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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
IR2130STRPBF

IR2130STRPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies

2,971 -
IR2130STRPBF

数据表

- 28-SOIC (0.295", 7.50mm Width) Tape & Reel (TR) Active Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 28-SOIC 0.8V, 2.2V 250mA, 500mA 3-Phase Inverting 600 V Surface Mount 80ns, 35ns - -40°C ~ 150°C (TJ) -
IR2132STRPBF

IR2132STRPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies

2,251 -
IR2132STRPBF

数据表

- 28-SOIC (0.295", 7.50mm Width) Tape & Reel (TR) Active Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 28-SOIC 0.8V, 2.2V 250mA, 500mA 3-Phase Inverting 600 V Surface Mount 80ns, 35ns - -40°C ~ 150°C (TJ) -
IR2110PBF

IR2110PBF

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

2,935 -
IR2110PBF

数据表

- 14-DIP (0.300", 7.62mm) Tube Not For New Designs Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 14-DIP 6V, 9.5V 2A, 2A Independent Non-Inverting 500 V Through Hole 25ns, 17ns - -40°C ~ 150°C (TJ) -
IR2113PBF

IR2113PBF

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

779 -
IR2113PBF

数据表

- 14-DIP (0.300", 7.62mm) Tube Not For New Designs Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 14-DIP 6V, 9.5V 2A, 2A Independent Non-Inverting 600 V Through Hole 25ns, 17ns - -40°C ~ 150°C (TJ) -
TLE92108232QXXUMA1

TLE92108232QXXUMA1

IC GATE DRVR HALF-BRIDGE 48VFQFN

Infineon Technologies

1,665 -
TLE92108232QXXUMA1

数据表

MOTIX™ 48-VFQFN Exposed Pad Tape & Reel (TR) Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 6V ~ 28V PG-VQFN-48-31 - 100mA, 100mA Synchronous Non-Inverting 950 V Surface Mount - - - -
IR2125PBF

IR2125PBF

IC GATE DRVR HIGH-SIDE 8DIP

Infineon Technologies

2,754 -
IR2125PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified High-Side 1 IGBT, N-Channel MOSFET 0V ~ 18V 8-PDIP 0.8V, 2.2V 1.6A, 3.3A Single Non-Inverting 500 V Through Hole 43ns, 26ns - -40°C ~ 150°C (TJ) -
IR2085STRPBF

IR2085STRPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

985 -
IR2085STRPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs Not Verified Half-Bridge 2 N-Channel MOSFET 10V ~ 15V 8-SOIC - 1A, 1A Independent RC Input Circuit 100 V Surface Mount 40ns, 20ns AEC-Q100 -40°C ~ 150°C (TJ) Automotive
IR2125STRPBF

IR2125STRPBF

IC GATE DRVR HIGH-SIDE 16SOIC

Infineon Technologies

3,199 -
IR2125STRPBF

数据表

- 16-SOIC (0.295", 7.50mm Width) Tape & Reel (TR) Active Not Verified High-Side 1 IGBT, N-Channel MOSFET 0V ~ 18V 16-SOIC 0.8V, 2.2V 1.6A, 3.3A Single Non-Inverting 500 V Surface Mount 43ns, 26ns - -40°C ~ 150°C (TJ) -
IR2110SPBF

IR2110SPBF

IC GATE DRVR HALF-BRIDGE 16SOIC

Infineon Technologies

525 -
IR2110SPBF

数据表

- 16-SOIC (0.295", 7.50mm Width) Tube Not For New Designs Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 16-SOIC 6V, 9.5V 2A, 2A Independent Non-Inverting 500 V Surface Mount 25ns, 17ns - -40°C ~ 150°C (TJ) -
IR2112PBF

IR2112PBF

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies

964 -
IR2112PBF

数据表

- 14-DIP (0.300", 7.62mm) Tube Not For New Designs Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-DIP 6V, 9.5V 250mA, 500mA Independent Non-Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
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