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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
AUIRS2012STR

AUIRS2012STR

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
AUIRS2012STR

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 10V ~ 20V PG-DSO-8 0.7V, 2.5V 2A, 2A Independent Non-Inverting 200 V Surface Mount 22ns, 15ns AEC-Q100 -40°C ~ 125°C (TA) Automotive
IRS21281STRPBF

IRS21281STRPBF

IC GATE DRVR HIGH-SIDE 8SOIC

Infineon Technologies

0 -
IRS21281STRPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete Not Verified High-Side 1 IGBT, N-Channel MOSFET 9V ~ 20V 8-SOIC 0.8V, 2.5V 290mA, 600mA Single Inverting 600 V Surface Mount 80ns, 40ns - -40°C ~ 150°C (TJ) -
IRS2128STRPBF

IRS2128STRPBF

IC GATE DRVR HIGH-SIDE 8SOIC

Infineon Technologies

0 -
IRS2128STRPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete Not Verified High-Side 1 IGBT, N-Channel MOSFET 12V ~ 20V 8-SOIC 0.8V, 2.5V 290mA, 600mA Single Inverting 600 V Surface Mount 80ns, 40ns - -40°C ~ 150°C (TJ) -
IR2181PBF

IR2181PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR2181PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.7V 1.9A, 2.3A Independent Non-Inverting 600 V Through Hole 40ns, 20ns - -40°C ~ 150°C (TJ) -
IR2122

IR2122

IC GATE DRVR HIGH-SIDE 8DIP

Infineon Technologies

0 -
IR2122

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side 1 IGBT, N-Channel MOSFET 13V ~ 20V 8-PDIP 0.8V, 3V 130mA, 130mA Single Inverting 600 V Through Hole 250ns, 250ns - -40°C ~ 150°C (TJ) -
IR2112-2

IR2112-2

IC GATE DRVR HI/LOW SIDE 16DIP

Infineon Technologies

0 -
IR2112-2

数据表

- 16-DIP (0.300", 7.62mm), 14 Leads Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 16-PDIP 6V, 9.5V 250mA, 500mA Independent Non-Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
6EDL04I06NCX1SA1

6EDL04I06NCX1SA1

IC GATE DRVR HALF-BRIDGE CHIP

Infineon Technologies

0 -
6EDL04I06NCX1SA1

数据表

EiceDRIVER™ Die Bulk Active Not Verified Half-Bridge 6 IGBT 13V ~ 17.5V Chip 1.1V, 1.7V - 3-Phase Non-Inverting 600 V Surface Mount 60ns, 26ns - -40°C ~ 125°C (TJ) -
6EDL04I06PCX1SA1

6EDL04I06PCX1SA1

IC GATE DRVR HALF-BRIDGE CHIP

Infineon Technologies

0 -
6EDL04I06PCX1SA1

数据表

EiceDRIVER™ Die Bulk Active Not Verified Half-Bridge 6 IGBT 13V ~ 17.5V Chip 1.1V, 1.7V - 3-Phase Non-Inverting 600 V Surface Mount 60ns, 26ns - -40°C ~ 125°C (TJ) -
6EDL04N06PCX1SA1

6EDL04N06PCX1SA1

IC GATE DRVR HALF-BRIDGE CHIP

Infineon Technologies

0 -
6EDL04N06PCX1SA1

数据表

EiceDRIVER™ Die Bulk Active Not Verified Half-Bridge 6 IGBT 13V ~ 17.5V Chip 1.1V, 1.7V - 3-Phase Non-Inverting 600 V Surface Mount 60ns, 26ns - -40°C ~ 125°C (TJ) -
IR21091STRPBF

IR21091STRPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
IR21091STRPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 2.9V 200mA, 350mA Synchronous Non-Inverting 600 V Surface Mount 150ns, 50ns - -40°C ~ 150°C (TJ) -
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