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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQB7P20TM-F085PC

FQB7P20TM-F085PC

MOSFET

onsemi

7,219 -
FQB7P20TM-F085PC

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 690mOhm @ 3.65A, 10V Surface Mount 5V @ 250µA 25 nC @ 10 V 200 V ±30V 770 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 90W (Tc) -55°C ~ 150°C (TJ)
FQB34P10TM-F085C

FQB34P10TM-F085C

MOSFET

onsemi

6,213 -
FQB34P10TM-F085C

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 33.5A (Tc) 10V 60mOhm @ 16.75A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 100 V ±25V 2910 pF @ 25 V AEC-Q101 - TO-263 (D2PAK) Automotive 3.75W (Ta), 155W (Tc) -55°C ~ 175°C (TJ)
FDR840P

FDR840P

MOSFET P-CH 20V 10A SUPERSOT8

onsemi

5,834 -
FDR840P

数据表

- 8-LSOP (0.130", 3.30mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 10A (Ta) 2.5V, 4.5V 12mOhm @ 10A, 4.5V Surface Mount 1.5V @ 250µA 60 nC @ 4.5 V 20 V ±12V 4481 pF @ 10 V - - SuperSOT™-8 - 1.8W (Ta) -55°C ~ 150°C (TJ)
FDBL86566-F085

FDBL86566-F085

MOSFET N-CH 60V 240A 8HPSOF

onsemi

5,883 -
FDBL86566-F085

数据表

PowerTrench® 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 10V 2.4mOhm @ 80A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 60 V ±20V 6655 pF @ 30 V AEC-Q101 - 8-HPSOF Automotive 300W (Tj) -55°C ~ 175°C (TJ)
NTP6410ANG

NTP6410ANG

MOSFET N-CH 100V 76A TO220AB

onsemi

137 -
NTP6410ANG

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 76A (Tc) 10V 13mOhm @ 76A, 10V Through Hole 4V @ 250µA 120 nC @ 10 V 100 V ±20V 4500 pF @ 25 V - - TO-220 - 188W (Tc) -55°C ~ 175°C (TJ)
FCPF650N80Z

FCPF650N80Z

MOSFET N-CH 800V 8A TO220F

onsemi

986 -
FCPF650N80Z

数据表

SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 650mOhm @ 4A, 10V Through Hole 4.5V @ 800µA 35 nC @ 10 V 800 V ±20V 1565 pF @ 100 V - - TO-220F-3 - 30.5W (Tc) -55°C ~ 150°C (TJ)
FDR844P

FDR844P

MOSFET P-CH 20V 10A SUPERSOT8

onsemi

8,564 -
FDR844P

数据表

- 8-LSOP (0.130", 3.30mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 10A (Ta) 1.8V, 4.5V 11mOhm @ 10A, 4.5V Surface Mount 1.5V @ 250µA 74 nC @ 4.5 V 20 V ±8V 4951 pF @ 10 V - - SuperSOT™-8 - 1.8W (Ta) -55°C ~ 150°C (TJ)
FQB3P50TM

FQB3P50TM

MOSFET P-CH 500V 2.7A D2PAK

onsemi

4,528 -
FQB3P50TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.7A (Tc) 10V 4.9Ohm @ 1.35A, 10V Surface Mount 5V @ 250µA 23 nC @ 10 V 500 V ±30V 660 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 85W (Tc) -55°C ~ 150°C (TJ)
NVTFS5811NLTWG

NVTFS5811NLTWG

MOSFET N-CH 40V 16A 8WDFN

onsemi

6,782 -
NVTFS5811NLTWG

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 6.7mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 30 nC @ 10 V 40 V ±20V 1570 pF @ 25 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.2W (Ta), 21W (Tc) -55°C ~ 175°C (TJ)
FQU5N50CTU-WS

FQU5N50CTU-WS

MOSFET N-CH 500V 4A IPAK

onsemi

7,580 -
FQU5N50CTU-WS

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.4Ohm @ 2A, 10V Through Hole 4V @ 250µA 24 nC @ 10 V 500 V ±30V 625 pF @ 25 V - - IPAK - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ)
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