| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTH4L095N065SC1SIC MOS TO247-4L 650V onsemi |
420 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 31A (Tc) | 15V, 18V | 105mOhm @ 12A, 18V | Through Hole | 4.3V @ 4mA | 50 nC @ 10 V | 650 V | +22V, -8V | 956 pF @ 325 V | - | - | TO-247-4 | - | 129W (Tc) | -55°C ~ 175°C (TJ) |
|
NTH4L070N120M3SSILICON CARBIDE (SIC) MOSFET EL onsemi |
175 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 34A (Tc) | 18V | 87mOhm @ 15A, 18V | Through Hole | 4.4V @ 7mA | 57 nC @ 18 V | 1200 V | +22V, -10V | 1230 pF @ 800 V | - | - | TO-247-4L | - | 160W (Tc) | -55°C ~ 175°C (TJ) |
|
NTMFS5C604NLT3GMOSFET N-CH 60V 40A/287A 5DFN onsemi |
4,853 | - |
|
数据表 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40A (Ta), 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | Surface Mount | 2V @ 250µA | 120 nC @ 10 V | 60 V | ±20V | 8900 pF @ 25 V | - | - | 5-DFN (5x6) (8-SOFL) | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) |
|
NVMTS1D1N04CTXGT6 40V SL AIZU SINGLE NCH PQFN 8 onsemi |
2,909 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 48.8A (Ta), 277A (Tc) | 10V | 1.1mOhm @ 50A, 10V | Surface Mount | 4V @ 210µA | 86 nC @ 10 V | 40 V | ±20V | 5410 pF @ 25 V | AEC-Q101 | - | 8-DFNW (8.3x8.4) | Automotive | 4.7W (Ta), 153W (Tc) | -55°C ~ 175°C (TJ) |
|
NTBLS1D5N10MCTXGMOSFET - POWER, SINGLE, N-CHANNE onsemi |
1,415 | - |
|
数据表 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 32A (Ta), 312A (Tc) | 10V | 1.5mOhm @ 80A, 10V | Surface Mount | 4V @ 799µA | 131 nC @ 10 V | 100 V | ±20V | 10100 pF @ 50 V | - | - | 8-HPSOF | - | 3.4W (Ta), 322W (Tc) | -55°C ~ 175°C (TJ) |
|
FDD20AN06A0-F085MOSFET N-CH 60V 8A/45A TO252AA onsemi |
5,602 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8A (Ta), 45A (Tc) | 10V | 20mOhm @ 45A, 10V | Surface Mount | 4V @ 250µA | 19 nC @ 10 V | 60 V | ±20V | 950 pF @ 25 V | AEC-Q101 | - | TO-252AA | Automotive | 90W (Tc) | -55°C ~ 175°C (TJ) |
|
NTDV20P06LT4GMOSFET P-CH 60V 15.5A DPAK onsemi |
2,319 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 15.5A (Ta) | 10V | 150mOhm @ 7.5A, 5V | Surface Mount | 2V @ 250µA | 26 nC @ 5 V | 60 V | ±20V | 1190 pF @ 25 V | - | - | DPAK | - | 65W (Tc) | -55°C ~ 175°C (TJ) |
|
FDD9411L-F085MOSFET N-CH 40V 25A TO252 onsemi |
8,018 | - |
|
数据表 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 27 nC @ 10 V | 40 V | ±20V | 1210 pF @ 20 V | AEC-Q101 | - | TO-252AA | Automotive | 48.4W (Tj) | -55°C ~ 175°C (TJ) |
|
FQP65N06MOSFET N-CH 60V 65A TO220-3 onsemi |
6,466 | - |
|
数据表 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 10V | 16mOhm @ 32.5A, 10V | Through Hole | 4V @ 250µA | 65 nC @ 10 V | 60 V | ±25V | 2410 pF @ 25 V | - | - | TO-220-3 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
NTBL060N065SC1M2 650V SIC MOSFET 60MOHM WITH T onsemi |
1,998 | - |
|
数据表 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 46A (Tc) | 15V, 18V | 70mOhm @ 20A, 18V | Surface Mount | 4.3V @ 6.5mA | 74 nC @ 18 V | 650 V | +22V, -8V | 1473 pF @ 325 V | - | - | 8-HPSOF | - | 170W (Tc) | -55°C ~ 175°C (TJ) |