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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
MCP14E3-E/P

MCP14E3-E/P

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

275 -
MCP14E3-E/P

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-PDIP 0.8V, 2.4V 4A, 4A Independent Inverting - Through Hole 15ns, 18ns - -40°C ~ 150°C (TJ) -
MIC4452VM

MIC4452VM

IC GATE DRVR LOW-SIDE 8SOIC

Microchip Technology

401 -
MIC4452VM

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Low-Side 1 IGBT, N-Channel MOSFET 4.5V ~ 18V 8-SOIC 0.8V, 2.4V 12A, 12A Single Non-Inverting - Surface Mount 20ns, 24ns - -40°C ~ 125°C (TA) -
TC4423AVPA

TC4423AVPA

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

272 -
TC4423AVPA

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-PDIP 0.8V, 2.4V 4.5A, 4.5A Independent Inverting - Through Hole 12ns, 12ns - -40°C ~ 150°C (TJ) -
TC4425AVPA

TC4425AVPA

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

179 -
TC4425AVPA

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-PDIP 0.8V, 2.4V 4.5A, 4.5A Independent Inverting, Non-Inverting - Through Hole 12ns, 12ns - -40°C ~ 150°C (TJ) -
MCP14E10-E/P

MCP14E10-E/P

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

150 -
MCP14E10-E/P

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-PDIP 0.8V, 2.4V 3A, 3A Independent Non-Inverting - Through Hole 25ns, 25ns - -40°C ~ 150°C (TJ) -
MIC4420ZT

MIC4420ZT

IC GATE DRVR LOW-SIDE TO220-5

Microchip Technology

299 -
MIC4420ZT

数据表

- TO-220-5 Tube Active Not Verified Low-Side 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V TO-220-5 0.8V, 2.4V 6A, 6A Single Non-Inverting - Through Hole 12ns, 13ns - 0°C ~ 150°C (TJ) -
MIC4425YN

MIC4425YN

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

220 -
MIC4425YN

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-PDIP 0.8V, 2.4V 3A, 3A Independent Inverting, Non-Inverting - Through Hole 28ns, 32ns - -40°C ~ 150°C (TJ) -
MIC4422ZM

MIC4422ZM

IC GATE DRVR LOW-SIDE 8SOIC

Microchip Technology

685 -
MIC4422ZM

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Low-Side 1 IGBT, N-Channel MOSFET 4.5V ~ 18V 8-SOIC 0.8V, 2.4V 9A, 9A Single Non-Inverting - Surface Mount 20ns, 24ns - 0°C ~ 150°C (TJ) -
MCP1405-E/SN

MCP1405-E/SN

IC GATE DRVR LOW-SIDE 8SOIC

Microchip Technology

198 -
MCP1405-E/SN

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-SOIC 0.8V, 2.4V 4.5A, 4.5A Independent Inverting, Non-Inverting - Surface Mount 15ns, 18ns - -40°C ~ 150°C (TJ) -
MIC4101YM

MIC4101YM

IC GATE DRVR HALF-BRIDGE 8SOIC

Microchip Technology

169 -
MIC4101YM

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 16V 8-SOIC 0.8V, 2.2V 2A, 2A Independent Non-Inverting 118 V Surface Mount 400ns, 400ns - -40°C ~ 125°C (TJ) -
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