Cambridge GaN Devices|场效应晶体管（FETs）、MOSFETs - 页 1

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
CGD65B240SH2 650V GAN HEMT, 240MOHM, DFN5X6. Cambridge GaN Devices	4,770	-	询价单	数据表	ICeGaN™	8-PowerVDFN	Cut Tape (CT)	Active	N-Channel	GaNFET (Gallium Nitride)	7A	12V	336mOhm @ 500mA, 12V	Surface Mount	4.2V @ 2.3mA	1.2 nC @ 12 V	650 V	+20V, -1V	-	-	-	8-DFN (5x6)	-	-	-55°C ~ 150°C (TJ)
CGD65B200S2-T13 650V GAN HEMT, 200MOHM, DFN5X6. Cambridge GaN Devices	4,174	-	询价单	数据表	ICeGaN™	8-PowerVDFN	Cut Tape (CT)	Active	-	GaNFET (Gallium Nitride)	8.5A (Tc)	9V, 20V	280mOhm @ 600mA, 12V	Surface Mount	4.2V @ 2.75mA	1.4 nC @ 12 V	650 V	+20V, -1V	-	-	Current Sensing	8-DFN (5x6)	-	-	-55°C ~ 150°C (TJ)
CGD65B130SH2 650V GAN HEMT, 130MOHM, DFN5X6. Cambridge GaN Devices	4,992	-	询价单	数据表	ICeGaN™	8-PowerVDFN	Cut Tape (CT)	Active	N-Channel	GaNFET (Gallium Nitride)	12A	12V	182mOhm @ 900mA, 12V	Surface Mount	4.2V @ 4.2mA	1.9 nC @ 12 V	650 V	+20V, -1V	-	-	-	8-DFN (5x6)	-	-	-55°C ~ 150°C (TJ)
CGD65A130SH2 650V GAN HEMT, 130MOHM, DFN8X8. Cambridge GaN Devices	3,469	-	询价单	数据表	ICeGaN™	16-PowerVDFN	Cut Tape (CT)	Active	N-Channel	GaNFET (Gallium Nitride)	12A	12V	182mOhm @ 900mA, 12V	Surface Mount	4.2V @ 4.2mA	1.9 nC @ 12 V	650 V	+20V, -1V	-	-	-	16-DFN (8x8)	-	-	-55°C ~ 150°C (TJ)
CGD65B130S2-T13 650V GAN HEMT, 130MOHM, DFN5X6. Cambridge GaN Devices	4,875	-	询价单	数据表	ICeGaN™	8-PowerVDFN	Cut Tape (CT)	Active	-	GaNFET (Gallium Nitride)	12A (Tc)	9V, 20V	182mOhm @ 900mA, 12V	Surface Mount	4.2V @ 4.2mA	2.3 nC @ 12 V	650 V	+20V, -1V	-	-	Current Sensing	8-DFN (5x6)	-	-	-55°C ~ 150°C (TJ)
CGD65A130S2-T13 650V GAN HEMT, 130MOHM, DFN8X8. Cambridge GaN Devices	3,306	-	询价单	数据表	ICeGaN™	16-PowerVDFN	Cut Tape (CT)	Active	-	GaNFET (Gallium Nitride)	12A (Tc)	12V	182mOhm @ 900mA, 12V	Surface Mount	4.2V @ 4.2mA	2.3 nC @ 12 V	650 V	+20V, -1V	-	-	Current Sensing	16-DFN (8x8)	-	-	-55°C ~ 150°C (TJ)
CGD65A055SH2 650V GAN HEMT, 55MOHM, DFN8X8. W Cambridge GaN Devices	3,239	-	询价单	数据表	ICeGaN™ H2	16-PowerVDFN	Cut Tape (CT)	Active	N-Channel	GaNFET (Gallium Nitride)	27A	12V	77mOhm @ 2.2A, 12V	Surface Mount	4.2V @ 10mA	4 nC @ 12 V	650 V	+20V, -1V	-	-	-	16-DFN (8x8)	-	-	-55°C ~ 150°C (TJ)
CGD65A055S2-T07 650V GAN HEMT, 55MOHM, DFN8X8. W Cambridge GaN Devices	674	-	询价单	数据表	ICeGaN™	16-PowerVDFN	Cut Tape (CT)	Active	-	GaNFET (Gallium Nitride)	27A (Tc)	12V	77mOhm @ 2.2A, 12V	Surface Mount	4.2V @ 10mA	6 nC @ 12 V	650 V	+20V, -1V	-	-	Current Sensing	16-DFN (8x8)	-	-	-55°C ~ 150°C (TJ)