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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
IXXH80N65B4D1

IXXH80N65B4D1

IGBT PT 650V 180A TO247AD

IXYS

6,524 -
IXXH80N65B4D1

数据表

XPT™, GenX4™ TO-247-3 Tube Obsolete PT 650 V 430 A 2.1V @ 15V, 80A 625 W Through Hole 3.36mJ (on), 1.83mJ (off) Standard 180 A 120 nC 26ns/112ns - 400V, 80A, 3Ohm, 15V TO-247AD (IXXH) - 100 ns -55°C ~ 175°C (TJ)
APT70GR65B

APT70GR65B

IGBT NPT 650V 134A TO247

Microchip Technology

14 -
APT70GR65B

数据表

- TO-247-3 Tube Active NPT 650 V 260 A 2.4V @ 15V, 70A 595 W Through Hole 1.51mJ (on), 1.46mJ (off) Standard 134 A 305 nC 19ns/170ns - 433V, 70A, 4.3Ohm, 15V TO-247 - - -55°C ~ 150°C (TJ)
IRGPC40UD2

IRGPC40UD2

IGBT W/DIODE 600V 40A TO-247AC

Infineon Technologies

4,960 -
IRGPC40UD2

数据表

- TO-247-3 Bag Obsolete - 600 V - 3V @ 15V, 20A 160 W Through Hole - Standard 40 A - - - - TO-247AC - - -55°C ~ 150°C (TJ)
IXGH30N120C3H1

IXGH30N120C3H1

IGBT 1200V 48A 250W TO247AD

IXYS

3,230 -
IXGH30N120C3H1

数据表

GenX3™ TO-247-3 Tube Active PT 1200 V 115 A 4.2V @ 15V, 24A 250 W Through Hole 1.45mJ (on), 470µJ (off) Standard 48 A 80 nC 18ns/106ns - 600V, 24A, 5Ohm, 15V TO-247AD - 70 ns -55°C ~ 150°C (TJ)
IXGH50N90B2

IXGH50N90B2

IGBT 900V 75A 400W TO247

IXYS

7,272 -
IXGH50N90B2

数据表

HiPerFAST™ TO-247-3 Tube Active PT 900 V 200 A 2.7V @ 15V, 50A 400 W Through Hole 4.7mJ (off) Standard 75 A 135 nC 20ns/350ns - 720V, 50A, 5Ohm, 15V TO-247AD - - -55°C ~ 150°C (TJ)
IXYH120N65C3

IXYH120N65C3

DISC IGBT XPT-GENX3 TO-247AD

IXYS

8,669 -
IXYH120N65C3

数据表

XPT™, GenX3™ TO-247-3 Tube Active PT 650 V 620 A 2.8V @ 15V, 100A 1360 W Through Hole 1.25mJ (on), 500µJ (off) Standard 260 A 265 nC 28ns/127ns - 400V, 50A, 2Ohm, 15V TO-247 (IXYH) - 29 ns -55°C ~ 175°C (TJ)
IXYH120N65B3

IXYH120N65B3

DISC IGBT XPT-GENX3 TO-247AD

IXYS

3,530 -
IXYH120N65B3

数据表

XPT™, GenX3™ TO-247-3 Tube Active PT 650 V 760 A 1.9V @ 15V, 100A 1360 W Through Hole 1.34mJ (on), 1.5mJ (off) Standard 340 A 250 nC 30ns/168ns - 400V, 50A, 2Ohm, 15V TO-247 (IXYH) - 28 ns -55°C ~ 175°C (TJ)
APT44GA60B

APT44GA60B

IGBT PT 600V 78A TO247

Microchip Technology

5,644 -
APT44GA60B

数据表

POWER MOS 8™ TO-247-3 Tube Last Time Buy PT 600 V 130 A 2.5V @ 15V, 26A 337 W Through Hole 409µJ (on), 258µJ (off) Standard 78 A 128 nC 16ns/84ns - 400V, 26A, 4.7Ohm, 15V TO-247 [B] - - -55°C ~ 150°C (TJ)
IXGH60N60

IXGH60N60

IGBT 600V 75A 300W TO247AD

IXYS

7,630 -
IXGH60N60

数据表

- TO-247-3 Bulk Obsolete PT 600 V 200 A 1.7V @ 15V, 60A 300 W Through Hole 8mJ (off) Standard 75 A 130 nC 50ns/300ns - 480V, 60A, 2.7Ohm, 15V TO-247AD - - -55°C ~ 150°C (TJ)
IXRP15N120

IXRP15N120

IGBT 1200V 25A 300W TO220

IXYS

3,218 -
IXRP15N120

数据表

- TO-220-3 Tube Obsolete NPT 1200 V - 2.95V @ 15V, 10A 300 W Through Hole 1.1mJ (on), 130µJ (off) Standard 25 A 36 nC - - 600V, 10A, 47Ohm, 15V TO-220-3 - 300 ns -55°C ~ 150°C (TJ)
IXGH10N100U1

IXGH10N100U1

IGBT 1000V 20A 100W TO247AD

IXYS

7,200 -
IXGH10N100U1

数据表

- TO-247-3 Tube Obsolete - 1000 V 40 A 3.5V @ 15V, 10A 100 W Through Hole 2mJ (off) Standard 20 A 52 nC 100ns/550ns - 800V, 10A, 150Ohm, 15V TO-247AD - 60 ns -55°C ~ 150°C (TJ)
IXGX72N60C3H1

IXGX72N60C3H1

IGBT 600V 75A 540W PLUS247

IXYS

8,345 -
IXGX72N60C3H1

数据表

GenX3™ TO-247-3 Variant Tube Obsolete PT 600 V 360 A 2.5V @ 15V, 50A 540 W Through Hole 1.03mJ (on), 480µJ (off) Standard 75 A 174 nC 27ns/77ns - 480V, 50A, 2Ohm, 15V PLUS247™-3 - 140 ns -55°C ~ 150°C (TJ)
APT54GA60BD30

APT54GA60BD30

IGBT PT 600V 96A TO247

Microchip Technology

2,128 -
APT54GA60BD30

数据表

- TO-247-3 Tube Active PT 600 V 161 A 2.5V @ 15V, 32A 416 W Through Hole 534µJ (on), 466µJ (off) Standard 96 A 28 nC 17ns/112ns - 400V, 32A, 4.7Ohm, 15V TO-247 [B] - - -55°C ~ 150°C (TJ)
IXGT25N160

IXGT25N160

IGBT NPT 1600V 75A TO268AA

IXYS

7,604 -
IXGT25N160

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete NPT 1600 V 200 A 4.7V @ 20V, 100A 300 W Surface Mount - Standard 75 A 84 nC - - - TO-268AA - - -55°C ~ 150°C (TJ)
IXGX72N60B3H1

IXGX72N60B3H1

IGBT 600V 75A 540W PLUS247

IXYS

5,636 -
IXGX72N60B3H1

数据表

GenX3™ TO-247-3 Variant Tube Obsolete PT 600 V 450 A 1.8V @ 15V, 60A 540 W Through Hole 1.4mJ (on), 1mJ (off) Standard 75 A 225 nC 31ns/152ns - 480V, 50A, 3Ohm, 15V PLUS247™-3 - 140 ns -55°C ~ 150°C (TJ)
IXGT32N120A3-TRL

IXGT32N120A3-TRL

IGBT PT 1200V 75A TO268HV

IXYS

3,368 -
IXGT32N120A3-TRL

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active PT 1200 V 230 A 2.35V @ 15V, 32A 300 W Surface Mount - Standard 75 A 89 nC - - - TO-268HV (IXGT) - - -55°C ~ 150°C (TJ)
IXGR72N60C3D1

IXGR72N60C3D1

IGBT 600V 75A 200W ISOPLUS247

IXYS

5,934 -
IXGR72N60C3D1

数据表

GenX3™ TO-247-3 Tube Obsolete PT 600 V 400 A 2.7V @ 15V, 50A 200 W Through Hole 1.03mJ (on), 480µJ (off) Standard 75 A 175 nC 27ns/77ns - 480V, 50A, 2Ohm, 15V ISOPLUS247™ - 35 ns -55°C ~ 150°C (TJ)
APT30GP60BG

APT30GP60BG

IGBT PT 600V 100A TO247

Microchip Technology

9,566 -
APT30GP60BG

数据表

POWER MOS 7® TO-247-3 Tube Active PT 600 V 100 A 2.7V @ 15V, 30A 463 W Through Hole 260µJ (on), 250µJ (off) Standard 100 A 90 nC 13ns/55ns - 400V, 30A, 5Ohm, 15V TO-247 [B] - - -55°C ~ 150°C (TJ)
IXGH25N100A

IXGH25N100A

IGBT 1000V 50A 200W TO247AD

IXYS

4,027 -
IXGH25N100A

数据表

- TO-247-3 Bulk Obsolete - 1000 V 100 A 4V @ 15V, 25A 200 W Through Hole 5mJ (off) Standard 50 A 130 nC 100ns/500ns - 800V, 25A, 33Ohm, 15V TO-247AD - - -55°C ~ 150°C (TJ)
APT25GR120SD15

APT25GR120SD15

IGBT NPT 1200V 75A D3PAK

Microchip Technology

5,440 -
APT25GR120SD15

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete NPT 1200 V 100 A 3.2V @ 15V, 25A 521 W Surface Mount 742µJ (on), 427µJ (off) Standard 75 A 203 nC 16ns/122ns - 600V, 25A, 4.3Ohm, 15V D3PAK - - -55°C ~ 150°C (TJ)
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