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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDP047N08-F102

FDP047N08-F102

MOSFET N-CH 75V 164A TO220-3

onsemi

3,179 -
FDP047N08-F102

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 164A (Tc) 10V 4.7mOhm @ 80A, 10V Through Hole 4.5V @ 250µA 152 nC @ 10 V 75 V ±20V 9415 pF @ 25 V - - TO-220-3 - 268W (Tc) -55°C ~ 175°C (TJ)
NTMJST2D6N08HTXG

NTMJST2D6N08HTXG

TRENCH 8 80V LFPAK 5X7

onsemi

2,900 -
NTMJST2D6N08HTXG

数据表

- 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Ta), 131.5A (Tc) 10V 2.8mOhm @ 50A, 10V Surface Mount 4V @ 250µA 68 nC @ 10 V 80 V ±20V 4405 pF @ 40 V - - 10-TCPAK - 5.3W (Ta), 116W (Tc) -55°C ~ 175°C (TJ)
NVMFWS3D0P04M8LT1G

NVMFWS3D0P04M8LT1G

MV8 P INITIAL PROGRAM

onsemi

1,435 -
NVMFWS3D0P04M8LT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 28A (Ta), 183A (Tc) 4.5V, 10V 2.7mOhm @ 30A,10V Surface Mount 2.4V @ 2mA 124 nC @ 10 V 40 V ±20V 5827 pF @ 20 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.9W (Ta), 171W (Tc) -55°C ~ 175°C (TJ)
FDI150N10

FDI150N10

MOSFET N-CH 100V 57A I2PAK

onsemi

3,026 -
FDI150N10

数据表

PowerTrench® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 57A (Tc) 10V 16mOhm @ 49A, 10V Through Hole 4.5V @ 250µA 69 nC @ 10 V 100 V ±20V 4760 pF @ 25 V - - TO-262 (I2PAK) - 110W (Tc) -55°C ~ 150°C (TJ)
HUF76439P3

HUF76439P3

MOSFET N-CH 60V 75A TO220-3

onsemi

4,283 -
HUF76439P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V Through Hole 3V @ 250µA 84 nC @ 10 V 60 V ±16V 2745 pF @ 25 V - - TO-220-3 - 180W (Tc) -55°C ~ 175°C (TJ)
FQP13N50C

FQP13N50C

MOSFET N-CH 500V 13A TO220-3

onsemi

7,707 -
FQP13N50C

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 480mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 56 nC @ 10 V 500 V ±30V 2055 pF @ 25 V - - TO-220-3 - 195W (Tc) -55°C ~ 150°C (TJ)
FDS6680AS

FDS6680AS

MOSFET N-CH 30V 11.5A 8SOIC

onsemi

3,470 -
FDS6680AS

数据表

PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11.5A (Ta) 4.5V, 10V 10mOhm @ 11.5A, 10V Surface Mount 3V @ 1mA 30 nC @ 10 V 30 V ±20V 1240 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDS6670AS

FDS6670AS

MOSFET N-CH 30V 13.5A 8SOIC

onsemi

3,216 -
FDS6670AS

数据表

PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13.5A (Ta) 4.5V, 10V 9mOhm @ 13.5A, 10V Surface Mount 3V @ 1mA 38 nC @ 10 V 30 V ±20V 1540 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDD6296

FDD6296

MOSFET N-CH 30V 15A/50A DPAK

onsemi

3,668 -
FDD6296

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Ta), 50A (Tc) 4.5V, 10V 8.8mOhm @ 15A, 10V Surface Mount 3V @ 250µA 31.5 nC @ 10 V 30 V ±20V 1440 pF @ 15 V - - TO-252AA - 3.8W (Ta), 52W (Tc) -55°C ~ 175°C (TJ)
FQD12N20TM

FQD12N20TM

MOSFET N-CH 200V 9A DPAK

onsemi

6,695 -
FQD12N20TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 280mOhm @ 4.5A, 10V Surface Mount 5V @ 250µA 23 nC @ 10 V 200 V ±30V 910 pF @ 25 V - - TO-252AA - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
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