

Infineon Technologies

0 -
IR2125

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side 1 IGBT, N-Channel MOSFET 0V ~ 18V 8-PDIP 0.8V, 2.2V 1.6A, 3.3A Single Non-Inverting 500 V Through Hole 43ns, 26ns - -40°C ~ 150°C (TJ) -
IR2127

IR2127

IC GATE DRVR HI/LOW SIDE 8DIP

Infineon Technologies

0 -
IR2127

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side or Low-Side 1 IGBT, N-Channel MOSFET 12V ~ 20V 8-PDIP 0.8V, 3V 250mA, 500mA Single Non-Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
IR2130

IR2130

IC GATE DRVR HALF-BRIDGE 28DIP

Infineon Technologies

0 -
IR2130

数据表

- 28-DIP (0.600", 15.24mm) Tube Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 28-PDIP 0.8V, 2.2V 250mA, 500mA 3-Phase Inverting 600 V Through Hole 80ns, 35ns - -40°C ~ 150°C (TJ) -
IR2133J

IR2133J

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies

0 -
IR2133J

数据表

- 44-LCC (J-Lead), 32 Leads Tube Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 44-PLCC, 32 Leads (16.58x16.58) 0.8V, 2.2V 250mA, 500mA 3-Phase Inverting 600 V Surface Mount 90ns, 40ns - 125°C (TJ) -
IR2153

IR2153

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR2153

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 10V ~ 15.6V 8-PDIP - - Synchronous RC Input Circuit 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
IR2233J

IR2233J

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies

0 -
IR2233J

数据表

- 44-LCC (J-Lead), 32 Leads Tube Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 44-PLCC, 32 Leads (16.58x16.58) 0.8V, 2V 250mA, 500mA 3-Phase Inverting 1200 V Surface Mount 90ns, 40ns - 125°C (TJ) -
TPIC46L03DB

TPIC46L03DB

IC GATE DRVR LOW-SIDE 28SSOP

Texas Instruments

0 -
TPIC46L03DB

数据表

- 28-SSOP (0.209", 5.30mm Width) Tube Obsolete Not Verified Low-Side 6 N-Channel MOSFET 4.5V ~ 5.5V 28-SSOP - 1.2mA, 1.2mA Independent Non-Inverting - Surface Mount 3.5µs, 3µs - -40°C ~ 150°C (TJ) -
IR2101S

IR2101S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
IR2101S

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 3V 210mA, 360mA Independent Non-Inverting 600 V Surface Mount 100ns, 50ns - -40°C ~ 150°C (TJ) -
IR2102

IR2102

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR2102

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 3V 210mA, 360mA Independent Inverting 600 V Through Hole 100ns, 50ns - -40°C ~ 150°C (TJ) -
IR2102S

IR2102S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
IR2102S

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 3V 210mA, 360mA Independent Inverting 600 V Surface Mount 100ns, 50ns - -40°C ~ 150°C (TJ) -
IR2103

IR2103

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR2103

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 3V 210mA, 360mA Independent Inverting, Non-Inverting 600 V Through Hole 100ns, 50ns - -40°C ~ 150°C (TJ) -
IR2103S

IR2103S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
IR2103S

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 3V 210mA, 360mA Independent Inverting, Non-Inverting 600 V Surface Mount 100ns, 50ns - -40°C ~ 150°C (TJ) -
IR2104STR

IR2104STR

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
IR2104STR

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 3V 210mA, 360mA Synchronous Non-Inverting 600 V Surface Mount 100ns, 50ns - -40°C ~ 150°C (TJ) -
IR2106S

IR2106S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
IR2106S

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Surface Mount 150ns, 50ns - -40°C ~ 150°C (TJ) -
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