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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
R2J20604NP#G3

R2J20604NP#G3

HALF BRIDGE BASED MOSFET DRIVER

Renesas Electronics Corporation

92,500 -
R2J20604NP#G3

数据表

* - Bulk Active Not Verified - - - - - - - - - - - - - - -
R2J20604NP#13

R2J20604NP#13

HALF BRIDGE BASED MOSFET DRIVER

Renesas Electronics Corporation

109 -
R2J20604NP#13

数据表

* - Bulk Active Not Verified - - - - - - - - - - - - - - -
EL7156CSZ-T7A

EL7156CSZ-T7A

IC GATE DRVR HI/LOW SIDE 8SOIC

Renesas Electronics Corporation

233 -
EL7156CSZ-T7A

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete Not Verified High-Side or Low-Side 1 IGBT 4.5V ~ 16.5V 8-SOIC 0.8V, 2.4V 3.5A, 3.5A Single Non-Inverting - Surface Mount 14.5ns, 15ns - -40°C ~ 125°C (TJ) -
R2J20605ANP#G3

R2J20605ANP#G3

HALF BRIDGE BASED MOSFET DRIVER

Renesas Electronics Corporation

2,500 -
R2J20605ANP#G3

数据表

* - Bulk Active Not Verified - - - - - - - - - - - - - - -
R2J20608NP#G2

R2J20608NP#G2

HALF BRIDGE BASED MOSFET DRIVER

Renesas Electronics Corporation

2,491 -
R2J20608NP#G2

数据表

* - Bulk Active Not Verified - - - - - - - - - - - - - - -
ISL6613AEIBZ-T

ISL6613AEIBZ-T

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

4,458 -
ISL6613AEIBZ-T

数据表

- 8-SOIC (0.154", 3.90mm Width) Exposed Pad Tape & Reel (TR) Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 10.8V ~ 13.2V 8-SOIC-EP - 1.25A, 2A Synchronous Non-Inverting 36 V Surface Mount 26ns, 18ns - -40°C ~ 125°C (TJ) -
EL7242CSZ

EL7242CSZ

IC GATE DRVR LOW-SIDE 8SOIC

Renesas Electronics Corporation

13 -
EL7242CSZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Low-Side 2 N-Channel, P-Channel MOSFET 4.5V ~ 16V 8-SOIC 0.8V, 2.4V 2A, 2A Independent Inverting, Non-Inverting - Surface Mount 10ns, 10ns - -40°C ~ 125°C (TJ) -
ISL6700IBZ

ISL6700IBZ

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
ISL6700IBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 15V 8-SOIC 0.8V, 2.2V 1.4A, 1.3A Independent Non-Inverting 80 V Surface Mount 5ns, 5ns - -40°C ~ 125°C (TJ) -
ISL89410IBZ

ISL89410IBZ

IC GATE DRVR LOW-SIDE 8SOIC

Renesas Electronics Corporation

92 -
ISL89410IBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Low-Side 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-SOIC 0.8V, 2.4V 2A, 2A Independent Non-Inverting - Surface Mount 7.5ns, 10ns - -40°C ~ 125°C (TJ) -
ISL2110ABZ

ISL2110ABZ

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
ISL2110ABZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Half-Bridge 2 N-Channel MOSFET 8V ~ 14V 8-SOIC 3.7V, 7.4V 3A, 4A Independent Non-Inverting 114 V Surface Mount 9ns, 7.5ns - -40°C ~ 125°C (TJ) -
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