富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQP19N20L

FQP19N20L

MOSFET N-CH 200V 21A TO220-3

onsemi

9,577 -
FQP19N20L

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 5V, 10V 140mOhm @ 10.5A, 10V Through Hole 2V @ 250µA 35 nC @ 5 V 200 V ±20V 2200 pF @ 25 V - - TO-220-3 - 140W (Tc) -55°C ~ 150°C (TJ)
IRFU120_R4941

IRFU120_R4941

MOSFET N-CH 100V 8.4A I-PAK

onsemi

8,335 -
IRFU120_R4941

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.4A (Tc) - 270mOhm @ 5.9A, 10V Through Hole 4V @ 250µA 15 nC @ 10 V 100 V - 350 pF @ 25 V - - IPAK - - -
FDB6690S

FDB6690S

MOSFET N-CH 30V 42A TO263AB

onsemi

6,841 -
FDB6690S

数据表

PowerTrench®, SyncFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 42A (Ta) 4.5V, 10V 15.5mOhm @ 21A, 10V Surface Mount 3V @ 1mA 15 nC @ 5 V 30 V ±20V 1238 pF @ 15 V - - TO-263 (D2PAK) - 48W (Tc) -55°C ~ 150°C (TJ)
FQAF12P20

FQAF12P20

MOSFET P-CH 200V 8.6A TO3PF

onsemi

3,534 -
FQAF12P20

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 8.6A (Tc) 10V 470mOhm @ 4.3A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 200 V ±30V 1200 pF @ 25 V - - TO-3PF - 70W (Tc) -55°C ~ 150°C (TJ)
HUF76419P3

HUF76419P3

MOSFET N-CH 60V 29A TO220-3

onsemi

3,804 -
HUF76419P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 29A (Tc) 4.5V, 10V 35mOhm @ 29A, 10V Through Hole 3V @ 250µA 28 nC @ 10 V 60 V ±16V 900 pF @ 25 V - - TO-220-3 - 75W (Tc) -55°C ~ 175°C (TJ)
NVMYS8D0N04CTWG

NVMYS8D0N04CTWG

MOSFET N-CH 40V 16A/49A 4LFPAK

onsemi

3,000 -
NVMYS8D0N04CTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta), 49A (Tc) 10V 8.1mOhm @ 15A, 10V Surface Mount 3.5V @ 30µA 10 nC @ 10 V 40 V ±20V 625 pF @ 25 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.8W (Ta), 38W (Tc) -55°C ~ 175°C (TJ)
NVMFWS027N10MCLT1G

NVMFWS027N10MCLT1G

PTNG 100V LL SO8FL

onsemi

1,265 -
NVMFWS027N10MCLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.9A (Ta), 28A (Tc) 4.5V, 10V 26mOhm @ 7A, 10V Surface Mount, Wettable Flank 3V @ 38µA 11.5 nC @ 10 V 100 V ±20V 800 pF @ 50 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.5W (Ta), 46W (Tc) -55°C ~ 175°C (TJ)
NTLJS4D9N03HTAG

NTLJS4D9N03HTAG

MOSFET N-CH 30V 9.5A 6PQFN

onsemi

7,070 -
NTLJS4D9N03HTAG

数据表

- 6-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.5A (Ta) 4.5V 6.1mOhm @ 10A, 4.5V Surface Mount 2.1V @ 250µA 6.8 nC @ 4.5 V 30 V ±12V 1020 pF @ 15 V - - 6-PQFN (2x2) - 860mW (Ta) -55°C ~ 150°C (TJ)
FDD6N20TM

FDD6N20TM

MOSFET N-CH 200V 4.5A DPAK

onsemi

8,424 -
FDD6N20TM

数据表

UniFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 800mOhm @ 2.3A, 10V Surface Mount 5V @ 250µA 6.1 nC @ 10 V 200 V ±30V 230 pF @ 25 V - - TO-252AA - 40W (Tc) -55°C ~ 150°C (TJ)
NDB603AL

NDB603AL

MOSFET N-CH 30V 25A D2PAK

onsemi

8,877 -
NDB603AL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 22mOhm @ 25A, 10V Surface Mount 3V @ 250µA 40 nC @ 10 V 30 V ±20V 1100 pF @ 15 V - - TO-263 (D2PAK) - 50W (Tc) -65°C ~ 175°C (TJ)
共 6232 条记录«上一页1... 8586878889909192...624下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户