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单个场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型
CGH21240F

CGH21240F

RF MOSFET HEMT 28V 440117

MACOM Technology Solutions

54 -
CGH21240F

数据表

GaN 440117 Tray Active HEMT - 15dB 28 V - - 1 A 1.8GHz ~ 2.3GHz 240W 84 V - 440117 - Chassis Mount
CGHV96050F2

CGHV96050F2

RF MOSFET HEMT 40V 440210

MACOM Technology Solutions

30 -
CGHV96050F2

数据表

GaN 440210 Tray Active HEMT - 10dB 40 V 6A - 500 mA 7.9GHz ~ 9.6GHz 70W 100 V - 440210 - -
CGHV31500F1

CGHV31500F1

RF MOSFET HEMT 50V 440226

MACOM Technology Solutions

26 -
CGHV31500F1

数据表

- 440226 Tray Active HEMT - 15dB 50 V - - 500 mA 2.7GHz ~ 3.1GHz 500W 50 V - 440226 - -
CGHV96130F

CGHV96130F

RF MOSFET HEMT 40V 440217

MACOM Technology Solutions

50 -
CGHV96130F

数据表

GaN 440217 Tray Active HEMT - 13.8dB 40 V - - 1 A 8.4GHz ~ 9.6GHz 130W 120 V - 440217 - Chassis Mount
MMBF4416A

MMBF4416A

RF MOSFET JFET 15V SOT23-3

onsemi

33,914 -
MMBF4416A

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel - 15 V 15mA 4dB 5 mA 400MHz - 35 V - SOT-23-3 - Surface Mount
MMBFJ309LT1G

MMBFJ309LT1G

RF MOSFET JFET SOT23-3

onsemi

15,670 -
MMBFJ309LT1G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel - - 30mA - - - - 25 V - SOT-23-3 (TO-236) - Surface Mount
MMBFJ310LT3G

MMBFJ310LT3G

RF MOSFET JFET 10V SOT23-3

onsemi

14,933 -
MMBFJ310LT3G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel 12dB 10 V 60mA - 10 mA - - 25 V - SOT-23-3 (TO-236) - Surface Mount
MMBFJ310LT1G

MMBFJ310LT1G

RF MOSFET JFET 10V SOT23-3

onsemi

13,631 -
MMBFJ310LT1G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel 12dB 10 V 60mA - 10 mA - - 25 V - SOT-23-3 (TO-236) - Surface Mount
MMBFJ211

MMBFJ211

RF MOSFET JFET SOT23-3

onsemi

33,792 -
MMBFJ211

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel - - 20mA - - - - 25 V - SOT-23-3 - Surface Mount
SMMBFJ310LT3G

SMMBFJ310LT3G

RF MOSFET JFET 10V SOT23-3

onsemi

55,165 -
SMMBFJ310LT3G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel 12dB 10 V 60mA - 10 mA - - 25 V Automotive SOT-23-3 (TO-236) AEC-Q101 Surface Mount
SMMBFJ309LT1G

SMMBFJ309LT1G

RF MOSFET JFET 25V SOT23-3

onsemi

31,763 -
SMMBFJ309LT1G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active JFET N-Channel - - 30mA - - - - 25 V Automotive SOT-23-3 (TO-236) AEC-Q101 Surface Mount
3SK293(TE85L,F)

3SK293(TE85L,F)

RF MOSFET 6V USQ

Toshiba Semiconductor and Storage

33,895 -
3SK293(TE85L,F)

数据表

- SC-82A, SOT-343 Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) N-Channel Dual Gate 22dB 6 V 30mA 2.5dB 10 mA 800MHz - 12.5 V - USQ - Surface Mount
SAV-581+

SAV-581+

RF MOSFET E-PHEMT 3V MMM1362

Mini-Circuits

1,211 -
SAV-581+

数据表

- SC-82A, SOT-343 Tape & Reel (TR) Active E-pHEMT - 22.3dB 3 V - 1.5dB 30 mA 45MHz ~ 6GHz 20.5dBm 5 V - MMM1362 - Surface Mount
SAV-331+

SAV-331+

RF MOSFET D-PHEMT 4V MMM1362

Mini-Circuits

999 -
SAV-331+

数据表

- SC-82A, SOT-343 Tape & Reel (TR) Active D-pHEMT - 24.6dB 4 V - 0.9dB 60 mA 10MHz ~ 4GHz 21.1dBm 5 V - MMM1362 - Surface Mount
TAV2-14LN+

TAV2-14LN+

RF MOSFET E-PHEMT 4V

Mini-Circuits

1,134 -
TAV2-14LN+

数据表

- 6-TDFN Exposed Pad Tape & Reel (TR) Active E-pHEMT - 23.4dB 4 V 2µA 2.5dB 4 mA 50MHz ~ 10GHz 19.4dBm 5 V - - - Surface Mount
CE3512K2

CE3512K2

RF MOSFET PHEMT FET 2V 4MICROX

CEL

833 -
CE3512K2

数据表

- 4-Micro-X Strip Active pHEMT FET - 13.7dB 2 V 15mA 0.5dB 10 mA 12GHz 125mW 4 V - 4-Micro-X - -
AFT05MS006NT1

AFT05MS006NT1

RF MOSFET LDMOS 7.5V PLD-1.5W

NXP USA Inc.

1,163 -
AFT05MS006NT1

数据表

- PLD-1.5W Tape & Reel (TR) Not For New Designs LDMOS - 18.3dB 7.5 V - - 100 mA 520MHz 6W 30 V - PLD-1.5W - Surface Mount
PD55003TR-E

PD55003TR-E

RF MOSFET LDMOS 12.5V POWERSO10

STMicroelectronics

600 -
PD55003TR-E

数据表

- PowerSO-10 Exposed Bottom Pad Tape & Reel (TR) Active LDMOS - 17dB 12.5 V 2.5A - 50 mA 500MHz 3W 40 V - 10-PowerSO - -
PD55003S-E

PD55003S-E

RF MOSFET LDMOS 12.5V PWRSO-10RF

STMicroelectronics

638 -
PD55003S-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Active LDMOS - 17dB 12.5 V 2.5A - 50 mA 500MHz 3W 40 V - PowerSO-10RF (Straight Lead) - -
PD55003-E

PD55003-E

RF MOSFET LDMOS 12.5V POWERSO10

STMicroelectronics

399 -
PD55003-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Active LDMOS - 17dB 12.5 V 2.5A - 50 mA 500MHz 3W 40 V - 10-PowerSO - -
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