| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 可编程 | 驱动配置 | 驱动器数量 | 门类型 | 电压 - 电源 | 供应商设备封装 | 逻辑电压 - VIL, VIH | 电流 - 峰值输出(源,吸) | 通道类型 | 输入类型 | 高侧电压 - 最大值(自举) | 安装类型 | 上升/下降时间(典型值) | 认证 | 工作温度 | 等级 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRS2106SPBFIC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies |
2,569 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | Not Verified | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8-SOIC | 0.8V, 2.5V | 290mA, 600mA | Independent | Non-Inverting | 600 V | Surface Mount | 100ns, 35ns | - | -40°C ~ 150°C (TJ) | - |
|
IRS2011PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Bulk | Obsolete | Not Verified | Half-Bridge | 2 | N-Channel MOSFET | 10V ~ 20V | 8-PDIP | 0.8V, 2.7V | 1A, 1A | Independent | Inverting | 200 V | Through Hole | 25ns, 15ns | - | -40°C ~ 150°C (TJ) | - |
|
IRS2001PBF-INFBUFFER/INVERTER BASED PERIPHERAL Infineon Technologies |
20,350 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Bulk | Active | Not Verified | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8-DIP | 0.8V, 2.5V | 290mA, 600mA | Independent | Non-Inverting | 200 V | Through Hole | 70ns, 35ns | - | -40°C ~ 125°C (TJ) | - |
|
IRS2101SPBFIC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies |
2,428 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | Not Verified | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8-SOIC | 0.8V, 2.5V | 290mA, 600mA | Independent | Non-Inverting | 600 V | Surface Mount | 70ns, 35ns | - | -40°C ~ 150°C (TJ) | - |
|
IRS21091SPBFIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
2,429 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | Not Verified | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8-SOIC | 0.8V, 2.5V | 290mA, 600mA | Synchronous | Non-Inverting | 600 V | Surface Mount | 100ns, 35ns | - | -40°C ~ 150°C (TJ) | - |
|
IRS2127PBFIC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Bulk | Obsolete | Not Verified | High-Side | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 8-PDIP | 0.8V, 2.5V | 290mA, 600mA | Single | Non-Inverting | 600 V | Through Hole | 80ns, 40ns | - | -40°C ~ 150°C (TJ) | - |
|
IRS2108PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Bulk | Obsolete | Not Verified | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8-PDIP | 0.8V, 2.5V | 290mA, 600mA | Independent | Inverting, Non-Inverting | 600 V | Through Hole | 100ns, 35ns | - | -40°C ~ 150°C (TJ) | - |
|
IR2128PBFIC GATE DRVR HI/LOW SIDE 8DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Bulk | Active | Not Verified | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 8-PDIP | 0.8V, 3V | 250mA, 500mA | Single | Inverting | 600 V | Through Hole | 80ns, 40ns | - | -40°C ~ 150°C (TJ) | - |
|
IRS21867SPBFIC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies |
3,482 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | Not Verified | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8-SOIC | 0.8V, 2.5V | 4A, 4A | Independent | CMOS, TTL | 600 V | Surface Mount | 22ns, 18ns | - | -40°C ~ 150°C (TJ) | - |
|
IRS21531DPBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
0 | - |
|
数据表 |
- | 8-DIP (0.300", 7.62mm) | Bulk | Obsolete | Not Verified | Half-Bridge | 2 | N-Channel MOSFET | 10V ~ 15.4V | 8-PDIP | - | 180mA, 260mA | Synchronous | RC Input Circuit | 600 V | Through Hole | 120ns, 50ns | - | -40°C ~ 125°C (TJ) | - |