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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STP3NK50Z

STP3NK50Z

MOSFET N-CH 500V 2.3A TO220AB

STMicroelectronics

8,923 -
STP3NK50Z

数据表

SuperMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.3A (Tc) 10V 3.3Ohm @ 1.15A, 10V Through Hole 4.5V @ 50µA 15 nC @ 10 V 500 V ±30V 280 pF @ 25 V - - TO-220 - 45W (Tc) -55°C ~ 150°C (TJ)
STI23NM60ND

STI23NM60ND

MOSFET N-CH 600V 19.5A I2PAK

STMicroelectronics

7,177 -
STI23NM60ND

数据表

FDmesh™ II TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 19.5A (Tc) 10V 180mOhm @ 10A, 10V Through Hole 5V @ 250µA 70 nC @ 10 V 600 V ±25V 2050 pF @ 50 V - - I2PAK - 150W (Tc) 150°C (TJ)
STB12NM60N

STB12NM60N

MOSFET N-CH 600V 10A D2PAK

STMicroelectronics

8,181 -
STB12NM60N

数据表

MDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 410mOhm @ 5A, 10V Surface Mount 4V @ 250µA 30.5 nC @ 10 V 600 V ±25V 960 pF @ 50 V - - D2PAK - 90W (Tc) -55°C ~ 150°C (TJ)
STL2N80K5

STL2N80K5

MOSFET N-CH 800V 2A POWERFLAT

STMicroelectronics

2,935 -
STL2N80K5

数据表

SuperMESH5™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.9Ohm @ 1A, 10V Surface Mount 5V @ 100µA 3 nC @ 10 V 800 V ±30V 95 pF @ 100 V - - PowerFlat™ (5x6) - 33W (Tc) -55°C ~ 150°C (TJ)
STL7N60M2

STL7N60M2

MOSFET N-CH 600V 5A POWERFLAT

STMicroelectronics

2,900 -
STL7N60M2

数据表

MDmesh™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.05Ohm @ 2A, 10V Surface Mount 4V @ 250µA 8.8 nC @ 10 V 600 V ±25V 271 pF @ 100 V - - PowerFLAT™ (5x5) - 4W (Ta), 67W (Tc) 150°C (TJ)
STD12N60M2

STD12N60M2

MOSFET N-CHANNEL 600V 9A DPAK

STMicroelectronics

7,451 -
STD12N60M2

数据表

MDmesh™ M2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 450mOhm @ 4.5A, 10V Surface Mount 4V @ 250µA 16 nC @ 10 V 600 V ±25V 538 pF @ 100 V - - DPAK - 85W (Tc) 150°C (TJ)
STP25NM60N

STP25NM60N

MOSFET N-CH 600V 21A TO220AB

STMicroelectronics

5,108 -
STP25NM60N

数据表

MDmesh™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 160mOhm @ 10.5A, 10V Through Hole 4V @ 250µA 84 nC @ 10 V 600 V ±25V 2400 pF @ 50 V - - TO-220 - 160W (Tc) 150°C (TJ)
STI24NM65N

STI24NM65N

MOSFET N-CH 650V 19A I2PAK

STMicroelectronics

5,717 -
STI24NM65N

数据表

MDmesh™ II TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 190mOhm @ 9.5A, 10V Through Hole 4V @ 250µA 70 nC @ 10 V 650 V ±25V 2500 pF @ 50 V - - I2PAK - 160W (Tc) -55°C ~ 150°C (TJ)
STW48N60M6

STW48N60M6

MOSFET N-CH 600V 39A TO247

STMicroelectronics

3,261 -
STW48N60M6

数据表

MDmesh™ M6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 39A (Tc) 10V 69mOhm @ 19.5A, 10V Through Hole 4.75V @ 250µA 57 nC @ 10 V 600 V ±25V 2578 pF @ 100 V - - TO-247-3 - 250W (Tc) -55°C ~ 150°C (TJ)
STB46N60M6

STB46N60M6

MOSFET N-CH 600V 36A D2PAK

STMicroelectronics

5,154 -
STB46N60M6

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 80mOhm @ 18A, 10V Surface Mount 4.75V @ 250µA 53.5 nC @ 10 V 600 V ±25V 2340 pF @ 100 V AEC-Q101 - TO-263 (D2PAK) Automotive 250W (Tc) -55°C ~ 150°C (TJ)
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