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制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
IRS2112STRPBF

IRS2112STRPBF

IC GATE DRVR HALF-BRIDGE 16SOIC

Infineon Technologies

2,989 -
IRS2112STRPBF

数据表

- 16-SOIC (0.295", 7.50mm Width) Tape & Reel (TR) Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 16-SOIC 6V, 9.5V 290mA, 600mA Independent Non-Inverting 600 V Surface Mount 75ns, 35ns - -40°C ~ 150°C (TJ) -
IRS21814MTRPBF

IRS21814MTRPBF

IC GATE DRVR HALF-BRIDGE 16MLPQ

Infineon Technologies

5,666 -
IRS21814MTRPBF

数据表

- 16-VFQFN Exposed Pad, 14 Leads Tape & Reel (TR) Active Not Verified Half-Bridge 2 N-Channel MOSFET 10V ~ 20V 16-MLPQ (4x4) 0.8V, 2.5V 1.9A, 2.3A Independent Non-Inverting 600 V Surface Mount 40ns, 20ns - -40°C ~ 150°C (TJ) -
IRS21844MTRPBF

IRS21844MTRPBF

IC GATE DRVR HALF-BRIDGE 16MLPQ

Infineon Technologies

3,797 -
IRS21844MTRPBF

数据表

- 16-VFQFN Exposed Pad, 14 Leads Tape & Reel (TR) Active Not Verified Half-Bridge 2 N-Channel MOSFET 10V ~ 20V 16-MLPQ (4x4) 0.8V, 2.5V 1.9A, 2.3A Synchronous Non-Inverting 600 V Surface Mount 40ns, 20ns - -40°C ~ 150°C (TJ) -
2ED2738S01GXTMA1

2ED2738S01GXTMA1

IC GATE DRVR HI/LOW SIDE VSON-10

Infineon Technologies

3,000 -
2ED2738S01GXTMA1

数据表

- - Tape & Reel (TR) Active Not Verified High-Side and Low-Side - - - - - - - - - - - - - -
2ED2778S01GXTMA1

2ED2778S01GXTMA1

IC GATE DRVR HALF-BRIDGE VSON-10

Infineon Technologies

197 -
2ED2778S01GXTMA1

数据表

- 10-VFDFN Exposed Pad Box Active - Half-Bridge 2 N-Channel MOSFET 7V ~ 18V PG-VSON-10-5 0.8V, 2V 4A, 8A Independent Non-Inverting 140 V Surface Mount 24ns, 12ns - -40°C ~ 125°C (TA) -
IR2128STRPBF

IR2128STRPBF

IC GATE DRVR HI/LOW SIDE 8SOIC

Infineon Technologies

7,178 -
IR2128STRPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active Not Verified High-Side or Low-Side 1 IGBT, N-Channel MOSFET 12V ~ 20V 8-SOIC 0.8V, 3V 250mA, 500mA Single Inverting 600 V Surface Mount 80ns, 40ns - -40°C ~ 150°C (TJ) -
2EDF8275FXUMA1

2EDF8275FXUMA1

IC GATE DRVR HALF-BRIDGE 16SOIC

Infineon Technologies

2,352 -
2EDF8275FXUMA1

数据表

EiceDRIVER™ 16-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active Not Verified Half-Bridge 2 N-Channel, P-Channel MOSFET 20V PG-DSO-16-11 -, 1.65V 4A, 8A Independent Non-Inverting - Surface Mount 6.5ns, 4.5ns - -40°C ~ 125°C (TA) -
IR21271PBF

IR21271PBF

IC GATE DRVR HI/LOW SIDE 8DIP

Infineon Technologies

2,941 -
IR21271PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified High-Side or Low-Side 1 IGBT, N-Channel MOSFET 9V ~ 20V 8-PDIP 0.8V, 3V 250mA, 500mA Single Non-Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
IR25607STRPBF

IR25607STRPBF

IC GATE DRVR HALF-BRIDGE 16SOIC

Infineon Technologies

479 -
IR25607STRPBF

数据表

- 16-SOIC (0.295", 7.50mm Width) Tape & Reel (TR) Active Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 16-SOIC 6V, 9.5V 2.5A, 2.5A Independent Non-Inverting 600 V Surface Mount 25ns, 17ns - -40°C ~ 150°C (TJ) -
6EDL04I065PRXUMA1

6EDL04I065PRXUMA1

6EDL04I065PRXUMA1

Infineon Technologies

3,000 -
6EDL04I065PRXUMA1

数据表

- 25-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Active - Half-Bridge 6 IGBT 10V ~ 25V PG-TSSOP-25 1.1V, 1.7V 165mA, 375mA 3-Phase Non-Inverting 650 V Surface Mount 60ns, 26ns - -40°C ~ 105°C (TA) -
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