富聪科技订单满¥1000免运费
关注我们:

存储器

制造商 系列 封装/外壳 包装 产品状态 可编程 存储类型 技术 存储容量 存储组织 供应商设备封装 存储接口 时钟频率 存储格式 写周期时间 - 字,页 访问时间 安装类型 电压 - 电源 认证 工作温度 等级

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 存储类型 技术 存储容量 存储组织 供应商设备封装 存储接口 时钟频率 存储格式 写周期时间 - 字,页 访问时间 安装类型 电压 - 电源 认证 工作温度 等级
CY15B104QI-20LPXC

CY15B104QI-20LPXC

IC FRAM 4MBIT SPI 20MHZ 8GQFN

Infineon Technologies

143 -
CY15B104QI-20LPXC

数据表

Excelon™-LP,F-RAM™ 8-UQFN Tray Active Not Verified Non-Volatile FRAM (Ferroelectric RAM) 4Mbit 512K x 8 8-GQFN (3.23x3.28) SPI 20 MHz FRAM - - Surface Mount 1.8V ~ 3.6V - 0°C ~ 70°C (TA) -
EM64VSUKN-BA000-2

EM64VSUKN-BA000-2

IC FLASH 512GBIT EMMC 153FBGA

Delkin Devices, Inc.

375 -
EM64VSUKN-BA000-2

数据表

- 153-VFBGA Tray Active Not Verified Non-Volatile FLASH - NAND 512Gbit 64G x 8 153-FBGA (11.5x13) eMMC 200 MHz FLASH - - Surface Mount 3.3V - -40°C ~ 85°C -
DS1220AD-150+

DS1220AD-150+

IC NVSRAM 16KBIT PARALLEL 24EDIP

Analog Devices Inc./Maxim Integrated

28 -
DS1220AD-150+

数据表

- 24-DIP Module (0.600", 15.24mm) Tube Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 16Kbit 2K x 8 24-EDIP Parallel - NVSRAM 150ns 150 ns Through Hole 4.5V ~ 5.5V - 0°C ~ 70°C (TA) -
CY62167G30-45ZXI

CY62167G30-45ZXI

IC SRAM 16MBIT PARALLEL 48TSOP I

Infineon Technologies

588 -
CY62167G30-45ZXI

数据表

MOBL™ 48-TFSOP (0.724", 18.40mm Width) Tray Active Not Verified Volatile SRAM - Asynchronous 16Mbit 2M x 8, 1M x 16 48-TSOP I Parallel - SRAM 45ns 45 ns Surface Mount 2.2V ~ 3.6V - -40°C ~ 85°C (TA) -
MT40A1G16KH-062E:E

MT40A1G16KH-062E:E

IC DRAM 16GBIT PAR 96FBGA

Alliance Memory, Inc.

919 -
MT40A1G16KH-062E:E

数据表

- 96-TFBGA Tray Active - Volatile SDRAM - DDR4 16Gbit 1G x 16 96-FBGA (9x13) Parallel 1.6 GHz DRAM 15ns 19 ns Surface Mount 1.14V ~ 1.26V - 0°C ~ 95°C (TC) -
CY14B101NA-ZS25XI

CY14B101NA-ZS25XI

IC NVSRAM 1MBIT PAR 44TSOP II

Infineon Technologies

475 -
CY14B101NA-ZS25XI

数据表

- 44-TSOP (0.400", 10.16mm Width) Tray Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 1Mbit 64K x 16 44-TSOP II Parallel - NVSRAM 25ns 25 ns Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
S70GL02GS11FHI010

S70GL02GS11FHI010

IC FLASH 2GBIT PARALLEL 64FBGA

Infineon Technologies

1,942 -
S70GL02GS11FHI010

数据表

GL-S 64-LBGA Tray Active Verified Non-Volatile FLASH - NOR 2Gbit 128M x 16 64-FBGA (13x11) Parallel - FLASH - 110 ns Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
MT29F16G08ABCCBH1-AAT:C

MT29F16G08ABCCBH1-AAT:C

IC FLASH 16GB PARALLEL 100VBGA

Micron Technology Inc.

739 -
MT29F16G08ABCCBH1-AAT:C

数据表

- 100-VBGA Bulk Active Not Verified Non-Volatile FLASH - NAND (SLC) 16Gbit 2G x 8 100-VBGA (12x18) ONFI - FLASH 20ns 20 ns Surface Mount 2.7V ~ 3.6V - -40°C ~ 105°C (TA) -
MR25H40VDF

MR25H40VDF

IC RAM 4MBIT SPI 40MHZ 8DFN

Everspin Technologies Inc.

977 -
MR25H40VDF

数据表

- 8-VDFN Exposed Pad Tray Active Not Verified Non-Volatile MRAM (Magnetoresistive RAM) 4Mbit 512K x 8 8-DFN-EP, Small Flag (5x6) SPI 40 MHz RAM - 9 ns Surface Mount 3V ~ 3.6V AEC-Q100 -40°C ~ 105°C (TA) Automotive
IS21TF16G-JCLI

IS21TF16G-JCLI

IC FLASH 128GBIT EMMC 153VFBGA

ISSI, Integrated Silicon Solution Inc

159 -
IS21TF16G-JCLI

数据表

- 153-VFBGA Tray Active Not Verified Non-Volatile FLASH - NAND (TLC) 128Gbit 16G x 8 153-VFBGA (11.5x13) eMMC_5.1 200 MHz FLASH - - Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
S70GL02GT11FHI010

S70GL02GT11FHI010

IC FLASH 2GBIT PARALLEL 64FBGA

Infineon Technologies

1,060 -
S70GL02GT11FHI010

数据表

GL-T 64-LBGA Tray Active Not Verified Non-Volatile FLASH - NOR 2Gbit 256M x 8, 128M x 16 64-FBGA (11x13) Parallel - FLASH - 110 ns Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
DS1225AB-70+

DS1225AB-70+

IC NVSRAM 64KBIT PARALLEL 28EDIP

Analog Devices Inc./Maxim Integrated

200 -
DS1225AB-70+

数据表

- 28-DIP Module (0.600", 15.24mm) Tube Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 64Kbit 8K x 8 28-EDIP Parallel - NVSRAM 70ns 70 ns Through Hole 4.75V ~ 5.25V - 0°C ~ 70°C (TA) -
DS1225AD-70+

DS1225AD-70+

IC NVSRAM 64KBIT PARALLEL 28EDIP

Analog Devices Inc./Maxim Integrated

52 -
DS1225AD-70+

数据表

- 28-DIP Module (0.600", 15.24mm) Tube Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 64Kbit 8K x 8 28-EDIP Parallel - NVSRAM 70ns 70 ns Through Hole 4.5V ~ 5.5V - 0°C ~ 70°C (TA) -
AS4C256M32MD4-062BAN

AS4C256M32MD4-062BAN

IC DRAM 8GBIT LVSTL 200FBGA

Alliance Memory, Inc.

1,507 -
AS4C256M32MD4-062BAN

数据表

- 200-TFBGA Tray Active Not Verified Volatile SDRAM - Mobile LPDDR4 8Gbit 256M x 32 200-FBGA (10x14.5) LVSTL 1.6 GHz DRAM 18ns 3.5 ns Surface Mount 1.06V ~ 1.17V, 1.7V ~ 1.95V - -40°C ~ 105°C (TC) -
CY15V104QSN-108SXI

CY15V104QSN-108SXI

IC FRAM 4MBIT SPI/QUAD 8SOIC

Infineon Technologies

190 -
CY15V104QSN-108SXI

数据表

Excelon™-Ultra, F-RAM™ 8-SOIC (0.209", 5.30mm Width) Tube Active Not Verified Non-Volatile FRAM (Ferroelectric RAM) 4Mbit 512K x 8 8-SOIC SPI - Quad I/O 108 MHz FRAM - - Surface Mount 1.71V ~ 1.89V - -40°C ~ 85°C (TA) -
DS1225AD-85+

DS1225AD-85+

IC NVSRAM 64KBIT PARALLEL 28EDIP

Analog Devices Inc./Maxim Integrated

263 -
DS1225AD-85+

数据表

- 28-DIP Module (0.600", 15.24mm) Tube Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 64Kbit 8K x 8 28-EDIP Parallel - NVSRAM 85ns 85 ns Through Hole 4.5V ~ 5.5V - 0°C ~ 70°C (TA) -
DS1225AD-150+

DS1225AD-150+

IC NVSRAM 64KBIT PARALLEL 28EDIP

Analog Devices Inc./Maxim Integrated

68 -
DS1225AD-150+

数据表

- 28-DIP Module (0.600", 15.24mm) Tube Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 64Kbit 8K x 8 28-EDIP Parallel - NVSRAM 150ns 150 ns Through Hole 4.5V ~ 5.5V - 0°C ~ 70°C (TA) -
MR2A08AYS35

MR2A08AYS35

IC RAM 4MBIT PARALLEL 44TSOP2

Everspin Technologies Inc.

126 -
MR2A08AYS35

数据表

- 44-TSOP (0.400", 10.16mm Width) Tray Active Not Verified Non-Volatile MRAM (Magnetoresistive RAM) 4Mbit 512K x 8 44-TSOP2 Parallel - RAM 35ns 35 ns Surface Mount 3V ~ 3.6V - 0°C ~ 70°C (TA) -
DS1225AD-200+

DS1225AD-200+

IC NVSRAM 64KBIT PARALLEL 28EDIP

Analog Devices Inc./Maxim Integrated

508 -
DS1225AD-200+

数据表

- 28-DIP Module (0.600", 15.24mm) Tube Active Not Verified Non-Volatile NVSRAM (Non-Volatile SRAM) 64Kbit 8K x 8 28-EDIP Parallel - NVSRAM 200ns 200 ns Through Hole 4.5V ~ 5.5V - 0°C ~ 70°C (TA) -
AS6C6416-55TIN

AS6C6416-55TIN

IC SRAM 64MBIT PARALLEL 48TSOP I

Alliance Memory, Inc.

205 -
AS6C6416-55TIN

数据表

- 48-TFSOP (0.724", 18.40mm Width) Tray Active Not Verified Volatile SRAM - Asynchronous 64Mbit 4M x 16 48-TSOP I Parallel - SRAM 55ns 55 ns Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户