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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
IRS21856SPBF

IRS21856SPBF

HIGH AND LOW SIDE DRIVER

International Rectifier

4,400 -
IRS21856SPBF

数据表

- 14-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-SOIC 0.8V, 3.5V 500mA, 500mA Independent Non-Inverting 600 V Surface Mount 30ns, 20ns - -55°C ~ 150°C (TJ) -
IRS2609DSPBF

IRS2609DSPBF

HALF-BRIDGE DRIVER

International Rectifier

2,426 -
IRS2609DSPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 2.2V 200mA, 350mA Synchronous Non-Inverting 600 V Surface Mount 150ns, 50ns - -40°C ~ 150°C (TJ) -
IRS21281SPBF

IRS21281SPBF

BUFFER/INVERTER BASED MOSFET DRI

International Rectifier

19,000 -
IRS21281SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active Not Verified High-Side 1 IGBT, N-Channel MOSFET 9V ~ 20V 8-SOIC 0.8V, 2.5V 290mA, 600mA Single Inverting 600 V Surface Mount 80ns, 40ns - -40°C ~ 150°C (TJ) -
IRS21281PBF

IRS21281PBF

BUFFER/INVERTER BASED MOSFET DRI

International Rectifier

11,400 -
IRS21281PBF

数据表

- 8-DIP (0.300", 7.62mm) Bulk Active Not Verified High-Side 1 IGBT, N-Channel MOSFET 9V ~ 20V 8-PDIP 0.8V, 2.5V 290mA, 600mA Single Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
IRS2128PBF

IRS2128PBF

BUFFER/INVERTER BASED MOSFET DRI

International Rectifier

8,109 -
IRS2128PBF

数据表

- 8-DIP (0.300", 7.62mm) Bulk Active Not Verified High-Side 1 IGBT, N-Channel MOSFET 12V ~ 20V 8-PDIP 0.8V, 2.5V 290mA, 600mA Single Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
IRS2128SPBF

IRS2128SPBF

BUFFER/INVERTER BASED MOSFET DRI

International Rectifier

526 -
IRS2128SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active Not Verified High-Side 1 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 2.5V 290mA, 600mA Single Inverting 600 V Surface Mount 80ns, 40ns - -40°C ~ 125°C (TJ) -
IRS2128STRPBF

IRS2128STRPBF

BUFFER/INVERTER BASED MOSFET DRI

International Rectifier

275 -
IRS2128STRPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active Not Verified High-Side 1 IGBT, N-Channel MOSFET 12V ~ 20V 8-SOIC 0.8V, 2.5V 290mA, 600mA Single Inverting 600 V Surface Mount 80ns, 40ns - -40°C ~ 150°C (TJ) -
IR4426PBF

IR4426PBF

IR4426 - GATE DRIVER

International Rectifier

15,670 -
IR4426PBF

数据表

- 8-DIP (0.300", 7.62mm) Bulk Active Not Verified Low-Side 2 IGBT, N-Channel MOSFET 6V ~ 20V 8-PDIP 0.8V, 2.7V 2.3A, 3.3A Independent Inverting - Through Hole 15ns, 10ns - -40°C ~ 150°C (TJ) -
IRS2117PBF

IRS2117PBF

IRS2117 - GATE DRIVER

International Rectifier

2,997 -
IRS2117PBF

数据表

- 8-DIP (0.300", 7.62mm) Bulk Active Not Verified High-Side 1 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 6V, 9.5V 290mA, 600mA Single Non-Inverting 600 V Through Hole 75ns, 35ns - -40°C ~ 150°C (TJ) -
IR21064PBF

IR21064PBF

HALF BRIDGE BASED MOSFET DRIVER,

International Rectifier

3,650 -
IR21064PBF

数据表

- 14-DIP (0.300", 7.62mm) Bulk Active Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-DIP 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
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