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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NVMFS4C306NWFT1G

NVMFS4C306NWFT1G

POWER MOSFET 30V, 116A, 3.4 M, S

onsemi

6,102 -
NVMFS4C306NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 20.6A (Ta), 71A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V Surface Mount, Wettable Flank 2.1V @ 250µA 11.6 nC @ 4.5 V 30 V ±20V 1683 pF @ 15 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3W (Ta), 36.5W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C673NLAFT1G-YE

NVMFS5C673NLAFT1G-YE

SINGLE N-CHANNEL POWER MOSFET 60

onsemi

6,508 -
NVMFS5C673NLAFT1G-YE

数据表

- 8-PowerTDFN, 5 Leads Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 14A (Ta), 50A (Tc) 4.5V, 10V 9.2mOhm @ 25A, 10V Surface Mount 2V @ 35µA 9.5 nC @ 10 V 60 V ±20V 880 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.6W (Ta), 46W (Tc) -55°C ~ 175°C (TJ)
NTBL023N065M3S

NTBL023N065M3S

SILICON CARBIDE (SIC) MOSFET ELI

onsemi

4,232 -
NTBL023N065M3S

数据表

- 8-PowerSFN Bulk Discontinued at Digi-Key N-Channel SiC (Silicon Carbide Junction Transistor) 77A (Tc) 15V, 18V 32.6mOhm @ 20A, 18V Surface Mount 4V @ 10mA 69 nC @ 18 V 650 V +22V, -8V 1950 pF @ 400 V - - 8-HPSOF - 312W (Tc) -55°C ~ 175°C (TJ)
NVXK2KR80WDT

NVXK2KR80WDT

ELITESIC POWER MODULE FOR OBC, 8

onsemi

7,639 -
NVXK2KR80WDT

数据表

APM32 32-PowerDIP Module (1.311", 33.30mm) Bulk Discontinued at Digi-Key N-Channel SiC (Silicon Carbide Junction Transistor) 20A (Tc) 20V 116mOhm @ 20A, 20V Through Hole 4.3V @ 10mA 56 nC @ 20 V 1200 V +25V, -15V 1154 pF @ 800 V AEC-Q101 - APM32 Automotive 82W (Tc) -55°C ~ 175°C (TJ)
NVCR8LS025N65S3A

NVCR8LS025N65S3A

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

7,500 -
NVCR8LS025N65S3A

数据表

- Die Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 25mOhm @ 37.5A, 10V Surface Mount 4.5V @ 3mA 236 nC @ 10 V 650 V 30V 7330 pF @ 400 V AEC-Q101 - Die Automotive 595W (Tc) -55°C ~ 150°C (TJ)
NVMFS5C442NLAFT1G-YE

NVMFS5C442NLAFT1G-YE

SINGLE N-CHANNEL POWER MOSFET 40

onsemi

4,582 -
NVMFS5C442NLAFT1G-YE

数据表

- 8-PowerTDFN, 5 Leads Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 28A (Ta), 130A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V Surface Mount 2V @ 90µA 50 nC @ 10 V 40 V ±20V 3100 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
NVD6824NLT4G-UM

NVD6824NLT4G-UM

SINGLE N CHANNEL POWER MOSFET 10

onsemi

6,410 -
NVD6824NLT4G-UM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 8.5A (Ta), 41A (Tc) 4.5V, 10V 20mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 66 nC @ 10 V 100 V ±20V 3468 pF @ 25 V AEC-Q101 - DPAK Automotive 3.9W (Ta), 90W (Tc) -55°C ~ 175°C (TJ)
NTHL110N65S3F

NTHL110N65S3F

MOSFET N-CH 650V 30A TO247-3

onsemi

895 -
NTHL110N65S3F

数据表

- TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 110mOhm @ 15A, 10V Through Hole 5V @ 3mA 58 nC @ 10 V 650 V ±30V 2560 pF @ 400 V - - TO-247-3 - 240W (Tc) -55°C ~ 150°C (TJ)
FCH110N65F-F155

FCH110N65F-F155

MOSFET N-CH 650V 35A TO247

onsemi

761 -
FCH110N65F-F155

数据表

FRFET®, SuperFET® II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 110mOhm @ 17.5A, 10V Through Hole 5V @ 3.5mA 145 nC @ 10 V 650 V ±20V 4895 pF @ 100 V - - TO-247-3 - 357W (Tc) -55°C ~ 150°C (TJ)
FCP130N60

FCP130N60

MOSFET N-CH 600V 28A TO220-3

onsemi

515 -
FCP130N60

数据表

SuperFET® II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 130mOhm @ 14A, 10V Through Hole 3.5V @ 250µA 70 nC @ 10 V 600 V ±20V 3590 pF @ 380 V - - TO-220-3 - 278W (Tc) -55°C ~ 150°C (TJ)
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