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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
ISL2111ARTZ

ISL2111ARTZ

IC GATE DRVR HALF-BRIDGE 10TDFN

Renesas Electronics Corporation

1,844 -
ISL2111ARTZ

数据表

- 10-WDFN Exposed Pad Tray Active Not Verified Half-Bridge 2 N-Channel MOSFET 8V ~ 14V 10-TDFN (4x4) 1.4V, 2.2V 3A, 4A Independent Non-Inverting 114 V Surface Mount 9ns, 7.5ns - -40°C ~ 125°C (TJ) -
EL7104CSZ

EL7104CSZ

IC GATE DRVR LOW-SIDE 8SOIC

Renesas Electronics Corporation

2,596 -
EL7104CSZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Low-Side 1 N-Channel, P-Channel MOSFET 4.5V ~ 16V 8-SOIC 0.8V, 2.4V 4A, 4A Single Non-Inverting - Surface Mount 7.5ns, 10ns - -40°C ~ 125°C (TJ) -
EL7212CNZ

EL7212CNZ

IC GATE DRVR LOW-SIDE 8DIP

Renesas Electronics Corporation

7,279 -
EL7212CNZ

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 2 N-Channel, P-Channel MOSFET 4.5V ~ 15V 8-PDIP 0.8V, 2.4V 2A, 2A Independent Inverting - Through Hole 7.5ns, 10ns - -40°C ~ 125°C (TJ) -
ISL89412IBZ

ISL89412IBZ

IC GATE DRVR LOW-SIDE 8SOIC

Renesas Electronics Corporation

1,205 -
ISL89412IBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active Not Verified Low-Side 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-SOIC 0.8V, 2.4V 2A, 2A Independent Inverting, Non-Inverting - Surface Mount 7.5ns, 10ns - -40°C ~ 125°C (TJ) -
ISL89163FRTAZ

ISL89163FRTAZ

IC GATE DRVR LOW-SIDE 8TDFN

Renesas Electronics Corporation

460 -
ISL89163FRTAZ

数据表

- 8-WDFN Exposed Pad Tube Active Not Verified Low-Side 2 N-Channel MOSFET 4.5V ~ 16V 8-TDFN (3x3) 1.22V, 2.08V 6A, 6A Independent Non-Inverting - Surface Mount 20ns, 20ns - -40°C ~ 125°C (TJ) -
ISL89164FBEAZ

ISL89164FBEAZ

IC GATE DRVR LOW-SIDE 8SOIC

Renesas Electronics Corporation

1,645 -
ISL89164FBEAZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Exposed Pad Tube Active Not Verified Low-Side 2 N-Channel MOSFET 4.5V ~ 16V 8-SOIC-EP 1.22V, 2.08V 6A, 6A Independent Inverting - Surface Mount 20ns, 20ns - -40°C ~ 125°C (TJ) -
ISL89165FBEBZ

ISL89165FBEBZ

IC GATE DRVR LOW-SIDE 8SOIC

Renesas Electronics Corporation

756 -
ISL89165FBEBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Exposed Pad Tube Active Not Verified Low-Side 2 N-Channel MOSFET 4.5V ~ 16V 8-SOIC-EP 1.85V, 3.15V 6A, 6A Independent Inverting, Non-Inverting - Surface Mount 20ns, 20ns - -40°C ~ 125°C (TJ) -
ISL89163FBEAZ

ISL89163FBEAZ

IC GATE DRVR LOW-SIDE 8SOIC

Renesas Electronics Corporation

708 -
ISL89163FBEAZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Exposed Pad Tube Active Not Verified Low-Side 2 N-Channel MOSFET 4.5V ~ 16V 8-SOIC-EP 1.22V, 2.08V 6A, 6A Independent Non-Inverting - Surface Mount 20ns, 20ns - -40°C ~ 125°C (TJ) -
ISL89163FBEBZ

ISL89163FBEBZ

IC GATE DRVR LOW-SIDE 8SOIC

Renesas Electronics Corporation

160 -
ISL89163FBEBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Exposed Pad Tube Active Not Verified Low-Side 2 N-Channel MOSFET 4.5V ~ 16V 8-SOIC-EP 1.85V, 3.15V 6A, 6A Independent Non-Inverting - Surface Mount 20ns, 20ns - -40°C ~ 125°C (TJ) -
ISL89164FBEBZ

ISL89164FBEBZ

IC GATE DRVR LOW-SIDE 8SOIC

Renesas Electronics Corporation

952 -
ISL89164FBEBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Exposed Pad Tube Active Not Verified Low-Side 2 N-Channel MOSFET 4.5V ~ 16V 8-SOIC-EP 1.85V, 3.15V 6A, 6A Independent Inverting - Surface Mount 20ns, 20ns - -40°C ~ 125°C (TJ) -
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