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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
MGP7N60E

MGP7N60E

IGBT, 10A, 600V, N-CHANNEL

onsemi

6,760 -
MGP7N60E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
HGTD3N60A4S

HGTD3N60A4S

IGBT, 17A, 600V, N-CHANNEL

Fairchild Semiconductor

1,765 -
HGTD3N60A4S

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active - 600 V 40 A 2.7V @ 15V, 3A 70 W Surface Mount - Standard 17 A 32 nC 6ns/73ns - 390V, 3A, 50Ohm, 15V TO-252 (DPAK) - - -55°C ~ 150°C (TJ)
MGP19N35CL

MGP19N35CL

IGBT, 19A, 380V, N-CHANNEL

onsemi

17,050 -
MGP19N35CL

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MGP14N60E

MGP14N60E

IGBT, 18A, 600V, N-CHANNEL

onsemi

5,908 -
MGP14N60E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MGP20N14CL

MGP20N14CL

IGBT 135V 20A TO220-3

onsemi

5,075 -
MGP20N14CL

数据表

- TO-220-3 Bulk Active - 135 V 60 A - 150 W Through Hole - Logic 20 A 20 nC - - 68V, 20A, 9.1Ohm, 5V TO-220-3 - - -55°C ~ 175°C (TJ)
HGTD3N60C3

HGTD3N60C3

IGBT 600V 6A IPAK

Harris Corporation

4,718 -
HGTD3N60C3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active - 600 V 24 A 2V @ 15V, 3A 33 W Through Hole - Standard 6 A 13.8 nC - - - IPAK - 10 ns -40°C ~ 150°C (TJ)
HGTD3N60B3

HGTD3N60B3

IGBT 600V 7A IPAK

Harris Corporation

4,349 -
HGTD3N60B3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active - 600 V 20 A 2.1V @ 15V, 3.5A 33.3 W Through Hole 66µJ (on), 88µJ (off) Standard 7 A 21 nC 18ns/105ns - 480V, 3.5A, 82Ohm, 15V IPAK - 16 ns -55°C ~ 150°C (TJ)
NGB8206NSL3

NGB8206NSL3

IGBT, 20A, 390V, N-CHANNEL

onsemi

3,350 -
NGB8206NSL3

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
SGP5N60RUFTU

SGP5N60RUFTU

IGBT, 8A, 600V, N-CHANNEL

Fairchild Semiconductor

2,000 -
SGP5N60RUFTU

数据表

- TO-220-3 Bulk Active - 600 V 15 A 2.8V @ 15V, 5A 60 W Through Hole - Standard 8 A 24 nC 13ns/34ns - 300V, 5A, 40Ohm, 15V TO-220 - - -55°C ~ 150°C (TJ)
NGB8206NG

NGB8206NG

IGBT 390V 20A 150W D2PAK

onsemi

6,562 -
NGB8206NG

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete - 390 V 50 A 1.9V @ 4.5V, 20A 150 W Surface Mount - Logic 20 A - -/5µs - 300V, 9A, 1kOhm, 5V D2PAK - - -55°C ~ 175°C (TJ)
FGPF7N60RUFDTU

FGPF7N60RUFDTU

N-CHANNEL IGBT

Fairchild Semiconductor

1,323 -
FGPF7N60RUFDTU

数据表

- TO-220-3 Full Pack Tube Obsolete - 600 V 21 A 2.8V @ 15V, 7A 41 W Through Hole 230µJ (on), 100µJ (off) Standard 14 A 24 nC 60ns/60ns - 300V, 7A, 30Ohm, 15V TO-220F-3 - 65 ns -55°C ~ 150°C (TJ)
HGTP3N60C3

HGTP3N60C3

6A, 600V, N-CHANNEL IGBT

Harris Corporation

5,993 -
HGTP3N60C3

数据表

- TO-220-3 Bulk Active - 600 V 24 A 2V @ 15V, 3A 33 W Through Hole - Standard 6 A 17.3 nC - - - TO-220AB - - -40°C ~ 150°C (TJ)
FGP20N6S2

FGP20N6S2

N-CHANNEL IGBT

Fairchild Semiconductor

5,670 -
FGP20N6S2

数据表

- TO-220-3 Tube Obsolete - 600 V 40 A 2.7V @ 15V, 7A 125 W Through Hole 25µJ (on), 58µJ (off) Standard 28 A 30 nC 7.7ns/87ns - 390V, 7A, 25Ohm, 15V TO-220-3 - - -55°C ~ 150°C (TJ)
HGTD3N60B3S9A

HGTD3N60B3S9A

7A, 600V, UFS N-CHANNEL IGBT

Harris Corporation

2,500 -
HGTD3N60B3S9A

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active - 600 V 20 A 2.1V @ 15V, 3.5A 33.3 W Surface Mount 66µJ (on), 88µJ (off) Standard 7 A 21 nC 18ns/105ns - 480V, 3.5A, 82Ohm, 15V TO-252 (DPAK) - 16 ns -55°C ~ 150°C (TJ)
HGTP3N60B3

HGTP3N60B3

7A, 600V, UFS N-CHANNEL IGBT

Harris Corporation

2,000 -
HGTP3N60B3

数据表

- TO-220-3 Bulk Active - 600 V 20 A 2.1V @ 15V, 3.5A 33.3 W Through Hole 66µJ (on), 88µJ (off) Standard 7 A 21 nC 18ns/105ns - 480V, 3.5A, 82Ohm, 15V TO-220 - 16 ns -55°C ~ 150°C (TJ)
IKU06N60R

IKU06N60R

IGBT TRENCH 600V 12A TO251-3

Infineon Technologies

1,500 -
IKU06N60R

数据表

TrenchStop® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active Trench 600 V 18 A 2.1V @ 15V, 6A 100 W Through Hole 330µJ Standard 12 A 48 nC 12ns/127ns - 400V, 6A, 23Ohm, 15V PG-TO251-3 - 68 ns -
FGS15N40LTF

FGS15N40LTF

IGBT, 400V, N-CHANNEL

Fairchild Semiconductor

161,990 -
FGS15N40LTF

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete Trench 400 V 130 A 8V @ 4V, 130A 2 W Surface Mount - Standard - - - - - 8-SOIC - - -40°C ~ 150°C (TJ)
SGS13N60UFDTU

SGS13N60UFDTU

IGBT, 13A, 600V, N-CHANNEL

Fairchild Semiconductor

80,275 -
SGS13N60UFDTU

数据表

- TO-220-3 Full Pack Tube Obsolete - 600 V 52 A 2.6V @ 15V, 6.5A 45 W Through Hole 85µJ (on), 95µJ (off) Standard 13 A 25 nC 20ns/70ns - 300V, 6.5A, 50Ohm, 15V TO-220F-3 - 55 ns -55°C ~ 150°C (TJ)
FGPF7N60LSDTU

FGPF7N60LSDTU

N-CHANNEL IGBT

Fairchild Semiconductor

4,927 -
FGPF7N60LSDTU

数据表

- TO-220-3 Full Pack Tube Obsolete - 600 V 21 A 2V @ 15V, 7A 45 W Through Hole 270µJ (on), 3.8mJ (off) Standard 14 A 24 nC 120ns/410ns - 300V, 7A, 470Ohm, 15V TO-220F-3 - 65 ns -55°C ~ 150°C (TJ)
MGP7N60ED

MGP7N60ED

IGBT, 10A, 600V, N-CHANNEL

onsemi

5,116 -
MGP7N60ED

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
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