| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 可编程 | 驱动配置 | 驱动器数量 | 门类型 | 电压 - 电源 | 供应商设备封装 | 逻辑电压 - VIL, VIH | 电流 - 峰值输出(源,吸) | 通道类型 | 输入类型 | 高侧电压 - 最大值(自举) | 安装类型 | 上升/下降时间(典型值) | 认证 | 工作温度 | 等级 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IR2106IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8-PDIP | 0.8V, 2.9V | 200mA, 350mA | Independent | Non-Inverting | 600 V | Through Hole | 150ns, 50ns | - | -40°C ~ 150°C (TJ) | - |
|
IR2108IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8-PDIP | 0.8V, 2.9V | 200mA, 350mA | Independent | Non-Inverting | 600 V | Through Hole | 150ns, 50ns | - | -40°C ~ 150°C (TJ) | - |
|
IR2110IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 14-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 14-DIP | 6V, 9.5V | 2A, 2A | Independent | Non-Inverting | 500 V | Through Hole | 25ns, 17ns | - | -40°C ~ 150°C (TJ) | - |
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IR2112IC GATE DRVR HI/LOW SIDE 14DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 14-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 14-DIP | 6V, 9.5V | 250mA, 500mA | Independent | Non-Inverting | 600 V | Through Hole | 80ns, 40ns | - | -40°C ~ 150°C (TJ) | - |
|
IR2113IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 14-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 14-DIP | 6V, 9.5V | 2A, 2A | Independent | Non-Inverting | 600 V | Through Hole | 25ns, 17ns | - | -40°C ~ 150°C (TJ) | - |
|
IR2117IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | High-Side | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8-PDIP | 6V, 9.5V | 250mA, 500mA | Single | Non-Inverting | 600 V | Through Hole | 80ns, 40ns | - | -40°C ~ 150°C (TJ) | - |
|
IR2125IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | High-Side | 1 | IGBT, N-Channel MOSFET | 0V ~ 18V | 8-PDIP | 0.8V, 2.2V | 1.6A, 3.3A | Single | Non-Inverting | 500 V | Through Hole | 43ns, 26ns | - | -40°C ~ 150°C (TJ) | - |
|
IR2127IC GATE DRVR HI/LOW SIDE 8DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Tube | Obsolete | Not Verified | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 8-PDIP | 0.8V, 3V | 250mA, 500mA | Single | Non-Inverting | 600 V | Through Hole | 80ns, 40ns | - | -40°C ~ 150°C (TJ) | - |
|
IR2130IC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 28-DIP (0.600", 15.24mm) | Tube | Obsolete | Not Verified | Half-Bridge | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 28-PDIP | 0.8V, 2.2V | 250mA, 500mA | 3-Phase | Inverting | 600 V | Through Hole | 80ns, 35ns | - | -40°C ~ 150°C (TJ) | - |
|
IR2133JIC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies |
0 | - |
|
数据表 |
- | 44-LCC (J-Lead), 32 Leads | Tube | Obsolete | Not Verified | Half-Bridge | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 44-PLCC, 32 Leads (16.58x16.58) | 0.8V, 2.2V | 250mA, 500mA | 3-Phase | Inverting | 600 V | Surface Mount | 90ns, 40ns | - | 125°C (TJ) | - |