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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NVMFS6H801NLWFT1G

NVMFS6H801NLWFT1G

MOSFET N-CH 80V 24A/160A 5DFN

onsemi

1,400 -
NVMFS6H801NLWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Ta), 160A (Tc) 4.5V, 10V 2.7mOhm @ 50A, 10V Surface Mount, Wettable Flank 2V @ 250µA 90 nC @ 10 V 80 V ±20V 5126 pF @ 40 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
NTMFS0D5N04XMT1G

NTMFS0D5N04XMT1G

40V T10M IN S08FL HEFET GEN 2 PA

onsemi

1,255 -
NTMFS0D5N04XMT1G

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 414A (Tc) 10V 0.52mOhm @ 50A, 10V Surface Mount 3.5V @ 240µA 97.5 nC @ 10 V 40 V ±20V 6267 pF @ 20 V - - 8-DFN (5x6) - 163W (Tc) -55°C ~ 175°C (TJ)
NTMFS4C810NAT3G

NTMFS4C810NAT3G

TRENCH 6 30V NCH

onsemi

6,315 -
NTMFS4C810NAT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.2A (Ta), 46A (Tc) 4.5V, 10V 5.88mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 18.6 nC @ 10 V 30 V ±20V 987 pF @ 15 V - - 5-DFN (5x6) (8-SOFL) - 750mW (Ta), 23.6W (Tc) -55°C ~ 150°C (TJ)
NTTFS6H888NTAG

NTTFS6H888NTAG

T8 80V U8FL

onsemi

9,556 -
NTTFS6H888NTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.7A (Ta), 12A (Tc) 6V, 10V 55mOhm @ 5A, 10V Surface Mount 4V @ 15µA 4.7 nC @ 10 V 80 V ±20V 220 pF @ 40 V - - 8-WDFN (3.3x3.3) - 2.9W (Ta), 18W (Tc) -55°C ~ 175°C (TJ)
HUF76437S3S

HUF76437S3S

MOSFET N-CH 60V 71A D2PAK

onsemi

6,642 -
HUF76437S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V Surface Mount 3V @ 250µA 71 nC @ 10 V 60 V ±16V 2230 pF @ 25 V - - TO-263 (D2PAK) - 155W (Tc) -55°C ~ 175°C (TJ)
FDP80N06

FDP80N06

MOSFET N-CH 60V 80A TO220-3

onsemi

6,324 -
FDP80N06

数据表

UniFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 10mOhm @ 40A, 10V Through Hole 4V @ 250µA 74 nC @ 10 V 60 V ±20V 3190 pF @ 25 V - - TO-220-3 - 176W (Tc) -55°C ~ 175°C (TJ)
NTP13N10

NTP13N10

MOSFET N-CH 100V 13A TO220AB

onsemi

9,739 -
NTP13N10

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta) 10V 165mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 100 V ±20V 550 pF @ 25 V - - TO-220 - 64.7W (Tc) -55°C ~ 175°C (TJ)
NTP13N10G

NTP13N10G

MOSFET N-CH 100V 13A TO220AB

onsemi

6,796 -
NTP13N10G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta) 10V 165mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 100 V ±20V 550 pF @ 25 V - - TO-220 - 64.7W (Tc) -55°C ~ 175°C (TJ)
FQP4N80

FQP4N80

MOSFET N-CH 800V 3.9A TO220-3

onsemi

2,766 -
FQP4N80

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.9A (Tc) 10V 3.6Ohm @ 1.95A, 10V Through Hole 5V @ 250µA 25 nC @ 10 V 800 V ±30V 880 pF @ 25 V - - TO-220-3 - 130W (Tc) -55°C ~ 150°C (TJ)
HUFA75637P3

HUFA75637P3

MOSFET N-CH 100V 44A TO220-3

onsemi

7,442 -
HUFA75637P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 30mOhm @ 44A, 10V Through Hole 4V @ 250µA 108 nC @ 20 V 100 V ±20V 1700 pF @ 25 V - - TO-220-3 - 155W (Tc) -55°C ~ 175°C (TJ)
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