富聪科技订单满¥1000免运费
关注我们:

存储器

制造商 系列 封装/外壳 包装 产品状态 可编程 存储类型 技术 存储容量 存储组织 供应商设备封装 存储接口 时钟频率 存储格式 写周期时间 - 字,页 访问时间 安装类型 电压 - 电源 认证 工作温度 等级

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 存储类型 技术 存储容量 存储组织 供应商设备封装 存储接口 时钟频率 存储格式 写周期时间 - 字,页 访问时间 安装类型 电压 - 电源 认证 工作温度 等级
AT45DB641E-SHN-B

AT45DB641E-SHN-B

IC FLASH 64MBIT SPI 85MHZ 8SOIC

Renesas Electronics Corporation

3,475 -
AT45DB641E-SHN-B

数据表

- 8-SOIC (0.209", 5.30mm Width) Tube Active Verified Non-Volatile FLASH 64Mbit 264 Bytes x 32K pages 8-SOIC SPI 85 MHz FLASH 8µs, 5ms - Surface Mount 1.7V ~ 3.6V - -40°C ~ 85°C (TC) -
S29GL128P11FFI010

S29GL128P11FFI010

IC FLASH 128MBIT PARALLEL 64FBGA

Infineon Technologies

4,889 -
S29GL128P11FFI010

数据表

GL-P 64-LBGA Tray Obsolete Verified Non-Volatile FLASH - NOR 128Mbit 16M x 8 64-FBGA (13x11) Parallel - FLASH 110ns 110 ns Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
MT48LC16M16A2P-6A IT:G TR

MT48LC16M16A2P-6A IT:G TR

IC DRAM 256MBIT PAR 54TSOP II

Micron Technology Inc.

2,803 -
MT48LC16M16A2P-6A IT:G TR

数据表

- 54-TSOP (0.400", 10.16mm Width) Tape & Reel (TR) Active Not Verified Volatile SDRAM 256Mbit 16M x 16 54-TSOP II Parallel 167 MHz DRAM 12ns 5.4 ns Surface Mount 3V ~ 3.6V - -40°C ~ 85°C (TA) -
MT48LC16M16A2P-6A IT:G

MT48LC16M16A2P-6A IT:G

IC DRAM 256MBIT PAR 54TSOP II

Micron Technology Inc.

1,401 -
MT48LC16M16A2P-6A IT:G

数据表

- 54-TSOP (0.400", 10.16mm Width) Tray Active Not Verified Volatile SDRAM 256Mbit 16M x 16 54-TSOP II Parallel 167 MHz DRAM 12ns 5.4 ns Surface Mount 3V ~ 3.6V - -40°C ~ 85°C (TA) -
AT45DB641E-SHN-T

AT45DB641E-SHN-T

IC FLASH 64MBIT SPI 85MHZ 8SOIC

Renesas Electronics Corporation

7,602 -
AT45DB641E-SHN-T

数据表

- 8-SOIC (0.209", 5.30mm Width) Tape & Reel (TR) Active Verified Non-Volatile FLASH 64Mbit 264 Bytes x 32K pages 8-SOIC SPI 85 MHz FLASH 8µs, 5ms - Surface Mount 1.7V ~ 3.6V - -40°C ~ 85°C (TC) -
MT41K512M8DA-107:P

MT41K512M8DA-107:P

IC DRAM 4GBIT PAR 78FBGA

Micron Technology Inc.

2,269 -
MT41K512M8DA-107:P

数据表

- 78-TFBGA Tray Active Not Verified Volatile SDRAM - DDR3L 4Gbit 512M x 8 78-FBGA (8x10.5) Parallel 933 MHz DRAM - 20 ns Surface Mount 1.283V ~ 1.45V - 0°C ~ 95°C (TC) -
MT41K256M16TW-093:P

MT41K256M16TW-093:P

IC DRAM 4GBIT PAR 96FBGA

Micron Technology Inc.

622 -
MT41K256M16TW-093:P

数据表

- 96-TFBGA Tray Active Not Verified Volatile SDRAM - DDR3L 4Gbit 256M x 16 96-FBGA (8x14) Parallel 1.066 GHz DRAM - 20 ns Surface Mount 1.283V ~ 1.45V - 0°C ~ 95°C (TC) -
AS6C4008-55SIN

AS6C4008-55SIN

IC SRAM 4MBIT PARALLEL 32SOP

Alliance Memory, Inc.

1,346 -
AS6C4008-55SIN

数据表

- 32-SOIC (0.445", 11.30mm Width) Tray Active Not Verified Volatile SRAM - Asynchronous 4Mbit 512K x 8 32-SOP Parallel - SRAM 55ns 55 ns Surface Mount 2.7V ~ 5.5V - -40°C ~ 85°C (TA) -
MT48LC8M16A2P-6A:L TR

MT48LC8M16A2P-6A:L TR

IC DRAM 128MBIT PAR 54TSOP II

Micron Technology Inc.

4,520 -
MT48LC8M16A2P-6A:L TR

数据表

- 54-TSOP (0.400", 10.16mm Width) Tape & Reel (TR) Active Not Verified Volatile SDRAM 128Mbit 8M x 16 54-TSOP II Parallel 167 MHz DRAM 12ns 5.4 ns Surface Mount 3V ~ 3.6V - 0°C ~ 70°C (TA) -
S25FL256SAGNFI001

S25FL256SAGNFI001

IC FLASH 256MBIT SPI/QUAD 8WSON

Infineon Technologies

2,224 -
S25FL256SAGNFI001

数据表

FL-S 8-WDFN Exposed Pad Tube Active Not Verified Non-Volatile FLASH - NOR 256Mbit 32M x 8 8-WSON (6x8) SPI - Quad I/O 133 MHz FLASH - - Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
S25FL256SAGNFI000

S25FL256SAGNFI000

IC FLASH 256MBIT SPI/QUAD 8WSON

Infineon Technologies

1,828 -
S25FL256SAGNFI000

数据表

FL-S 8-WDFN Exposed Pad Tray Active Not Verified Non-Volatile FLASH - NOR 256Mbit 32M x 8 8-WSON (6x8) SPI - Quad I/O 133 MHz FLASH - - Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
MT29F4G16ABBDAH4-IT:D

MT29F4G16ABBDAH4-IT:D

IC FLASH 4GBIT PARALLEL 63VFBGA

Micron Technology Inc.

1,230 -
MT29F4G16ABBDAH4-IT:D

数据表

- 63-VFBGA Bulk Active Verified Non-Volatile FLASH - NAND 4Gbit 256M x 16 63-VFBGA (9x11) Parallel - FLASH - - Surface Mount 1.7V ~ 1.95V - -40°C ~ 85°C (TA) -
MT29F4G08ABADAWP-IT:D

MT29F4G08ABADAWP-IT:D

IC FLASH 4GBIT PARALLEL 48TSOP I

Micron Technology Inc.

910 -
MT29F4G08ABADAWP-IT:D

数据表

- 48-TFSOP (0.724", 18.40mm Width) Tray Active Not Verified Non-Volatile FLASH - NAND 4Gbit 512M x 8 48-TSOP I Parallel - FLASH - - Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
MT25QL256ABA8E12-1SIT

MT25QL256ABA8E12-1SIT

IC FLASH 256MBIT SPI 24TPBGA

Micron Technology Inc.

2,276 -
MT25QL256ABA8E12-1SIT

数据表

- 24-TBGA Tray Active Not Verified Non-Volatile FLASH - NOR 256Mbit 32M x 8 24-T-PBGA (6x8) SPI - Quad I/O 133 MHz FLASH 8ms, 2.8ms - Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
MT29F4G08ABADAH4-IT:D TR

MT29F4G08ABADAH4-IT:D TR

IC FLASH 4GBIT PARALLEL 63VFBGA

Micron Technology Inc.

1,990 -
MT29F4G08ABADAH4-IT:D TR

数据表

- 63-VFBGA Tape & Reel (TR) Active Verified Non-Volatile FLASH - NAND 4Gbit 512M x 8 63-VFBGA (9x11) Parallel - FLASH - - Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
MT29F4G08ABBDAH4-IT:D TR

MT29F4G08ABBDAH4-IT:D TR

IC FLASH 4GBIT PARALLEL 63VFBGA

Micron Technology Inc.

1,766 -
MT29F4G08ABBDAH4-IT:D TR

数据表

- 63-VFBGA Tape & Reel (TR) Active Verified Non-Volatile FLASH - NAND 4Gbit 512M x 8 63-VFBGA (9x11) Parallel - FLASH - - Surface Mount 1.7V ~ 1.95V - -40°C ~ 85°C (TA) -
MT29F4G16ABBDAH4-IT:D TR

MT29F4G16ABBDAH4-IT:D TR

IC FLASH 4GBIT PARALLEL 63VFBGA

Micron Technology Inc.

1,013 -
MT29F4G16ABBDAH4-IT:D TR

数据表

- 63-VFBGA Tape & Reel (TR) Active Not Verified Non-Volatile FLASH - NAND 4Gbit 256M x 16 63-VFBGA (9x11) Parallel - FLASH - - Surface Mount 1.7V ~ 1.95V - -40°C ~ 85°C (TA) -
AS4C8M16SA-6BAN

AS4C8M16SA-6BAN

IC DRAM 128MBIT PAR 54TFBGA

Alliance Memory, Inc.

3,781 -
AS4C8M16SA-6BAN

数据表

- 54-TFBGA Tray Active Not Verified Volatile SDRAM 128Mbit 8M x 16 54-TFBGA (8x8) Parallel 166 MHz DRAM 12ns 5 ns Surface Mount 3V ~ 3.6V AEC-Q100 -40°C ~ 105°C (TA) Automotive
S29GL256S90DHI020

S29GL256S90DHI020

IC FLASH 256MBIT PARALLEL 64FBGA

Infineon Technologies

2,952 -
S29GL256S90DHI020

数据表

GL-S 64-LBGA Tray Active Not Verified Non-Volatile FLASH - NOR 256Mbit 16M x 16 64-FBGA (9x9) Parallel - FLASH 60ns 90 ns Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
AS6C4008-55ZIN

AS6C4008-55ZIN

IC SRAM 4MBIT PARALLEL 32TSOP II

Alliance Memory, Inc.

1,081 -
AS6C4008-55ZIN

数据表

- 32-SOIC (0.400", 10.16mm Width) Tray Active Not Verified Volatile SRAM - Asynchronous 4Mbit 512K x 8 32-TSOP II Parallel - SRAM 55ns 55 ns Surface Mount 2.7V ~ 5.5V - -40°C ~ 85°C (TA) -
共 56430 条记录«上一页1... 3334353637383940...2822下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户