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制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
L6385ED

L6385ED

IC GATE DRVR HALF-BRIDGE 8SO

STMicroelectronics

2,076 -
L6385ED

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 17V (Max) 8-SOIC 1.5V, 3.6V 400mA, 650mA Independent Inverting 600 V Surface Mount 50ns, 30ns - -40°C ~ 150°C (TJ) -
L6387ED

L6387ED

IC GATE DRVR HALF-BRIDGE 8SO

STMicroelectronics

1,975 -
L6387ED

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 17V (Max) 8-SOIC 1.5V, 3.6V 400mA, 650mA Independent Inverting 600 V Surface Mount 50ns, 30ns - -45°C ~ 125°C (TJ) -
L6388ED

L6388ED

IC GATE DRVR HALF-BRIDGE 8SO

STMicroelectronics

1,681 -
L6388ED

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 17V (Max) 8-SOIC 1.1V, 1.8V 400mA, 650mA Independent Non-Inverting 600 V Surface Mount 70ns, 40ns - -40°C ~ 150°C (TJ) -
L6386ED

L6386ED

IC GATE DRVR HALF-BRIDGE 14SO

STMicroelectronics

1,301 -
L6386ED

数据表

- 14-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 17V (Max) 14-SO 1.5V, 3.6V 400mA, 650mA Independent Inverting 600 V Surface Mount 50ns, 30ns - -40°C ~ 150°C (TJ) -
L6390D

L6390D

IC GATE DRVR HALF-BRIDGE 16SO

STMicroelectronics

621 -
L6390D

数据表

- 16-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 12.5V ~ 20V 16-SO 1.1V, 1.9V 290mA, 430mA Independent Non-Inverting 600 V Surface Mount 75ns, 35ns - -40°C ~ 150°C (TJ) -
L6491D

L6491D

IC GATE DRVR HALF-BRIDGE 14SO

STMicroelectronics

977 -
L6491D

数据表

- 14-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-SO 1.45V, 2V 4A, 4A Independent Non-Inverting 600 V Surface Mount 15ns, 15ns - -40°C ~ 125°C (TJ) -
L6491DTR

L6491DTR

IC GATE DRVR HALF-BRIDGE 14SO

STMicroelectronics

4,286 -
L6491DTR

数据表

- 14-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active Not Verified Half-Bridge - IGBT, N-Channel MOSFET 10V ~ 20V 14-SO 1.45V, 2V 4A, 4A Independent Non-Inverting 600 V Surface Mount 15ns, 15ns - -40°C ~ 125°C (TJ) -
TD350ETR

TD350ETR

IC GATE DRVR HIGH-SIDE 14SO

STMicroelectronics

6,154 -
TD350ETR

数据表

- 14-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active Not Verified High-Side 1 IGBT, N-Channel MOSFET 12V ~ 26V 14-SO 0.8V, 4.2V 1.5A, 2.3A Single Non-Inverting - Surface Mount 130ns, 75ns (Max) - -40°C ~ 150°C (TJ) -
TD350E

TD350E

IC GATE DRVR HIGH-SIDE 14SO

STMicroelectronics

742 -
TD350E

数据表

- 14-SOIC (0.154", 3.90mm Width) Tube Active Not Verified High-Side 1 IGBT, N-Channel MOSFET 12V ~ 26V 14-SO 0.8V, 4.2V 1.5A, 2.3A Single Non-Inverting - Surface Mount 130ns, 75ns (Max) - -40°C ~ 150°C (TJ) -
TD351IDT

TD351IDT

IC GATE DRVR HIGH-SIDE 8SO

STMicroelectronics

5,343 -
TD351IDT

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active Not Verified High-Side 1 IGBT, N-Channel MOSFET 12V ~ 26V 8-SOIC 0.8V, 4.2V 1.3A, 1.7A Single Non-Inverting - Surface Mount 100ns, 100ns (Max) - -40°C ~ 150°C (TJ) -
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