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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 存储类型 技术 存储容量 存储组织 供应商设备封装 存储接口 时钟频率 存储格式 写周期时间 - 字,页 访问时间 安装类型 电压 - 电源 认证 工作温度 等级
EMMC256-TY29-5B111

EMMC256-TY29-5B111

IC FLASH 2TBIT EMMC 153WFBGA

Kingston Technology

287 -
EMMC256-TY29-5B111

数据表

- 153-WFBGA Tray Active Not Verified Non-Volatile FLASH - NAND (TLC) 2Tbit 256G x 8 153-WFBGA (11.5x13) eMMC - FLASH - - Surface Mount 1.8V, 3.3V - -25°C ~ 85°C -
EMMC256-TY29-5B101

EMMC256-TY29-5B101

IC FLASH 2TBIT EMMC 153FBGA

Kingston Technology

147 -
EMMC256-TY29-5B101

数据表

- 153-BGA Tray Active Not Verified Non-Volatile FLASH - NAND (TLC) 2Tbit 256G x 8 153-FBGA (11.5x13) eMMC - FLASH - - Surface Mount - - -25°C ~ 85°C -
EMMC256-TY29-5B102

EMMC256-TY29-5B102

IC FLASH 2TBIT EMMC 153FBGA

Kingston Technology

50 -
EMMC256-TY29-5B102

数据表

e•MMC™ 153-VFBGA Tray Active - Non-Volatile FLASH - NAND (TLC) 2Tbit 256G x 8 153-FBGA (11.5x13) eMMC_5.1 200 MHz FLASH - - Surface Mount 2.7V ~ 3.6V - -25°C ~ 85°C -
MT62F2G32D4DS-026 WT:B

MT62F2G32D4DS-026 WT:B

IC DRAM 64GBIT PAR 200WFBGA

Micron Technology Inc.

900 -
MT62F2G32D4DS-026 WT:B

数据表

- 200-WFBGA Box Active Not Verified Volatile SDRAM - Mobile LPDDR5 64Gbit 2G x 32 200-WFBGA (10x14.5) Parallel 3.2 GHz DRAM - - Surface Mount 1.05V - - -
Q6422XM3BDGVK-U

Q6422XM3BDGVK-U

IC DRAM 64GBIT PAR 200FBGA

Kingston Technology

144 -
Q6422XM3BDGVK-U

数据表

LPDDR4X 200-VFBGA Tray Active - Volatile SDRAM - Mobile LPDDR4X 64Gbit 4G x 16 200-FBGA (10x14.5) Parallel 2.133 GHz DRAM 18ns 3.5 ns Surface Mount 1.06V ~ 1.17V, 1.7V ~ 1.95V - -25°C ~ 85°C (TC) -
MTFC256GBCAQTC-IT

MTFC256GBCAQTC-IT

IC FLASH 2TBIT MMC

Micron Technology Inc.

479 -
MTFC256GBCAQTC-IT

数据表

- - Tray Active - - - 2Tbit 256G x 8 - eMMC - FLASH - - - - - - -
IS21TF128G-JQLI

IS21TF128G-JQLI

IC FLASH 1TBIT EMMC 100LFBGA

ISSI, Integrated Silicon Solution Inc

94 -
IS21TF128G-JQLI

数据表

- 100-LBGA Bulk Active Not Verified Non-Volatile FLASH - NAND (TLC) 1Tbit 128G x 8 100-LFBGA (14x18) eMMC_5.1 200 MHz FLASH - - Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
MT53E1536M32D4DE-046 AIT:C

MT53E1536M32D4DE-046 AIT:C

IC DRAM 48GBIT 2.133GHZ WFBGA

Micron Technology Inc.

1,279 -
MT53E1536M32D4DE-046 AIT:C

数据表

- 200-TFBGA Tray Active Not Verified Volatile SDRAM - Mobile LPDDR4 48Gbit 1.5G x 32 200-TFBGA (10x14.5) Parallel 2.133 GHz DRAM 18ns 3.5 ns Surface Mount 1.06V ~ 1.17V AEC-Q100 -40°C ~ 95°C (TC) Automotive
MX66U51235FME-13G

MX66U51235FME-13G

IC FLASH 512MBIT SPI/QUAD 16SOP

Macronix

44 -
MX66U51235FME-13G

数据表

MXSMIO™ 16-SOIC (0.295", 7.50mm Width) Tube Active Not Verified Non-Volatile FLASH - NOR 512Mbit 64M x 8 16-SOP SPI - Quad I/O 108 MHz FLASH 30µs, 3ms - Surface Mount 1.65V ~ 2V - -40°C ~ 85°C (TA) -
THGJFLT1E45BATP

THGJFLT1E45BATP

IC FLASH 4TBIT UFS 153BGA

Kioxia America, Inc.

152 -
THGJFLT1E45BATP

数据表

e•MMC™ 153-WFBGA Tray Active - Non-Volatile FLASH - NAND (TLC) 4Tbit 512G x 8 153-WFBGA (11.5x13) UFS 4.0 2.32 GHz FLASH - - Surface Mount 2.4V ~ 2.7V - -25°C ~ 85°C -
DS1350WP-100+

DS1350WP-100+

IC NVSRAM 4MBIT PAR 34PWRCAP

Analog Devices Inc./Maxim Integrated

0 -
DS1350WP-100+

数据表

- 34-PowerCap™ Module Tray Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 4Mbit 512K x 8 34-PowerCap Module Parallel - NVSRAM 100ns 100 ns Surface Mount 3V ~ 3.6V - 0°C ~ 70°C (TA) -
EMMC256-IY29-5B101

EMMC256-IY29-5B101

IC FLASH 2TBIT EMMC 5.1 153FBGA

Kingston Technology

152 -
EMMC256-IY29-5B101

数据表

I-Temp e•MMC™ 153-BGA Tray Active Not Verified Non-Volatile FLASH - NAND (TLC) 2Tbit 256G x 8 153-FBGA (11.5x13) eMMC_5.1 - FLASH - - Surface Mount - - -40°C ~ 85°C -
DS1265AB-70IND+

DS1265AB-70IND+

IC NVSRAM 8MBIT PARALLEL 36EDIP

Analog Devices Inc./Maxim Integrated

0 -
DS1265AB-70IND+

数据表

- 36-DIP Module (0.610", 15.49mm) Tube Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 8Mbit 1M x 8 36-EDIP Parallel - NVSRAM 70ns 70 ns Through Hole 4.75V ~ 5.25V - -40°C ~ 85°C (TA) -
CY14B116N-ZSP25XI

CY14B116N-ZSP25XI

IC NVSRAM 16MBIT PAR 54TSOP II

Infineon Technologies

183 -
CY14B116N-ZSP25XI

数据表

- 54-TSOP (0.400", 10.16mm Width) Tray Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 16Mbit 1M x 16 54-TSOP II Parallel - NVSRAM 25ns 25 ns Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
DS1250Y-100IND+

DS1250Y-100IND+

IC NVSRAM 4MBIT PARALLEL 32EDIP

Analog Devices Inc./Maxim Integrated

0 -
DS1250Y-100IND+

数据表

- 32-DIP Module (0.600", 15.24mm) Tube Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 4Mbit 512K x 8 32-EDIP Parallel - NVSRAM 100ns 100 ns Through Hole 4.5V ~ 5.5V - -40°C ~ 85°C (TA) -
DS1250W-100IND+

DS1250W-100IND+

IC NVSRAM 4MBIT PARALLEL 32EDIP

Analog Devices Inc./Maxim Integrated

0 -
DS1250W-100IND+

数据表

- 32-DIP Module (0.600", 15.24mm) Tube Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 4Mbit 512K x 8 32-EDIP Parallel - NVSRAM 100ns 100 ns Through Hole 3V ~ 3.6V - -40°C ~ 85°C (TA) -
DS1250AB-70IND+

DS1250AB-70IND+

IC NVSRAM 4MBIT PARALLEL 32EDIP

Analog Devices Inc./Maxim Integrated

0 -
DS1250AB-70IND+

数据表

- 32-DIP Module (0.600", 15.24mm) Tube Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 4Mbit 512K x 8 32-EDIP Parallel - NVSRAM 70ns 70 ns Through Hole 4.75V ~ 5.25V - -40°C ~ 85°C (TA) -
DS1250YP-70IND+

DS1250YP-70IND+

IC NVSRAM 4MBIT PAR 34PWRCAP

Analog Devices Inc./Maxim Integrated

0 -
DS1250YP-70IND+

数据表

- 34-PowerCap™ Module Tube Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 4Mbit 512K x 8 34-PowerCap Module Parallel - NVSRAM 70ns 70 ns Surface Mount 4.5V ~ 5.5V - -40°C ~ 85°C (TA) -
SM662PEF BEST

SM662PEF BEST

IC FLASH 4TBIT EMMC 100BGA

Silicon Motion, Inc.

152 -
SM662PEF BEST

数据表

Ferri-eMMC® 100-LBGA Tray Active Not Verified Non-Volatile FLASH - NAND (TLC) 4Tbit 512G x 8 100-BGA (14x18) eMMC - FLASH - - Surface Mount - - -40°C ~ 85°C -
MT62F4G32D8DV-026 WT:B

MT62F4G32D8DV-026 WT:B

IC DRAM 128GBIT PAR FBGA

Micron Technology Inc.

1,046 -
MT62F4G32D8DV-026 WT:B

数据表

- - Box Active Not Verified Volatile SDRAM - Mobile LPDDR5 128Gbit 4G x 32 - Parallel 3.2 GHz DRAM - - - - - -25°C ~ 85°C -
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