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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 存储类型 技术 存储容量 存储组织 供应商设备封装 存储接口 时钟频率 存储格式 写周期时间 - 字,页 访问时间 安装类型 电压 - 电源 认证 工作温度 等级
IS25LP512M-JLLE-TR

IS25LP512M-JLLE-TR

IC FLASH 512MBIT SPI/QUAD 8WSON

ISSI, Integrated Silicon Solution Inc

2,784 -
IS25LP512M-JLLE-TR

数据表

- 8-WDFN Exposed Pad Tape & Reel (TR) Active Not Verified Non-Volatile FLASH - NOR 512Mbit 64M x 8 8-WSON (8x6) SPI - Quad I/O, QPI, DTR 133 MHz FLASH 1.6ms - Surface Mount 2.3V ~ 3.6V - -40°C ~ 105°C (TA) -
IS43TR16256BL-125KBL

IS43TR16256BL-125KBL

IC DRAM 4GBIT PARALLEL 96TWBGA

ISSI, Integrated Silicon Solution Inc

949 -
IS43TR16256BL-125KBL

数据表

- 96-TFBGA Tray Active Not Verified Volatile SDRAM - DDR3L 4Gbit 256M x 16 96-TWBGA (9x13) Parallel 800 MHz DRAM 15ns 20 ns Surface Mount 1.283V ~ 1.45V - 0°C ~ 95°C (TC) -
IS62WV51216BLL-55TLI

IS62WV51216BLL-55TLI

IC SRAM 8MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

507 -
IS62WV51216BLL-55TLI

数据表

- 44-TSOP (0.400", 10.16mm Width) Tray Active Not Verified Volatile SRAM - Asynchronous 8Mbit 512K x 16 44-TSOP II Parallel - SRAM 55ns 55 ns Surface Mount 2.5V ~ 3.6V - -40°C ~ 85°C (TA) -
MT41K256M16TW-107 AIT:P TR

MT41K256M16TW-107 AIT:P TR

IC DRAM 4GBIT PAR 96FBGA

Micron Technology Inc.

1,806 -
MT41K256M16TW-107 AIT:P TR

数据表

- 96-TFBGA Tape & Reel (TR) Active Not Verified Volatile SDRAM - DDR3L 4Gbit 256M x 16 96-FBGA (8x14) Parallel 933 MHz DRAM - 20 ns Surface Mount 1.283V ~ 1.45V AEC-Q100 -40°C ~ 95°C (TC) Automotive
MT41K256M16TW-107 AIT:P

MT41K256M16TW-107 AIT:P

IC DRAM 4GBIT PAR 96FBGA

Micron Technology Inc.

1,061 -
MT41K256M16TW-107 AIT:P

数据表

- 96-TFBGA Tray Active Not Verified Volatile SDRAM - DDR3L 4Gbit 256M x 16 96-FBGA (8x14) Parallel 933 MHz DRAM - 20 ns Surface Mount 1.283V ~ 1.45V AEC-Q100 -40°C ~ 95°C (TC) Automotive
MT25QL512ABB8E12-0SIT TR

MT25QL512ABB8E12-0SIT TR

IC FLASH 512MBIT SPI 24TPBGA

Micron Technology Inc.

6,273 -
MT25QL512ABB8E12-0SIT TR

数据表

- 24-TBGA Tape & Reel (TR) Active Verified Non-Volatile FLASH - NOR 512Mbit 64M x 8 24-T-PBGA (6x8) SPI - Quad I/O 133 MHz FLASH 8ms, 2.8ms - Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
MT25QU512ABB8E12-0SIT

MT25QU512ABB8E12-0SIT

IC FLASH 512MBIT SPI 24TPBGA

Micron Technology Inc.

506 -
MT25QU512ABB8E12-0SIT

数据表

- 24-TBGA Tray Active Verified Non-Volatile FLASH - NOR 512Mbit 64M x 8 24-T-PBGA (6x8) SPI - Quad I/O 133 MHz FLASH 8ms, 2.8ms - Surface Mount 1.7V ~ 2V - -40°C ~ 85°C (TA) -
MT25QU512ABB8E12-0SIT TR

MT25QU512ABB8E12-0SIT TR

IC FLASH 512MBIT SPI 24TPBGA

Micron Technology Inc.

22,819 -
MT25QU512ABB8E12-0SIT TR

数据表

- 24-TBGA Tape & Reel (TR) Active Verified Non-Volatile FLASH - NOR 512Mbit 64M x 8 24-T-PBGA (6x8) SPI - Quad I/O 133 MHz FLASH 8ms, 2.8ms - Surface Mount 1.7V ~ 2V - -40°C ~ 85°C (TA) -
MT46V16M16CY-5B IT:M

MT46V16M16CY-5B IT:M

IC DRAM 256MBIT PARALLEL 60FBGA

Micron Technology Inc.

6,893 -
MT46V16M16CY-5B IT:M

数据表

- 60-TFBGA Tray Active Not Verified Volatile SDRAM - DDR 256Mbit 16M x 16 60-FBGA (8x12.5) Parallel 200 MHz DRAM 15ns 700 ps Surface Mount 2.5V ~ 2.7V - -40°C ~ 85°C (TA) -
MT25QL512ABB1EW9-0SIT

MT25QL512ABB1EW9-0SIT

IC FLASH 512MBIT SPI 8WPDFN

Micron Technology Inc.

2,512 -
MT25QL512ABB1EW9-0SIT

数据表

- 8-WDFN Exposed Pad Tray Active Not Verified Non-Volatile FLASH - NOR 512Mbit 64M x 8 8-WPDFN (8x6) (MLP8) SPI - Quad I/O 133 MHz FLASH 8ms, 2.8ms - Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
IS62WV51216BLL-55BLI

IS62WV51216BLL-55BLI

IC SRAM 8MBIT PARALLEL 48MINIBGA

ISSI, Integrated Silicon Solution Inc

623 -
IS62WV51216BLL-55BLI

数据表

- 48-TFBGA Tray Active Not Verified Volatile SRAM - Asynchronous 8Mbit 512K x 16 48-miniBGA (7.2x8.7) Parallel - SRAM 55ns 55 ns Surface Mount 2.5V ~ 3.6V - -40°C ~ 85°C (TA) -
MT48LC16M16A2B4-6A IT:G TR

MT48LC16M16A2B4-6A IT:G TR

IC DRAM 256MBIT PAR 54VFBGA

Micron Technology Inc.

7,807 -
MT48LC16M16A2B4-6A IT:G TR

数据表

- 54-VFBGA Tape & Reel (TR) Active Not Verified Volatile SDRAM 256Mbit 16M x 16 54-VFBGA (8x8) Parallel 167 MHz DRAM 12ns 5.4 ns Surface Mount 3V ~ 3.6V - -40°C ~ 85°C (TA) -
MT48LC16M16A2B4-6A IT:G

MT48LC16M16A2B4-6A IT:G

IC DRAM 256MBIT PAR 54VFBGA

Micron Technology Inc.

1,979 -
MT48LC16M16A2B4-6A IT:G

数据表

- 54-VFBGA Bulk Active Not Verified Volatile SDRAM 256Mbit 16M x 16 54-VFBGA (8x8) Parallel 167 MHz DRAM 12ns 5.4 ns Surface Mount 3V ~ 3.6V - -40°C ~ 85°C (TA) -
MT46H64M16LFBF-5 IT:B

MT46H64M16LFBF-5 IT:B

IC DRAM 1GBIT PARALLEL 60VFBGA

Micron Technology Inc.

1,977 -
MT46H64M16LFBF-5 IT:B

数据表

- 60-VFBGA Tray Active Not Verified Volatile SDRAM - Mobile LPDDR 1Gbit 64M x 16 60-VFBGA (8x9) Parallel 200 MHz DRAM 15ns 5 ns Surface Mount 1.7V ~ 1.95V - -40°C ~ 85°C (TA) -
MT48LC16M16A2B4-7E IT:G

MT48LC16M16A2B4-7E IT:G

IC DRAM 256MBIT PAR 54VFBGA

Micron Technology Inc.

1,931 -
MT48LC16M16A2B4-7E IT:G

数据表

- 54-VFBGA Tray Active Not Verified Volatile SDRAM 256Mbit 16M x 16 54-VFBGA (8x8) Parallel 133 MHz DRAM 14ns 5.4 ns Surface Mount 3V ~ 3.6V - -40°C ~ 85°C (TA) -
MT46H64M16LFBF-5 IT:B TR

MT46H64M16LFBF-5 IT:B TR

IC DRAM 1GBIT PARALLEL 60VFBGA

Micron Technology Inc.

1,675 -
MT46H64M16LFBF-5 IT:B TR

数据表

- 60-VFBGA Tape & Reel (TR) Active Not Verified Volatile SDRAM - Mobile LPDDR 1Gbit 64M x 16 60-VFBGA (8x9) Parallel 200 MHz DRAM 15ns 5 ns Surface Mount 1.7V ~ 1.95V - -40°C ~ 85°C (TA) -
AS6C8016-55ZIN

AS6C8016-55ZIN

IC SRAM 8MBIT PARALLEL 44TSOP II

Alliance Memory, Inc.

2,266 -
AS6C8016-55ZIN

数据表

- 44-TSOP (0.400", 10.16mm Width) Tray Active Not Verified Volatile SRAM - Asynchronous 8Mbit 512K x 16 44-TSOP II Parallel - SRAM 55ns 55 ns Surface Mount 2.7V ~ 5.5V - -40°C ~ 85°C (TA) -
AS6C8008-55ZIN

AS6C8008-55ZIN

IC SRAM 8MBIT PARALLEL 44TSOP II

Alliance Memory, Inc.

832 -
AS6C8008-55ZIN

数据表

- 44-TSOP (0.400", 10.16mm Width) Tray Active Not Verified Volatile SRAM - Asynchronous 8Mbit 1M x 8 44-TSOP II Parallel - SRAM 55ns 55 ns Surface Mount 2.7V ~ 5.5V - -40°C ~ 85°C (TA) -
FM25V02A-DG

FM25V02A-DG

IC FRAM 256KBIT SPI 40MHZ 8DFN

Infineon Technologies

5,105 -
FM25V02A-DG

数据表

F-RAM™ 8-WDFN Exposed Pad Tube Active Not Verified Non-Volatile FRAM (Ferroelectric RAM) 256Kbit 32K x 8 8-DFN (4x4.5) SPI 40 MHz FRAM - - Surface Mount 2V ~ 3.6V - -40°C ~ 85°C (TA) -
FM25V02A-DGTR

FM25V02A-DGTR

IC FRAM 256KBIT SPI 40MHZ 8DFN

Infineon Technologies

1,929 -
FM25V02A-DGTR

数据表

F-RAM™ 8-WDFN Exposed Pad Tape & Reel (TR) Active Not Verified Non-Volatile FRAM (Ferroelectric RAM) 256Kbit 32K x 8 8-DFN (4x4.5) SPI 40 MHz FRAM - - Surface Mount 2V ~ 3.6V - -40°C ~ 85°C (TA) -
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