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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
TC4627CPA

TC4627CPA

IC GATE DRVR HI/LOW SIDE 8DIP

Microchip Technology

218 -
TC4627CPA

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified High-Side or Low-Side 1 N-Channel, P-Channel MOSFET 4V ~ 6V 8-PDIP 0.8V, 2.4V 1.5A, 1.5A Single Non-Inverting - Through Hole 33ns, 27ns - 0°C ~ 70°C (TA) -
EL7154CN

EL7154CN

BUFFER/INVERTER PERIPHL DRIVER

Intersil

6,093 -
EL7154CN

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 4.5V ~ 16V 8-PDIP 0.6V, 2.4V 4A, 4A Synchronous Non-Inverting - Through Hole 4ns, 4ns - -40°C ~ 125°C (TJ) -
EL7154CN

EL7154CN

BUFFER/INVERTER BASED PERIPHERAL

Elantec

3,220 -
EL7154CN

数据表

- 8-DIP (0.300", 7.62mm) Bulk Active Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 4.5V ~ 16V 8-PDIP 0.6V, 2.4V 4A, 4A Synchronous Non-Inverting - Through Hole 4ns, 4ns - -40°C ~ 125°C (TJ) -
IR2233JPBF

IR2233JPBF

IR2233J - GATE DRIVER

International Rectifier

1,988 -
IR2233JPBF

数据表

- 44-LCC (J-Lead), 32 Leads Bulk Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 44-PLCC, 32 Leads (16.58x16.58) 0.8V, 2.2V 200mA, 420mA 3-Phase Non-Inverting 1200 V Surface Mount 90ns, 40ns - 125°C (TJ) -
UC2706N

UC2706N

IC GATE DRVR LOW-SIDE 16DIP

Texas Instruments

0 -
UC2706N

数据表

- 16-DIP (0.300", 7.62mm) Bulk Obsolete Not Verified Low-Side 2 N-Channel MOSFET 5V ~ 40V 16-PDIP 0.8V, 2.2V 1.5A, 1.5A Independent Inverting, Non-Inverting - Through Hole 40ns, 30ns - -25°C ~ 85°C (TA) -
HIP0084AB

HIP0084AB

QUAD POWER DRIVERS W/SERIAL DIAG

Harris Corporation

3,310 -
HIP0084AB

数据表

- 20-SOIC (0.433", 11.00mm Width) Exposed Pad Bulk Active Not Verified Low-Side 4 N-Channel MOSFET 5.5V ~ 35V 20-PSOP - 5A, 2A Synchronous Non-Inverting - Surface Mount - - -40°C ~ 125°C (TA) -
EL7155CN

EL7155CN

HALF BRIDGE BASED PERIPHERAL DRI

Elantec

3,862 -
EL7155CN

数据表

- 8-DIP (0.300", 7.62mm) Bulk Active Not Verified High-Side or Low-Side 2 IGBT 4.5V ~ 16.5V 8-PDIP 0.8V, 2.4V 3.5A, 3.5A Synchronous Non-Inverting - Through Hole 14.5ns, 15ns - -40°C ~ 125°C (TJ) -
IRS26302DJPBF

IRS26302DJPBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies

0 -
IRS26302DJPBF

数据表

- 44-LCC (J-Lead), 32 Leads Bulk Discontinued at Digi-Key Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 44-PLCC, 32 Leads (16.58x16.58) 0.8V, 2.5V 200mA, 350mA 3-Phase Non-Inverting 600 V Surface Mount 125ns, 50ns - -40°C ~ 150°C (TJ) -
IRS26302DJPBF-IR

IRS26302DJPBF-IR

HALF BRIDGE BASED IGBT/MOSFET DR

International Rectifier

5,859 -
IRS26302DJPBF-IR

数据表

- 44-LCC (J-Lead), 32 Leads Bulk Active Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 44-PLCC, 32 Leads (16.51x16.51) 0.8V, 2.5V 200mA, 350mA 3-Phase Non-Inverting 600 V Surface Mount 125ns, 50ns - -40°C ~ 125°C (TA) -
IR21834PBF

IR21834PBF

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

0 -
IR21834PBF

数据表

- 14-DIP (0.300", 7.62mm) Bulk Discontinued at Digi-Key Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-DIP 0.8V, 2.7V 1.9A, 2.3A Independent Inverting, Non-Inverting 600 V Through Hole 40ns, 20ns - -40°C ~ 150°C (TJ) -
R2J20651NP#G3

R2J20651NP#G3

HALF BRIDGE BASED MOSFET DRIVER

Renesas Electronics Corporation

300,000 -
R2J20651NP#G3

数据表

* - Bulk Active Not Verified - - - - - - - - - - - - - - -
R2J20657CNP#G2

R2J20657CNP#G2

HALF BRIDGE BASED MOSFET DRIVER

Renesas Electronics Corporation

42,500 -
R2J20657CNP#G2

数据表

* - Bulk Active Not Verified - - - - - - - - - - - - - - -
R2J20652ANP#G3

R2J20652ANP#G3

HALF BRIDGE BASED MOSFET DRIVER

Renesas Electronics Corporation

32,010 -
R2J20652ANP#G3

数据表

* - Bulk Active Not Verified - - - - - - - - - - - - - - -
R2J20657NP#G3

R2J20657NP#G3

HALF BRIDGE BASED MOSFET DRIVER

Renesas Electronics Corporation

2,500 -
R2J20657NP#G3

数据表

- 40-WFQFN Exposed Pad Bulk Obsolete Not Verified High-Side or Low-Side 1 N-Channel MOSFET 4.5V ~ 16V 40-QFN (6x6) 0.8V, 2.6V - Independent TTL 25 V Surface Mount - - -40°C ~ 150°C (TJ) -
MAX15070BEUT+

MAX15070BEUT+

3A SOURCE, MOSFET DRIVER

Analog Devices Inc./Maxim Integrated

1,979 -
MAX15070BEUT+

数据表

- SOT-23-6 Bulk Active Not Verified Low-Side 1 N-Channel MOSFET 6V ~ 14V SOT-23-6 2V, 4.25V 3A, 7A Single Inverting, Non-Inverting - Surface Mount 6ns, 4ns - -40°C ~ 125°C (TJ) -
MAX620EPN

MAX620EPN

IC GATE DRVR HIGH-SIDE 18DIP

Analog Devices Inc./Maxim Integrated

0 -
MAX620EPN

数据表

- 18-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side 4 N-Channel MOSFET 4.5V ~ 16.5V 18-PDIP 0.8V, 2.4V - Independent Non-Inverting - Through Hole 1.7µs, 2.5µs - -40°C ~ 85°C (TA) -
MAX5054BATA+

MAX5054BATA+

BUFFER/INVERTER BASED MOSFET DRI

Analog Devices Inc./Maxim Integrated

6,359 -
MAX5054BATA+

数据表

- 8-WDFN Exposed Pad Bulk Active Not Verified Half-Bridge 2 N-Channel MOSFET 4V ~ 15V 8-TDFN-EP (3x3) -, 0.8V 4A, 4A Independent Inverting, Non-Inverting - Surface Mount 4ns, 4ns - -40°C ~ 125°C (TA) -
R2J20658NP#G0

R2J20658NP#G0

HALF BRIDGE BASED MOSFET DRIVER

Renesas Electronics Corporation

315,000 -
R2J20658NP#G0

数据表

* - Bulk Active Not Verified - - - - - - - - - - - - - - -
R2J20658BNP#G0

R2J20658BNP#G0

HALF BRIDGE BASED MOSFET DRIVER

Renesas Electronics Corporation

167,500 -
R2J20658BNP#G0

数据表

* - Bulk Active Not Verified - - - - - - - - - - - - - - -
LTC4440IMS8E#TRPBF

LTC4440IMS8E#TRPBF

IC GATE DRVR HIGH-SIDE 8MSOP

Analog Devices Inc.

2,400 -
LTC4440IMS8E#TRPBF

数据表

- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad Tape & Reel (TR) Active Not Verified High-Side 1 N-Channel MOSFET 8V ~ 15V 8-MSOP-EP 1.3V, 1.6V 2.4A, 2.4A Single Non-Inverting 80 V Surface Mount 10ns, 7ns - -40°C ~ 125°C (TJ) -
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