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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
FGHL75T65MQD

FGHL75T65MQD

IGBT 650V 75A TO247

onsemi

395 -
FGHL75T65MQD

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 300 A 1.8V @ 15V, 75A 375 W Through Hole 1.94mJ (on), 1.55mJ (off) Standard 80 A 145 nC 33ns/176ns - 400V, 75A, 10Ohm, 15V TO-247-3 - 36 ns -55°C ~ 175°C (TJ)
RGWSX2TS65GC13

RGWSX2TS65GC13

IGBT TRENCH FS 650V 104A TO247G

Rohm Semiconductor

600 -
RGWSX2TS65GC13

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 180 A 2V @ 15V, 60A 288 W Through Hole 1.43mJ (on), 1.2mJ (off) Standard 104 A 140 nC 55ns/180ns - 400V, 60A, 10Ohm, 15V TO-247G - - -40°C ~ 175°C (TJ)
FGH75T65SHDTL4

FGH75T65SHDTL4

IGBT FIELD STOP 650V 150A TO247

onsemi

289 -
FGH75T65SHDTL4

数据表

- TO-247-4 Tube Active Field Stop 650 V 300 A 2.1V @ 15V, 75A 455 W Through Hole 1.06mJ (on), 1.56mJ (off) Standard 150 A 126 nC 55ns/189ns - 400V, 75A, 15Ohm, 15V TO-247-4 - 76 ns -55°C ~ 175°C (TJ)
IXA12IF1200PB

IXA12IF1200PB

IGBT PT 1200V 20A TO220-3

IXYS

300 -
IXA12IF1200PB

数据表

- TO-220-3 Tube Active PT 1200 V - 2.1V @ 15V, 10A 85 W Through Hole 1.1mJ (on), 1.1mJ (off) Standard 20 A 27 nC - - 600V, 10A, 100Ohm, 15V TO-220-3 - 350 ns -40°C ~ 150°C (TJ)
RGTH80TK65DGC11

RGTH80TK65DGC11

IGBT TRNCH FIELD 650V 31A TO3PFM

Rohm Semiconductor

450 -
RGTH80TK65DGC11

数据表

- TO-3PFM, SC-93-3 Tube Active Trench Field Stop 650 V 160 A 2.1V @ 15V, 40A 66 W Through Hole - Standard 31 A 79 nC 34ns/120ns - 400V, 40A, 10Ohm, 15V TO-3PFM - 58 ns -40°C ~ 175°C (TJ)
RGWS00TS65DGC13

RGWS00TS65DGC13

IGBT TRNCH FIELD 650V 88A TO247G

Rohm Semiconductor

600 -
RGWS00TS65DGC13

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 150 A 2V @ 15V, 50A 245 W Through Hole 980µJ (on), 910µJ (off) Standard 88 A 108 nC 46ns/145ns - 400V, 50A, 10Ohm, 15V TO-247G - 88 ns -40°C ~ 175°C (TJ)
RGTV80TS65DGC11

RGTV80TS65DGC11

IGBT TRNCH FIELD 650V 78A TO247N

Rohm Semiconductor

450 -
RGTV80TS65DGC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 160 A 1.9V @ 15V, 40A 234 W Through Hole 1.02mJ (on), 710µJ (off) Standard 78 A 81 nC 39ns/113ns - 400V, 40A, 10Ohm, 15V TO-247N - 101 ns -40°C ~ 175°C (TJ)
RGWX5TS65DHRC11

RGWX5TS65DHRC11

IGBT TRENCH FLD 650V 132A TO247N

Rohm Semiconductor

332 -
RGWX5TS65DHRC11

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 300 A 1.9V @ 15V, 75A 348 W Through Hole - Standard 132 A 213 nC 62ns/237ns - 400V, 37.5A, 10Ohm, 15V TO-247N - 92 ns -40°C ~ 175°C (TJ)
FGH50T65UPD

FGH50T65UPD

IGBT TRENCH/FS 650V 100A TO247-3

onsemi

253 -
FGH50T65UPD

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 150 A 2.3V @ 15V, 50A 340 W Through Hole 2.7mJ (on), 740µJ (off) Standard 100 A 230 nC 32ns/160ns - 400V, 50A, 6Ohm, 15V TO-247-3 - 53 ns -55°C ~ 175°C (TJ)
AIKB50N65DH5ATMA1

AIKB50N65DH5ATMA1

DISCRETE SWITCHES

Infineon Technologies

3,980 -
AIKB50N65DH5ATMA1

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active NPT 650 V - - - Surface Mount - Standard 50 A - - - - PG-TO263-3-2 - - -
RGT60TS65DGC13

RGT60TS65DGC13

IGBT TRNCH FIELD 650V 55A TO247G

Rohm Semiconductor

554 -
RGT60TS65DGC13

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 90 A 2.1V @ 15V, 30A 194 W Through Hole - Standard 55 A 58 nC 29ns/100ns - 400V, 30A, 10Ohm, 15V TO-247G - 58 ns -40°C ~ 175°C (TJ)
RGW80TK65DGVC11

RGW80TK65DGVC11

IGBT TRNCH FIELD 650V 39A TO3PFM

Rohm Semiconductor

440 -
RGW80TK65DGVC11

数据表

- TO-3PFM, SC-93-3 Tube Active Trench Field Stop 650 V 160 A 1.9V @ 15V, 40A 81 W Through Hole 760µJ (on), 720µJ (off) Standard 39 A 110 nC 44ns/143ns - 400V, 40A, 10Ohm, 15V TO-3PFM - 92 ns -40°C ~ 175°C (TJ)
FGH75T65UPD

FGH75T65UPD

IGBT TRENCH FS 650V 150A TO247-3

onsemi

1,131 -
FGH75T65UPD

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 225 A 2.3V @ 15V, 75A 375 W Through Hole 2.85mJ (on), 1.2mJ (off) Standard 150 A 385 nC 32ns/166ns - 400V, 75A, 3Ohm, 15V TO-247-3 - 85 ns -55°C ~ 175°C (TJ)
RGTH00TS65DGC13

RGTH00TS65DGC13

IGBT TRNCH FIELD 650V 85A TO247G

Rohm Semiconductor

581 -
RGTH00TS65DGC13

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 200 A 2.1V @ 15V, 50A 277 W Through Hole - Standard 85 A 94 nC 39ns/143ns - 400V, 50A, 10Ohm, 15V TO-247G - 54 ns -40°C ~ 175°C (TJ)
IXGH48N60A3D1

IXGH48N60A3D1

IGBT 600V 300W TO247AD

IXYS

192 -
IXGH48N60A3D1

数据表

GenX3™ TO-247-3 Tube Active PT 600 V 300 A 1.35V @ 15V, 32A 300 W Through Hole 950µJ (on), 2.9mJ (off) Standard - 110 nC 25ns/334ns - 480V, 32A, 5Ohm, 15V TO-247AD - 25 ns -55°C ~ 150°C (TJ)
RGS80TSX2GC11

RGS80TSX2GC11

IGBT TRENCH FS 1200V 80A TO247N

Rohm Semiconductor

249 -
RGS80TSX2GC11

数据表

- TO-247-3 Tube Active Trench Field Stop 1200 V 120 A 2.1V @ 15V, 40A 555 W Through Hole 3mJ (on), 3.1mJ (off) Standard 80 A 104 nC 49ns/199ns - 600V, 40A, 10Ohm, 15V TO-247N - - -40°C ~ 175°C (TJ)
RGW60TS65DHRC11

RGW60TS65DHRC11

IGBT TRNCH FIELD 650V 64A TO247N

Rohm Semiconductor

380 -
RGW60TS65DHRC11

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 120 A 1.9V @ 15V, 30A 178 W Through Hole - Standard 64 A 84 nC 36ns/107ns - 400V, 15A, 10Ohm, 15V TO-247N - 87 ns -40°C ~ 175°C (TJ)
IXBT6N170

IXBT6N170

IGBT 1700V 12A TO268AA

IXYS

230 -
IXBT6N170

数据表

BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active - 1700 V 36 A 3.4V @ 15V, 6A 75 W Surface Mount - Standard 12 A 17 nC - - - TO-268AA - 1.08 µs -55°C ~ 150°C (TJ)
RGWSX2TS65DGC13

RGWSX2TS65DGC13

IGBT TRENCH FS 650V 104A TO247G

Rohm Semiconductor

600 -
RGWSX2TS65DGC13

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 180 A 2V @ 15V, 60A 288 W Through Hole 1.43mJ (on), 1.2mJ (off) Standard 104 A 140 nC 55ns/180ns - 400V, 60A, 10Ohm, 15V TO-247G - 88 ns -40°C ~ 175°C (TJ)
RGT80TS65DGC13

RGT80TS65DGC13

IGBT TRNCH FIELD 650V 70A TO247G

Rohm Semiconductor

600 -
RGT80TS65DGC13

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 120 A 2.1V @ 15V, 40A 234 W Through Hole - Standard 70 A 79 nC 34ns/119ns - 400V, 40A, 10Ohm, 15V TO-247G - 236 ns -40°C ~ 175°C (TJ)
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