富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQI4N80TU

FQI4N80TU

MOSFET N-CH 800V 3.9A I2PAK

onsemi

7,640 -
FQI4N80TU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.9A (Tc) 10V 3.6Ohm @ 1.95A, 10V Through Hole 5V @ 250µA 25 nC @ 10 V 800 V ±30V 880 pF @ 25 V - - TO-262 (I2PAK) - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ)
HUFA75337S3S

HUFA75337S3S

MOSFET N-CH 55V 75A D2PAK

onsemi

5,275 -
HUFA75337S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 14mOhm @ 75A, 10V Surface Mount 4V @ 250µA 109 nC @ 20 V 55 V ±20V 1775 pF @ 25 V - - TO-263 (D2PAK) - 175W (Tc) -55°C ~ 175°C (TJ)
HUFA75637S3S

HUFA75637S3S

MOSFET N-CH 100V 44A D2PAK

onsemi

3,058 -
HUFA75637S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 30mOhm @ 44A, 10V Surface Mount 4V @ 250µA 108 nC @ 20 V 100 V ±20V 1700 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
HUFA76437S3S

HUFA76437S3S

MOSFET N-CH 60V 71A D2PAK

onsemi

5,465 -
HUFA76437S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V Surface Mount 3V @ 250µA 71 nC @ 10 V 60 V ±16V 2230 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
FQP12N60

FQP12N60

MOSFET N-CH 600V 10.5A TO220-3

onsemi

6,361 -
FQP12N60

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V Through Hole 5V @ 250µA 54 nC @ 10 V 600 V ±30V 1900 pF @ 25 V - - TO-220-3 - 180W (Tc) -55°C ~ 150°C (TJ)
FQB12N50TM_AM002

FQB12N50TM_AM002

MOSFET N-CH 500V 12.1A D2PAK

onsemi

5,353 -
FQB12N50TM_AM002

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12.1A (Tc) 10V 490mOhm @ 6.05A, 10V Surface Mount 5V @ 250µA 51 nC @ 10 V 500 V ±30V 2020 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 179W (Tc) -55°C ~ 150°C (TJ)
HUF75939P3

HUF75939P3

MOSFET N-CH 200V 22A TO220-3

onsemi

8,737 -
HUF75939P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 125mOhm @ 22A, 10V Through Hole 4V @ 250µA 152 nC @ 20 V 200 V ±20V 2200 pF @ 25 V - - TO-220-3 - 180W (Tc) -55°C ~ 175°C (TJ)
FQN1N50CTA

FQN1N50CTA

MOSFET N-CH 500V 380MA TO92-3

onsemi

19 -
FQN1N50CTA

数据表

QFET® TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 380mA (Tc) 10V 6Ohm @ 190mA, 10V Through Hole 4V @ 250µA 6.4 nC @ 10 V 500 V ±30V 195 pF @ 25 V - - TO-92-3 - 890mW (Ta), 2.08W (Tc) -55°C ~ 150°C (TJ)
FDD6680AS

FDD6680AS

MOSFET N-CH 30V 55A TO252

onsemi

2,479 -
FDD6680AS

数据表

PowerTrench®, SyncFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55A (Ta) 4.5V, 10V 10.5mOhm @ 12.5A, 10V Surface Mount 3V @ 1mA 29 nC @ 10 V 30 V ±20V 1200 pF @ 15 V - - TO-252AA - 60W (Ta) -55°C ~ 155°C (TJ)
RFD10P03LSM

RFD10P03LSM

MOSFET P-CH 30V 10A TO252-3

onsemi

4,185 -
RFD10P03LSM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete P-Channel MOSFET (Metal Oxide) 10A (Tc) - 200mOhm @ 10A, 5V Surface Mount 2V @ 250µA 30 nC @ 10 V 30 V - 1035 pF @ 25 V - - TO-252AA - - -
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户