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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIHFR430ATR-GE3

SIHFR430ATR-GE3

MOSFET N-CH 500V 5A DPAK

Vishay Siliconix

9,739 -
SIHFR430ATR-GE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.7Ohm @ 3A, 10V Surface Mount 4.5V @ 250µA 24 nC @ 10 V 500 V ±30V 490 pF @ 25 V - - TO-252AA - 110W (Tc) -55°C ~ 150°C (TJ)
MSJUFR05N65-TP

MSJUFR05N65-TP

MOSFET

Micro Commercial Co

3,006 -
MSJUFR05N65-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.9Ohm @ 1A, 10V Surface Mount 4V @ 250µA 5.5 nC @ 10 V 650 V ±30V 165 pF @ 600 V - - TO-252 (DPAK) - 57W (Tj) -55°C ~ 150°C (TJ)
HUFA75617D3S

HUFA75617D3S

MOSFET N-CH 100V 16A TO252AA

onsemi

7,815 -
HUFA75617D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 90mOhm @ 16A, 10V Surface Mount 4V @ 250µA 39 nC @ 20 V 100 V ±20V 570 pF @ 25 V - - TO-252AA - 64W (Tc) -55°C ~ 175°C (TJ)
MCG20P06Y-TP

MCG20P06Y-TP

MOSFET

Micro Commercial Co

4,059 -
MCG20P06Y-TP

数据表

- 8-PowerWDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 28mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 25 nC @ 10 V 60 V ±20V 1483 pF @ 25 V - - DFN3333-8 - 39W (Tj) -55°C ~ 150°C (TJ)
MCU40P06Y-TP

MCU40P06Y-TP

MOSFET

Micro Commercial Co

2,848 -
MCU40P06Y-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40A (Tc) 6V, 10V 29mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 10 V 60 V ±20V 1491 pF @ 25 V - - TO-252 (DPAK) - 83W (Tj) -55°C ~ 150°C (TJ)
DMP3006LPSW-13

DMP3006LPSW-13

MOSFET BVDSS: 25V~30V POWERDI506

Diodes Incorporated

8,063 -
DMP3006LPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 15A (Ta), 92A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V Surface Mount, Wettable Flank 2.1V @ 250µA 106 nC @ 10 V 30 V ±20V 5639 pF @ 15 V - - PowerDI5060-8 (Type UX) - 1.6W -55°C ~ 150°C (TJ)
IPD088N06N3GATMA1

IPD088N06N3GATMA1

MOSFET N-CH 60V 50A TO252-3

Infineon Technologies

5,774 -
IPD088N06N3GATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 8.8mOhm @ 50A, 10V Surface Mount 4V @ 34µA 48 nC @ 10 V 60 V ±20V 3900 pF @ 30 V - - PG-TO252-3-311 - 71W (Tc) -55°C ~ 175°C (TJ)
IPL60R1K5C6SATMA1

IPL60R1K5C6SATMA1

MOSFET N-CH 600V 3A THIN-PAK

Infineon Technologies

2,680 -
IPL60R1K5C6SATMA1

数据表

CoolMOS™ C6 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 1.5Ohm @ 1.1A, 10V Surface Mount 3.5V @ 90µA 9.4 nC @ 10 V 600 V ±20V 200 pF @ 100 V - - 8-ThinPak (5x6) - 26.6W (Tc) -40°C ~ 150°C (TJ)
FDD6512A

FDD6512A

MOSFET N-CH 20V 10.7A/36A DPAK

onsemi

2,078 -
FDD6512A

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.7A (Ta), 36A (Tc) 2.5V, 4.5V 21mOhm @ 10.7A, 4.5V Surface Mount 1.5V @ 250µA 19 nC @ 4.5 V 20 V ±12V 1082 pF @ 10 V - - TO-252AA - 3.8W (Ta), 43W (Tc) -55°C ~ 175°C (TJ)
FDS6675A

FDS6675A

MOSFET P-CH 30V 11A 8SOIC

onsemi

8,352 -
FDS6675A

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 13mOhm @ 11A, 10V Surface Mount 3V @ 250µA 34 nC @ 5 V 30 V ±25V 2330 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 175°C (TJ)
TSM60NC1R5CH C5G

TSM60NC1R5CH C5G

600V, 3A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,526 -
TSM60NC1R5CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 1.5Ohm @ 1A, 10V Through Hole 5V @ 1mA 7.6 nC @ 10 V 600 V ±20V 242 pF @ 25 V - - TO-251 (IPAK) - 39W (Tc) -55°C ~ 150°C (TJ)
ZXMN3B04N8TC

ZXMN3B04N8TC

MOSFET N-CH 30V 7.2A 8SO

Diodes Incorporated

4,573 -
ZXMN3B04N8TC

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.2A (Ta) 2.5V, 4.5V 25mOhm @ 7.2A, 4.5V Surface Mount 700mV @ 250µA (Min) 23.1 nC @ 4.5 V 30 V ±12V 2480 pF @ 15 V - - 8-SO - 2W (Ta) -55°C ~ 150°C (TJ)
FQPF6N40CF

FQPF6N40CF

MOSFET N-CH 400V 6A TO220F

onsemi

8,289 -
FQPF6N40CF

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1Ohm @ 3A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 400 V ±30V 625 pF @ 25 V - - TO-220F-3 - 38W (Tc) -55°C ~ 150°C (TJ)
PJF2NA1K_T0_00001

PJF2NA1K_T0_00001

1000V N-CHANNEL MOSFET

Panjit International Inc.

9,727 -
PJF2NA1K_T0_00001

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 9Ohm @ 1A, 10V Through Hole 4V @ 250µA 14 nC @ 10 V 1000 V ±30V 385 pF @ 25 V - - ITO-220AB - 39W (Tc) -55°C ~ 150°C (TJ)
IRF5803D2PBF

IRF5803D2PBF

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies

5,768 -
IRF5803D2PBF

数据表

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 3.4A (Ta) 4.5V, 10V 112mOhm @ 3.4A, 10V Surface Mount 3V @ 250µA 37 nC @ 10 V 40 V ±20V 1110 pF @ 25 V - Schottky Diode (Isolated) 8-SO - 2W (Ta) -55°C ~ 150°C (TJ)
HUF75617D3

HUF75617D3

MOSFET N-CH 100V 16A IPAK

onsemi

5,658 -
HUF75617D3

数据表

UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 90mOhm @ 16A, 10V Through Hole 4V @ 250µA 39 nC @ 20 V 100 V ±20V 570 pF @ 25 V - - IPAK - 64W (Tc) -55°C ~ 175°C (TJ)
AOL1440

AOL1440

MOSFET N-CH 25V 21A/85A ULTRASO8

Alpha & Omega Semiconductor Inc.

8,987 -
AOL1440

数据表

- 3-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21A (Ta), 85A (Tc) 10V, 20V 3.2mOhm @ 20A, 20V Surface Mount 4V @ 250µA 50 nC @ 10 V 25 V ±30V 2400 pF @ 12.5 V - - UltraSO-8™ - 2.3W (Ta), 75W (Tc) -55°C ~ 175°C (TJ)
PSMN014-60LS,115

PSMN014-60LS,115

MOSFET N-CH 60V 40A 8DFN

NXP USA Inc.

9,960 -
PSMN014-60LS,115

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 14mOhm @ 10A, 10V Surface Mount 4V @ 1mA 19.6 nC @ 10 V 60 V ±20V 1264 pF @ 30 V - - 8-DFN3333 (3.3x3.3) - 65W (Tc) -55°C ~ 150°C (TJ)
IRF7807ATR

IRF7807ATR

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies

4,841 -
IRF7807ATR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V Surface Mount 1V @ 250µA 17 nC @ 5 V 30 V ±12V - - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
DMPH4016SPSW-13

DMPH4016SPSW-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

8,327 -
DMPH4016SPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 90.7A (Tc) 4.5V, 10V 10mOhm @ 9.8A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 112 nC @ 10 V 40 V ±20V 5697 pF @ 20 V - - PowerDI5060-8 (Type UX) - 4.6W (Ta), 143W (Tc) -55°C ~ 175°C (TJ)
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