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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
IRS2106SPBF

IRS2106SPBF

IC GATE DRVR HI/LOW SIDE 8SOIC

Infineon Technologies

2,569 -
IRS2106SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 2.5V 290mA, 600mA Independent Non-Inverting 600 V Surface Mount 100ns, 35ns - -40°C ~ 150°C (TJ) -
IRS2011PBF

IRS2011PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IRS2011PBF

数据表

- 8-DIP (0.300", 7.62mm) Bulk Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.7V 1A, 1A Independent Inverting 200 V Through Hole 25ns, 15ns - -40°C ~ 150°C (TJ) -
IRS2001PBF-INF

IRS2001PBF-INF

BUFFER/INVERTER BASED PERIPHERAL

Infineon Technologies

20,350 -
IRS2001PBF-INF

数据表

- 8-DIP (0.300", 7.62mm) Bulk Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-DIP 0.8V, 2.5V 290mA, 600mA Independent Non-Inverting 200 V Through Hole 70ns, 35ns - -40°C ~ 125°C (TJ) -
IRS2101SPBF

IRS2101SPBF

IC GATE DRVR HI/LOW SIDE 8SOIC

Infineon Technologies

2,428 -
IRS2101SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 2.5V 290mA, 600mA Independent Non-Inverting 600 V Surface Mount 70ns, 35ns - -40°C ~ 150°C (TJ) -
IRS21091SPBF

IRS21091SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

2,429 -
IRS21091SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 2.5V 290mA, 600mA Synchronous Non-Inverting 600 V Surface Mount 100ns, 35ns - -40°C ~ 150°C (TJ) -
IRS2127PBF

IRS2127PBF

IC GATE DRVR HIGH-SIDE 8DIP

Infineon Technologies

0 -
IRS2127PBF

数据表

- 8-DIP (0.300", 7.62mm) Bulk Obsolete Not Verified High-Side 1 IGBT, N-Channel MOSFET 12V ~ 20V 8-PDIP 0.8V, 2.5V 290mA, 600mA Single Non-Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
IRS2108PBF

IRS2108PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IRS2108PBF

数据表

- 8-DIP (0.300", 7.62mm) Bulk Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.5V 290mA, 600mA Independent Inverting, Non-Inverting 600 V Through Hole 100ns, 35ns - -40°C ~ 150°C (TJ) -
IR2128PBF

IR2128PBF

IC GATE DRVR HI/LOW SIDE 8DIP

Infineon Technologies

0 -
IR2128PBF

数据表

- 8-DIP (0.300", 7.62mm) Bulk Active Not Verified High-Side or Low-Side 1 IGBT, N-Channel MOSFET 12V ~ 20V 8-PDIP 0.8V, 3V 250mA, 500mA Single Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
IRS21867SPBF

IRS21867SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

3,482 -
IRS21867SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 2.5V 4A, 4A Independent CMOS, TTL 600 V Surface Mount 22ns, 18ns - -40°C ~ 150°C (TJ) -
IRS21531DPBF

IRS21531DPBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IRS21531DPBF

数据表

- 8-DIP (0.300", 7.62mm) Bulk Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 10V ~ 15.4V 8-PDIP - 180mA, 260mA Synchronous RC Input Circuit 600 V Through Hole 120ns, 50ns - -40°C ~ 125°C (TJ) -
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