EPC Space, LLC|场效应晶体管（FETs）、MOSFETs - 页 2

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FBG04N30BC GAN FET HEMT 40V30A COTS 4FSMD-B EPC Space, LLC	141	-	询价单	数据表	FSMD-B	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	30A (Tc)	5V	9mOhm @ 30A, 5V	Surface Mount	2.5V @ 9mA	11.4 nC @ 5 V	40 V	+6V, -4V	1300 pF @ 20 V	-	-	4-SMD	-	-	-55°C ~ 150°C (TJ)
EPC7003AC GAN FET HEMT 100V 5A COTS 4UB EPC Space, LLC	138	-	询价单	数据表	-	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	10A (Tc)	10V	42mOhm @ 10A, 5V	Surface Mount	2.5V @ 1.4mA	1.5 nC @ 5 V	100 V	+6V, -4V	168 pF @ 50 V	-	-	4-SMD	-	-	-55°C ~ 150°C (TJ)
FBG30N04CC GAN FET HEMT 300V4A COTS 4FSMD-C EPC Space, LLC	165	-	询价单	数据表	-	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	4A (Tc)	5V	404mOhm @ 4A, 5V	Surface Mount	2.8V @ 600µA	2.6 nC @ 5 V	300 V	+6V, -4V	450 pF @ 150 V	-	-	4-SMD	-	-	-55°C ~ 150°C (TJ)
FBG20N18BSH GAN FET HEMT 200V 18A 4FSMD-B EPC Space, LLC	47	-	询价单	数据表	e-GaN®	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	18A (Tc)	5V	28mOhm @ 18A, 5V	Surface Mount	2.5V @ 3mA	7 nC @ 5 V	200 V	+6V, -4V	900 pF @ 100 V	-	-	4-SMD	-	-	-55°C ~ 150°C (TJ)
FBG10N30BSH GAN FET HEMT 100V 30A 4FSMD-B EPC Space, LLC	40	-	询价单	数据表	eGaN®	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	30A (Tc)	5V	12mOhm @ 30A, 5V	Surface Mount	2.5V @ 5mA	11 nC @ 5 V	100 V	+6V, -4V	1000 pF @ 50 V	-	-	4-SMD	-	-	-55°C ~ 150°C (TJ)
EPC7019GC GAN FET HEMT 40V 95A COTS 5UB EPC Space, LLC	25	-	询价单	数据表	eGaN®	5-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	80A (Tc)	5V	4mOhm @ 50A, 5V	Surface Mount	2.5V @ 18mA	-	40 V	+6V, -4V	2830 pF @ 20 V	-	-	5-SMD	-	-	-55°C ~ 150°C (TJ)
EPC7018GC GAN FET HEMT 100V 90A COTS 5UB EPC Space, LLC	2	-	询价单	数据表	eGaN®	5-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	80A (Tc)	5V	6mOhm @ 40A, 5V	Surface Mount	2.5V @ 12mA	11.7 nC @ 5 V	100 V	+6V, -4V	1240 pF @ 50 V	-	-	5-SMD	-	-	-55°C ~ 150°C (TJ)
EPC7018GSH GAN FET HEMT 100V 90A 5UB EPC Space, LLC	10	-	询价单	数据表	eGaN®	5-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	80A (Tc)	5V	6mOhm @ 40A, 5V	Surface Mount	2.5V @ 12mA	11.7 nC @ 5 V	100 V	+6V, -4V	1240 pF @ 50 V	-	-	5-SMD	-	-	-55°C ~ 150°C (TJ)
EPC7014UBSH GAN FET HEMT 60V 1A 4UB EPC Space, LLC	11	-	询价单	数据表	e-GaN®	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	1A (Tc)	5V	580mOhm @ 1A, 5V	Surface Mount	2.5V @ 140µA	-	60 V	-	22 pF @ 30 V	-	-	4-SMD	-	-	-55°C ~ 150°C (TJ)
FBG04N30BSH GAN FET HEMT 40V 30A 4FSMD-B EPC Space, LLC	13	-	询价单	数据表	e-GaN®	4-SMD, No Lead	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	30A (Tc)	5V	9mOhm @ 30A, 5V	Surface Mount	2.5V @ 9mA	11.4 nC @ 5 V	40 V	+6V, -4V	1300 pF @ 20 V	-	-	4-SMD	-	-	-55°C ~ 150°C (TJ)

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