富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDMC8884-F126

FDMC8884-F126

MOSFET N-CH 30V 9A/15A 8MLP

onsemi

2,462 -
FDMC8884-F126

数据表

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta), 15A (Tc) 4.5V, 10V 19mOhm @ 9A, 10V Surface Mount 2.5V @ 250µA 14 nC @ 10 V 30 V ±20V 685 pF @ 15 V - - 8-MLP (3.3x3.3) - 2.3W (Ta), 18W (Tc) -55°C ~ 150°C (TJ)
FQB8N60CTM-WS

FQB8N60CTM-WS

MOSFET N-CH 600V 7.5A D2PAK

onsemi

5,249 -
FQB8N60CTM-WS

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.5A (Tc) 10V 1.2Ohm @ 3.75A, 10V Surface Mount 4V @ 250µA 36 nC @ 10 V 600 V ±30V 1255 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ)
FQT4N20TF

FQT4N20TF

MOSFET N-CH 200V 850MA SOT223-4

onsemi

7,631 -
FQT4N20TF

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 850mA (Tc) 10V 1.4Ohm @ 425mA, 10V Surface Mount 5V @ 250µA 6.5 nC @ 10 V 200 V ±30V 220 pF @ 25 V - - SOT-223-4 - 2.2W (Tc) -55°C ~ 150°C (TJ)
NDS331N_D87Z

NDS331N_D87Z

MOSFET N-CH 20V 1.3A SUPERSOT3

onsemi

3,817 -
NDS331N_D87Z

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.3A (Ta) 2.7V, 4.5V 160mOhm @ 1.5A, 4.5V Surface Mount 1V @ 250µA 5 nC @ 4.5 V 20 V ±8V 162 pF @ 10 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
FQD4P40TM-AM002

FQD4P40TM-AM002

MOSFET P-CH 400V 2.7A DPAK

onsemi

8,860 -
FQD4P40TM-AM002

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.7A (Tc) 10V 3.1Ohm @ 1.35A, 10V Surface Mount 5V @ 250µA 23 nC @ 10 V 400 V ±30V 680 pF @ 25 V - - TO-252AA - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
FCPF11N65

FCPF11N65

MOSFET N-CH 650V 11A TO220F

onsemi

2,554 -
FCPF11N65

数据表

SuperFET™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) - 380mOhm @ 5.5A, 10V Through Hole 5V @ 250µA 52 nC @ 10 V 650 V - 1490 pF @ 25 V - - TO-220F-3 - 36W (Tc) -
2SJ652-1E

2SJ652-1E

MOSFET P-CH 60V 28A TO220F-3SG

onsemi

8,321 -
2SJ652-1E

数据表

- TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 28A (Ta) 4V, 10V 38mOhm @ 14A, 10V Through Hole - 80 nC @ 10 V 60 V ±20V 4360 pF @ 20 V - - TO-220F-3SG - 2W (Ta), 30W (Tc) 150°C (TJ)
2SJ661-1E

2SJ661-1E

MOSFET P-CH 60V 38A TO262-3

onsemi

3,786 -
2SJ661-1E

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 38A (Ta) 4V, 10V 39mOhm @ 19A, 10V Through Hole - 80 nC @ 10 V 60 V ±20V 4360 pF @ 20 V - - TO-262-3 - 1.65W (Ta), 65W (Tc) 150°C (TJ)
2SK3703-1E

2SK3703-1E

MOSFET N-CH 60V 30A TO220F-3SG

onsemi

7,965 -
2SK3703-1E

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Ta) 4V, 10V 26mOhm @ 15A, 10V Through Hole - 40 nC @ 10 V 60 V ±20V 1780 pF @ 20 V - - TO-220F-3SG - 2W (Ta), 25W (Tc) 150°C (TJ)
2SK3707-1E

2SK3707-1E

MOSFET N-CH 100V 20A TO220F-3SG

onsemi

2,467 -
2SK3707-1E

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta) 4V, 10V 60mOhm @ 10A, 10V Through Hole - 44 nC @ 10 V 100 V ±20V 2150 pF @ 20 V - - TO-220F-3SG - 2W (Ta), 25W (Tc) 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户