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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FCU2250N80Z

FCU2250N80Z

MOSFET N-CH 800V 2.6A IPAK

onsemi

7,976 -
FCU2250N80Z

数据表

SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V Through Hole 4.5V @ 260µA 14 nC @ 10 V 800 V ±20V 585 pF @ 100 V - - IPAK - 39W (Tc) -55°C ~ 150°C (TJ)
FCU4300N80Z

FCU4300N80Z

MOSFET N-CH 800V 1.6A IPAK

onsemi

6,319 -
FCU4300N80Z

数据表

SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Tc) 10V 4.3Ohm @ 800mA, 10V Through Hole 4.5V @ 160µA 8.8 nC @ 10 V 800 V ±20V 355 pF @ 100 V - - IPAK - 27.8W (Tc) -55°C ~ 150°C (TJ)
NDDP010N25AZ-1H

NDDP010N25AZ-1H

MOSFET N-CH 250V 10A IPAK/TP

onsemi

5,668 -
NDDP010N25AZ-1H

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bag Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 420mOhm @ 5A, 10V Through Hole 4.5V @ 1mA 16 nC @ 10 V 250 V ±30V 980 pF @ 20 V - - IPAK/TP - 1W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
FQE10N20LCTU

FQE10N20LCTU

MOSFET N-CH 200V 4A TO126-3

onsemi

5,046 -
FQE10N20LCTU

数据表

QFET® TO-225AA, TO-126-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 5V, 10V 360mOhm @ 2A, 10V Through Hole 2V @ 250µA 19 nC @ 5 V 200 V ±20V 490 pF @ 25 V - - TO-126-3 - 12.8W (Tc) -55°C ~ 150°C (TJ)
FQE10N20CTU

FQE10N20CTU

MOSFET N-CH 200V 4A TO126-3

onsemi

8,445 -
FQE10N20CTU

数据表

QFET® TO-225AA, TO-126-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 360mOhm @ 2A, 10V Through Hole 4V @ 250µA 26 nC @ 10 V 200 V ±30V 510 pF @ 25 V - - TO-126-3 - 12.8W (Tc) -55°C ~ 150°C (TJ)
FDFMA2P857

FDFMA2P857

MOSFET P-CH 20V 3A 6MICROFET

onsemi

9,892 -
FDFMA2P857

数据表

PowerTrench® 6-VDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3A (Ta) 1.8V, 4.5V 120mOhm @ 3A, 4.5V Surface Mount 1.3V @ 250µA 6 nC @ 4.5 V 20 V ±8V 435 pF @ 10 V - Schottky Diode (Isolated) 6-MicroFET (2x2) - 1.4W (Ta) -55°C ~ 150°C (TJ)
FQU6N25TU

FQU6N25TU

MOSFET N-CH 250V 4.4A IPAK

onsemi

7,745 -
FQU6N25TU

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 1Ohm @ 2.2A, 10V Through Hole 5V @ 250µA 8.5 nC @ 10 V 250 V ±30V 300 pF @ 25 V - - IPAK - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
FDD9410-F085

FDD9410-F085

MOSFET N-CH 40V 50A DPAK

onsemi

7,381 -
FDD9410-F085

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 4.1mOhm @ 50A, 10V Surface Mount 4V @ 250µA 34.5 nC @ 10 V 40 V ±20V 1715 pF @ 25 V AEC-Q101 - TO-252AA Automotive 75W (Tc) -55°C ~ 175°C (TJ)
FQP3N25

FQP3N25

MOSFET N-CH 250V 2.8A TO220-3

onsemi

9,408 -
FQP3N25

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 2.2Ohm @ 1.4A, 10V Through Hole 5V @ 250µA 5.2 nC @ 10 V 250 V ±30V 170 pF @ 25 V - - TO-220-3 - 45W (Tc) -55°C ~ 150°C (TJ)
FQD2N40TM

FQD2N40TM

MOSFET N-CH 400V 1.4A DPAK

onsemi

2,179 -
FQD2N40TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Tc) 10V 5.8Ohm @ 700mA, 10V Surface Mount 5V @ 250µA 5.5 nC @ 10 V 400 V ±30V 150 pF @ 25 V - - TO-252AA - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
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