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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
ISL6609AIBZ

ISL6609AIBZ

AND GATE BASED MOSFET DRIVER, 4A

Intersil

462 -
ISL6609AIBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active Not Verified Half-Bridge 2 N-Channel MOSFET 4.5V ~ 5.5V 8-SOIC 1V, 2V -, 4A Synchronous Non-Inverting 36 V Surface Mount 8ns, 8ns - -40°C ~ 125°C (TJ) -
UCC27222PWPR

UCC27222PWPR

UCC27222 HIGH-EFFICIENCY PREDICT

Unitrode

26,000 -
UCC27222PWPR

数据表

- 14-PowerTSSOP (0.173", 4.40mm Width) Bulk Active Not Verified Half-Bridge 2 N-Channel MOSFET 3.7V ~ 20V 14-HTSSOP 0.7V, 2.6V 4A, 4A Synchronous Non-Inverting - Surface Mount 17ns, 17ns - -55°C ~ 115°C (TJ) -
LM5100AM/NOPB

LM5100AM/NOPB

LM5100A 3A HIGH VOLTAGE HIGH-SID

National Semiconductor

316 -
LM5100AM/NOPB

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 14V 8-SOIC 2.3V, - 3A, 3A Independent Non-Inverting 118 V Surface Mount 430ns, 260ns - -40°C ~ 125°C (TJ) -
LM5100BMA/NOPB

LM5100BMA/NOPB

LM5100B 2A HIGH VOLTAGE HIGH-SID

National Semiconductor

190 -
LM5100BMA/NOPB

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 14V 8-SOIC 2.3V, - 2A, 2A Independent Non-Inverting 118 V Surface Mount 570ns, 430ns - -40°C ~ 125°C (TJ) -
LM5100AMR/NOPB

LM5100AMR/NOPB

LM5100A 3A HIGH VOLTAGE HIGH-SID

National Semiconductor

180 -
LM5100AMR/NOPB

数据表

- 8-PowerSOIC (0.154", 3.90mm Width) Bulk Active Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 14V 8-SO PowerPad 2.3V, - 3A, 3A Independent Non-Inverting 118 V Surface Mount 430ns, 260ns - -40°C ~ 125°C (TJ) -
HIP2101IRZ

HIP2101IRZ

HALF BRIDGE BASED MOSFET DRIVER,

Intersil

2,190 -
HIP2101IRZ

数据表

- 16-VQFN Exposed Pad Bulk Active Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 14V 16-QFN (5x5) 0.8V, 2.2V 2A, 2A Independent Non-Inverting 114 V Surface Mount 10ns, 10ns - -55°C ~ 150°C (TJ) -
IRS21091PBF

IRS21091PBF

IRS21091 - GATE DRIVER

International Rectifier

17,200 -
IRS21091PBF

数据表

- 8-DIP (0.300", 7.62mm) Bulk Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.5V 290mA, 600mA Synchronous Non-Inverting 600 V Through Hole 100ns, 35ns - -40°C ~ 150°C (TJ) -
IR21094PBF

IR21094PBF

IR21094 - GATE DRIVER

International Rectifier

1,725 -
IR21094PBF

数据表

- 14-DIP (0.300", 7.62mm) Bulk Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-DIP 0.8V, 2.9V 200mA, 350mA Synchronous Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
IRS21084PBF

IRS21084PBF

IRS21084 - GATE DRIVER

International Rectifier

1,000 -
IRS21084PBF

数据表

- 14-DIP (0.300", 7.62mm) Bulk Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-DIP 0.8V, 2.5V 290mA, 600mA Independent Inverting, Non-Inverting 600 V Through Hole 100ns, 35ns - -40°C ~ 150°C (TJ) -
ISL89163FBEAZ

ISL89163FBEAZ

AND GATE BASED MOSFET DRIVER, 6A

Intersil

9,355 -
ISL89163FBEAZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Exposed Pad Bulk Active Not Verified Low-Side 2 N-Channel MOSFET 4.5V ~ 16V 8-SOIC-EP 1.22V, 2.08V 6A, 6A Independent Non-Inverting - Surface Mount 20ns, 20ns - -40°C ~ 125°C (TJ) -
ISL89163FBEBZ

ISL89163FBEBZ

AND GATE BASED MOSFET DRIVER, 6A

Intersil

6,222 -
ISL89163FBEBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Exposed Pad Bulk Active Not Verified Low-Side 2 N-Channel MOSFET 4.5V ~ 16V 8-SOIC-EP 1.85V, 3.15V 6A, 6A Independent Non-Inverting - Surface Mount 20ns, 20ns - -40°C ~ 125°C (TJ) -
ISL89165FBEAZ

ISL89165FBEAZ

AND GATE BASED MOSFET DRIVER, 6A

Intersil

4,640 -
ISL89165FBEAZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Exposed Pad Bulk Active Not Verified Low-Side 2 N-Channel MOSFET 4.5V ~ 16V 8-SOIC-EP 1.22V, 2.08V 6A, 6A Independent Inverting, Non-Inverting - Surface Mount 20ns, 20ns - -40°C ~ 125°C (TJ) -
ISL89164FBEBZ

ISL89164FBEBZ

AND GATE BASED MOSFET DRIVER, 6A

Intersil

1,692 -
ISL89164FBEBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Exposed Pad Bulk Active Not Verified Low-Side 2 N-Channel MOSFET 4.5V ~ 16V 8-SOIC-EP 1.85V, 3.15V 6A, 6A Independent Inverting - Surface Mount 20ns, 20ns - -40°C ~ 125°C (TJ) -
ISL89164FBEAZ

ISL89164FBEAZ

AND GATE BASED MOSFET DRIVER, 6A

Intersil

812 -
ISL89164FBEAZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Exposed Pad Bulk Active Not Verified Low-Side 2 N-Channel MOSFET 4.5V ~ 16V 8-SOIC-EP 1.22V, 2.08V 6A, 6A Independent Inverting - Surface Mount 20ns, 20ns - -40°C ~ 125°C (TJ) -
IRS21064PBF

IRS21064PBF

IRS21064 - GATE DRIVER

International Rectifier

19,875 -
IRS21064PBF

数据表

- 14-DIP (0.300", 7.62mm) Bulk Active Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-DIP 0.8V, 2.5V 290mA, 600mA Independent Non-Inverting 600 V Through Hole 100ns, 35ns - -40°C ~ 150°C (TJ) -
IR2301PBF

IR2301PBF

IR2301 - GATE DRIVER

International Rectifier

10,450 -
IR2301PBF

数据表

* - Bulk Active Not Verified - - - - - - - - - - - - - - -
IRS21094PBF

IRS21094PBF

IRS21094 - GATE DRIVER

International Rectifier

9,650 -
IRS21094PBF

数据表

- 14-DIP (0.300", 7.62mm) Bulk Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-DIP 0.8V, 2.5V 290mA, 600mA Synchronous Non-Inverting 600 V Through Hole 100ns, 35ns - -40°C ~ 150°C (TJ) -
IRS2184PBF

IRS2184PBF

IRS2184 - GATE DRIVER

International Rectifier

3,450 -
IRS2184PBF

数据表

* - Bulk Active - - - - - - - - - - - - - - - -
IR2102PBF

IR2102PBF

IR2102 - GATE DRIVER

International Rectifier

7,564 -
IR2102PBF

数据表

- 8-DIP (0.300", 7.62mm) Bulk Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 3V 210mA, 360mA Independent Inverting 600 V Through Hole 100ns, 50ns - -40°C ~ 150°C (TJ) -
IRS2308PBF

IRS2308PBF

IRS2308 - GATE DRIVER

International Rectifier

8,450 -
IRS2308PBF

数据表

* - Bulk Active Not Verified - - - - - - - - - - - - - - -
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