富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQP18N20V2

FQP18N20V2

MOSFET N-CH 200V 18A TO220-3

onsemi

6,628 -
FQP18N20V2

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 140mOhm @ 9A, 10V Through Hole 5V @ 250µA 26 nC @ 10 V 200 V ±30V 1080 pF @ 25 V - - TO-220-3 - 123W (Tc) -55°C ~ 150°C (TJ)
NVMFS5C423NLAFT3G

NVMFS5C423NLAFT3G

MOSFET N-CH 40V 31A/150A 5DFN

onsemi

7,332 -
NVMFS5C423NLAFT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 31A (Ta), 150A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V Surface Mount 2V @ 250µA 50 nC @ 10 V 40 V ±20V 3100 pF @ 20 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
IRF540N_R4942

IRF540N_R4942

MOSFET N-CH 100V 33A TO220-3

onsemi

4,333 -
IRF540N_R4942

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 40mOhm @ 33A, 10V Through Hole 4V @ 250µA 79 nC @ 20 V 100 V ±20V 1220 pF @ 25 V - - TO-220-3 - 120W (Tc) -55°C ~ 175°C (TJ)
MTB23P06VT4

MTB23P06VT4

MOSFET P-CH 60V 23A D2PAK

onsemi

5,670 -
MTB23P06VT4

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 23A (Ta) 10V 120mOhm @ 11.5A, 10V Surface Mount 4V @ 250µA 50 nC @ 10 V 60 V ±15V 1620 pF @ 25 V - - D2PAK - 3W (Ta), 90W (Tc) -55°C ~ 175°C (TJ)
FQP10N60C

FQP10N60C

MOSFET N-CH 600V 9.5A TO220-3

onsemi

5,352 -
FQP10N60C

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.5A (Tc) 10V 730mOhm @ 4.75A, 10V Through Hole 4V @ 250µA 57 nC @ 10 V 600 V ±30V 2040 pF @ 25 V - - TO-220-3 - 156W (Tc) -55°C ~ 150°C (TJ)
IRFS644BYDTU_AS001

IRFS644BYDTU_AS001

MOSFET N-CH 250V 14A TO220F

onsemi

4,688 -
IRFS644BYDTU_AS001

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 280mOhm @ 7A, 10V Through Hole 4V @ 250µA 60 nC @ 10 V 250 V ±30V 1600 pF @ 25 V - - TO-220F-3 - 43W (Tc) -55°C ~ 150°C (TJ)
TLC530TU

TLC530TU

MOSFET N-CH 330V 7A TO220-3

onsemi

6,866 -
TLC530TU

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta) - - Through Hole - - 330 V - - - - TO-220-3 - - -
NTLJS053N12MCLTAG

NTLJS053N12MCLTAG

PTNG 120V LL NCH IN UDFN 2.0X2.0

onsemi

3,000 -
NTLJS053N12MCLTAG

数据表

PowerTrench® 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4.5V, 10V 53mOhm @ 5.2A, 10V Surface Mount 3V @ 30µA 7.8 nC @ 10 V 120 V ±20V 520 pF @ 60 V - - 6-UDFN (2x2) - 620mW (Ta) -55°C ~ 150°C (TJ)
NTTFS080N10GTAG

NTTFS080N10GTAG

100V MVSOA IN U8FL PACKAGE

onsemi

1,253 -
NTTFS080N10GTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.1A (Ta), 16A (Tc) 10V 72mOhm @ 4A, 10V Surface Mount 4V @ 22µA 8.6 nC @ 10 V 100 V ±20V 560.5 pF @ 50 V - - 8-WDFN (3.3x3.3) - 2.5W (Ta), 39W (Tc) -55°C ~ 175°C (TJ)
FDS7079ZN3

FDS7079ZN3

MOSFET P-CH 30V 16A 8SO

onsemi

6,070 -
FDS7079ZN3

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 7.5mOhm @ 16A, 10V Surface Mount 3V @ 250µA 55 nC @ 5 V 30 V ±25V 3630 pF @ 15 V - - 8-SO FLMP - 3.13W (Ta) -55°C ~ 150°C (TJ)
共 6232 条记录«上一页1... 8081828384858687...624下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户