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    首页 > 产品  > 分立半导体产品 > 晶体管 > 绝缘栅双极型晶体管（IGBTs） > 单个 IGBTs

    单个 IGBTs

    制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿（最大值） 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on)）（最大值）@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)（最大值） 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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    图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿（最大值） 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on)）（最大值）@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)（最大值） 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
    RGTV60TK65DGVC11

    RGTV60TK65DGVC11

    IGBT TRNCH FIELD 650V 33A TO3PFM

    Rohm Semiconductor

    		 9,285 -
    询价单
    		RGTV60TK65DGVC11

    数据表

         		- TO-3PFM, SC-93-3 Tube Active Trench Field Stop 650 V 120 A 1.9V @ 15V, 30A 76 W Through Hole 570µJ (on), 500µJ (off) Standard 33 A 64 nC 33ns/105ns - 400V, 30A, 10Ohm, 15V TO-3PFM - 95 ns -40°C ~ 175°C (TJ)
    RGW00TS65DGC11

    RGW00TS65DGC11

    IGBT TRNCH FIELD 650V 96A TO247N

    Rohm Semiconductor

    		 2,940 -
    询价单
    		RGW00TS65DGC11

    数据表

         		- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 200 A 1.9V @ 15V, 50A 254 W Through Hole 1.18mJ (on), 960µJ (off) Standard 96 A 141 nC 52ns/180ns - 400V, 50A, 10Ohm, 15V TO-247N - 95 ns -40°C ~ 175°C (TJ)
    RGS80TS65HRC11

    RGS80TS65HRC11

    IGBT TRNCH FIELD 650V 73A TO247N

    Rohm Semiconductor

    		 8,846 -
    询价单
    		RGS80TS65HRC11

    数据表

         		- TO-247-3 Tube Active Trench Field Stop 650 V 120 A 2.1V @ 15V, 40A 272 W Through Hole 1.05mJ (on), 1.03mJ (off) Standard 73 A 48 nC 37ns/112ns - 400V, 40A, 10Ohm, 15V TO-247N - - -40°C ~ 175°C (TJ)
    IXGH25N160

    IXGH25N160

    IGBT NPT 1600V 75A TO247AD

    IXYS

    		 9,409 -
    询价单
    		IXGH25N160

    数据表

         		- TO-247-3 Tube Active NPT 1600 V 200 A 4.7V @ 20V, 100A 300 W Through Hole - Standard 75 A 84 nC - - - TO-247AD - - -55°C ~ 150°C (TJ)
    AIKW75N60CTXKSA1

    AIKW75N60CTXKSA1

    IC DISCRETE 600V TO247-3

    Infineon Technologies

    		 2,509 -
    询价单
    		AIKW75N60CTXKSA1

    数据表

         		TrenchStop™ TO-247-3 Tube Active Trench Field Stop 600 V 225 A 2V @ 15V, 75A 428 W Through Hole 2mJ (on), 2.5mJ (off) Standard 80 A 470 nC 33ns/330ns AEC-Q101 400V, 75A, 5Ohm, 15V PG-TO247-3-41 Automotive - -40°C ~ 175°C (TJ)
    APT68GA60B

    APT68GA60B

    IGBT PT 600V 121A TO247

    Microchip Technology

    		 1 -
    询价单
    		APT68GA60B

    数据表

         		POWER MOS 8™ TO-247-3 Tube Active PT 600 V 202 A 2.5V @ 15V, 40A 520 W Through Hole 715µJ (on), 607µJ (off) Standard 121 A 298 nC 21ns/133ns - 400V, 40A, 4.7Ohm, 15V TO-247 [B] - - -55°C ~ 150°C (TJ)
    IGW75N60H3FKSA1

    IGW75N60H3FKSA1

    IGBT TRENCH FS 600V 140A TO247-3

    Infineon Technologies

    		 22 -
    询价单
    		IGW75N60H3FKSA1

    数据表

         		TrenchStop® TO-247-3 Tube Active Trench Field Stop 600 V 225 A 2.3V @ 15V, 75A 428 W Through Hole 3mJ (on), 1.7mJ (off) Standard 140 A 470 nC 31ns/265ns - 400V, 75A, 5.2Ohm, 15V PG-TO247-3 - - -40°C ~ 175°C (TJ)
    RGTV00TS65DGC11

    RGTV00TS65DGC11

    IGBT TRNCH FIELD 650V 95A TO247N

    Rohm Semiconductor

    		 6,320 -
    询价单
    		RGTV00TS65DGC11

    数据表

         		- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 200 A 1.9V @ 15V, 50A 276 W Through Hole 1.17mJ (on), 940µJ (off) Standard 95 A 104 nC 41ns/142ns - 400V, 50A, 10Ohm, 15V TO-247N - 102 ns -40°C ~ 175°C (TJ)
    RGS00TS65HRC11

    RGS00TS65HRC11

    IGBT TRNCH FIELD 650V 88A TO247N

    Rohm Semiconductor

    		 6,074 -
    询价单
    		RGS00TS65HRC11

    数据表

         		- TO-247-3 Tube Active Trench Field Stop 650 V 150 A 2.1V @ 15V, 50A 326 W Through Hole 1.46mJ (on), 1.29mJ (off) Standard 88 A 58 nC 36ns/115ns - 400V, 50A, 10Ohm, 15V TO-247N - - -40°C ~ 175°C (TJ)
    IXYH90N65A5

    IXYH90N65A5

    IGBT PT 650V 220A TO247

    IXYS

    		 9,410 -
    询价单
    		IXYH90N65A5

    数据表

         		XPT™, GenX5™ TO-247-3 Tube Active PT 650 V 600 A 1.35V @ 15V, 60A 650 W Through Hole 1.3mJ (on), 3.4mJ (off) Standard 220 A 260 nC 40ns/420ns - 400V, 50A, 5Ohm, 15V TO-247 (IXTH) - - -55°C ~ 175°C (TJ)
    IXYH30N170C

    IXYH30N170C

    1700V/108A HIGH VOLTAGE XPT IGB

    IXYS

    		 2,826 -
    询价单
    		IXYH30N170C

    数据表

         		XPT™ TO-247-3 Tube Active - 1700 V 255 A 3.7V @ 15V, 30A 937 W Through Hole 5.9mJ (on), 3.3mJ (off) Standard 108 A 140 nC 28ns/150ns - 850V, 30A, 10Ohm, 15V TO-247 (IXTH) - - -55°C ~ 175°C (TJ)
    IXYH24N90C3D1

    IXYH24N90C3D1

    IGBT 900V 44A 200W C3 TO-247

    IXYS

    		 1 -
    询价单
    		IXYH24N90C3D1

    数据表

         		GenX3™, XPT™ TO-247-3 Tube Active - 900 V 105 A 2.7V @ 15V, 24A 200 W Through Hole 1.35mJ (on), 400µJ (off) Standard 44 A 40 nC 20ns/73ns - 450V, 24A, 10Ohm, 15V TO-247 (IXTH) - 340 ns -55°C ~ 150°C (TJ)
    APT35GN120SG

    APT35GN120SG

    IGBT NPT FS 1200V 94A D3PAK

    Microchip Technology

    		 23 -
    询价单
    		APT35GN120SG

    数据表

         		- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active NPT, Trench Field Stop 1200 V 105 A 2.1V @ 15V, 35A 379 W Surface Mount -, 2.315mJ (off) Standard 94 A 220 nC 24ns/300ns - 800V, 35A, 2.2Ohm, 15V D3PAK - - -55°C ~ 150°C (TJ)
    APT80GA60B

    APT80GA60B

    IGBT PT 600V 143A TO247

    Microchip Technology

    		 7,903 -
    询价单
    		APT80GA60B

    数据表

         		- TO-247-3 Tube Active PT 600 V 240 A 2.5V @ 15V, 47A 625 W Through Hole 840µJ (on), 751µJ (off) Standard 143 A 230 nC 23ns/158ns - 400V, 47A, 4.7Ohm, 15V TO-247 [B] - - -55°C ~ 150°C (TJ)
    IXGH6N170

    IXGH6N170

    IGBT 1700V 12A 75W TO247

    IXYS

    		 5,038 -
    询价单
    		IXGH6N170

    数据表

         		- TO-247-3 Tube Active NPT 1700 V 24 A 4V @ 15V, 6A 75 W Through Hole 1.5mJ (off) Standard 12 A 20 nC 40ns/250ns - 1360V, 6A, 33Ohm, 15V TO-247AD - - -55°C ~ 150°C (TJ)
    IXGH40N120B2D1

    IXGH40N120B2D1

    IGBT 1200V 75A 380W TO247

    IXYS

    		 7,481 -
    询价单
    		IXGH40N120B2D1

    数据表

         		- TO-247-3 Tube Active PT 1200 V 200 A 3.5V @ 15V, 40A 380 W Through Hole 4.5mJ (on), 3mJ (off) Standard 75 A 138 nC 21ns/290ns - 960V, 40A, 2Ohm, 15V TO-247AD - 100 ns -55°C ~ 150°C (TJ)
    IXGH30N120B3D1

    IXGH30N120B3D1

    IGBT 1200V 300W TO247AD

    IXYS

    		 2 -
    询价单
    		IXGH30N120B3D1

    数据表

         		GenX3™ TO-247-3 Tube Active PT 1200 V 150 A 3.5V @ 15V, 30A 300 W Through Hole 3.47mJ (on), 2.16mJ (off) Standard - 87 nC 16ns/127ns - 960V, 30A, 5Ohm, 15V TO-247AD - 100 ns -55°C ~ 150°C (TJ)
    APT50GN120B2G

    APT50GN120B2G

    IGBT NPT FIELD STOP 1200V 134A

    Microchip Technology

    		 4,291 -
    询价单
    		APT50GN120B2G

    数据表

         		- TO-247-3 Variant Tube Active NPT, Trench Field Stop 1200 V 150 A 2.1V @ 15V, 50A 543 W Through Hole 4495µJ (off) Standard 134 A 315 nC 28ns/320ns - 800V, 50A, 2.2Ohm, 15V - - - -55°C ~ 150°C (TJ)
    IXBT16N170A

    IXBT16N170A

    IGBT 1700V 16A TO268AA

    IXYS

    		 5,011 -
    询价单
    		IXBT16N170A

    数据表

         		BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active - 1700 V 40 A 6V @ 15V, 10A 150 W Surface Mount 1.2mJ (off) Standard 16 A 65 nC 15ns/160ns - 1360V, 10A, 10Ohm, 15V TO-268AA - 360 ns -55°C ~ 150°C (TJ)
    APT64GA90B2D30

    APT64GA90B2D30

    IGBT PT 900V 117A TO247

    Microchip Technology

    		 2 -
    询价单
    		APT64GA90B2D30

    数据表

         		POWER MOS 8™ TO-247-3 Variant Tube Active PT 900 V 193 A 3.1V @ 15V, 38A 500 W Through Hole 1192µJ (on), 1088µJ (off) Standard 117 A 162 nC 18ns/131ns - 600V, 38A, 4.7Ohm, 15V - - - -55°C ~ 150°C (TJ)
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