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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STL13NM60NMOSFET N-CH 600V 10A PWRFLAT HV STMicroelectronics |
2,811 | - |
|
数据表 |
MDmesh™ II | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 385mOhm @ 5A, 10V | Surface Mount | 4V @ 250µA | 30 nC @ 10 V | 600 V | ±30V | 790 pF @ 50 V | - | - | PowerFlat™ (8x8) HV | - | 3W (Ta), 90W (Tc) | 150°C (TJ) |
|
STI4N62K3MOSFET N-CH 620V 3.8A I2PAK STMicroelectronics |
4,262 | - |
|
数据表 |
SuperMESH3™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3.8A (Tc) | 10V | 2Ohm @ 1.9A, 10V | Through Hole | 4.5V @ 50µA | 22 nC @ 10 V | 620 V | ±30V | 550 pF @ 50 V | - | - | I2PAK | - | 70W (Tc) | -55°C ~ 150°C (TJ) |
|
STF10P6F6MOSFET P-CH 60V 10A TO220FP STMicroelectronics |
6,224 | - |
|
数据表 |
DeepGATE™, STripFET™ VI | TO-220-3 Full Pack | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 160mOhm @ 5A, 10V | Through Hole | 4V @ 250µA | 6.4 nC @ 10 V | 60 V | ±20V | 340 pF @ 48 V | - | - | TO-220FP | - | 20W (Tc) | 150°C (TJ) |
|
STS4DNFS30LMOSFET N-CH 30V 4A 8SO STMicroelectronics |
5,214 | - |
|
数据表 |
STripFET™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 5V, 10V | 55mOhm @ 2A, 10V | Surface Mount | 1V @ 250µA | 9 nC @ 5 V | 30 V | ±16V | 330 pF @ 25 V | - | Schottky Diode (Isolated) | 8-SOIC | - | 2W (Tc) | -55°C ~ 150°C (TJ) |
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|
STD70NH02LT4MOSFET N-CH 24V 60A DPAK STMicroelectronics |
9,803 | - |
|
数据表 |
STripFET™ II | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 5V, 10V | 8mOhm @ 30A, 10V | Surface Mount | 1.8V @ 250µA | 22 nC @ 10 V | 24 V | ±20V | 2050 pF @ 25 V | - | - | DPAK | - | 70W (Tc) | -55°C ~ 175°C (TJ) |
|
|
STP80N240K6N-CHANNEL 800 V, 197 MOHM TYP., STMicroelectronics |
973 | - |
|
数据表 |
MDmesh™ K6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 220mOhm @ 7A, 10V | Through Hole | 4V @ 100µA | 25.9 nC @ 10 V | 800 V | ±30V | 1350 pF @ 100 V | - | - | TO-220 | - | 140W (Tc) | -55°C ~ 150°C (TJ) |
|
STFU13N80K5MOSFET N-CH 800V 12A TO220FP STMicroelectronics |
899 | - |
|
数据表 |
MDmesh™ K5 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 450mOhm @ 6A, 10V | Through Hole | 5V @ 100µA | 29 nC @ 10 V | 800 V | ±30V | 870 pF @ 100 V | - | - | TO-220FP | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
|
STP25N80K5MOSFET N-CH 800V 19.5A TO220 STMicroelectronics |
1,000 | - |
|
数据表 |
SuperMESH5™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 19.5A (Tc) | 10V | 260mOhm @ 19.5A, 10V | Through Hole | 5V @ 100µA | 40 nC @ 10 V | 800 V | ±30V | 1600 pF @ 100 V | - | - | TO-220 | - | 250W (Tc) | -55°C ~ 150°C (TJ) |
|
STH150N10F7-2MOSFET N-CH 100V 110A H2PAK-2 STMicroelectronics |
760 | - |
|
数据表 |
DeepGATE™, STripFET™ VII | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 10V | 3.9mOhm @ 55A, 10V | Surface Mount | 4.5V @ 250µA | 117 nC @ 10 V | 100 V | ±20V | 8115 pF @ 50 V | - | - | H2PAK-2 | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
STL8N6LF3MOSFET N-CH 60V 20A POWERFLAT STMicroelectronics |
6,693 | - |
|
数据表 |
STripFET™ F3 | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 5V, 10V | 30mOhm @ 4A, 10V | Surface Mount | 2.5V @ 250µA | 13 nC @ 10 V | 60 V | ±20V | 668 pF @ 25 V | AEC-Q101 | - | PowerFlat™ (5x6) | Automotive | 65W (Tc) | -55°C ~ 175°C (TJ) |
